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SINGLE WITH BUILT-IN DIODE Insulated Gate Bipolar Transistors (IGBT) 492

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGW30NC60VD by STMicroelectronics

STGW30NC60VD

STMicroelectronics

STGW30NC60VD by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 80A max collector current, and 250W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 280ns.

80 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

280 ns

42.5 ns

STGW40NC60WD by STMicroelectronics

STGW40NC60WD

STMicroelectronics

STGW40NC60WD by STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, 70 A collector current, and a fast turn-off time of 280 ns. Ideal for high-performance switching in industrial systems.

70 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247AC

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

280 ns

46 ns

STGF19NC60WD by STMicroelectronics

STGF19NC60WD

STMicroelectronics

STGF19NC60WD from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 32W, and operates at up to 150 °C. Its fast switching times (ton: 25ns, toff: 127ns) enhance efficiency.

ISOLATED

14 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

32 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

127 ns

25 ns

STGE50NC60WD by STMicroelectronics

STGE50NC60WD

STMicroelectronics

STGE50NC60WD from STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max VCEsat of 2.6V, supports up to 100A collector current, and operates at a max temp of 150 °C. Its compact flange mount design ensures efficient thermal management.

ISOLATED

100 A

600 V

SINGLE WITH BUILT-IN DIODE

20 V

R-PUFM-X4

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

260 W

Not Qualified

Insulated Gate BIP Transistors

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

343 ns

69 ns

2.6 V

STGE50NC60VD by STMicroelectronics

STGE50NC60VD

STMicroelectronics

STGE50NC60VD by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.5V, IC of 90A, and Pmax of 260W. Ideal for power control applications due to its fast turn-off time (toff) of 247ns and turn-on time (ton) of 61ns. Operates at a max temperature of 150°C with a collector-emitter voltage rating of 600V.

ISOLATED

90 A

600 V

SINGLE WITH BUILT-IN DIODE

20 V

R-XUFM-X4

1

4

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

260 W

Not Qualified

Insulated Gate BIP Transistors

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

247 ns

61 ns

2.5 V

STGB6NC60HD-1 by STMicroelectronics

STGB6NC60HD-1

STMicroelectronics

STGB6NC60HD-1 from STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max collector-emitter voltage of 600V, a nominal turn-off time of 222ns, and can handle up to 15A of current. This robust device operates efficiently in high-temperature environments up to 150 °C.

15 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-262AA

R-PSIP-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

N-CHANNEL

56 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

222 ns

17.3 ns

STGBL6NC60DT4 by STMicroelectronics

STGBL6NC60DT4

STMicroelectronics

STGBL6NC60DT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max collector-emitter voltage of 600V, 14A collector current, and a fast turn-off time of 122ns. Ideal for applications in energy conversion and motor drives.

14 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

56 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

POWER CONTROL

SILICON

122 ns

10.5 ns

STGDL6NC60DT4 by STMicroelectronics

STGDL6NC60DT4

STMicroelectronics

STGDL6NC60DT4 by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max collector-emitter voltage of 600V, a nominal turn-off time of 122ns, and operates at up to 150 °C. Its compact surface mount design ensures efficient thermal management.

13 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-252AA

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

50 W

Not Qualified

Insulated Gate BIP Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

POWER CONTROL

SILICON

122 ns

10.5 ns

STGFL6NC60D by STMicroelectronics

STGFL6NC60D

STMicroelectronics

STGFL6NC60D by STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max collector-emitter voltage of 600V, a turn-off time of 122ns, and can handle up to 7A current. Its robust design ensures reliable performance in demanding environments.

ISOLATED

7 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

22 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

122 ns

10.5 ns

STGPL6NC60D by STMicroelectronics

STGPL6NC60D

STMicroelectronics

STGPL6NC60D from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, 14A collector current, and a fast turn-off time of 122ns. Ideal for high-temperature environments with a max operating temp of 150 °C.

14 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

56 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

122 ns

10.5 ns

STGW30N90D by STMicroelectronics

STGW30N90D

STMicroelectronics

STGW30N90D from STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max collector-emitter voltage of 900 V, a power dissipation of 220 W, and operates at up to 150 °C. Its fast switching times (ton: 41 ns, toff: 928 ns) enhance efficiency in various electronic systems.

60 A

900 V

SINGLE WITH BUILT-IN DIODE

5.75 V

25 V

TO-247

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

220 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

928 ns

41 ns

APT30GS60BRDQ2(G) by Microsemi

APT30GS60BRDQ2(G)

Microsemi

Microsemi's APT30GS60BRDQ2(G) is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 54A max collector current. Ideal for motor control applications, it features a single configuration with built-in diode and a nominal turn-off time of 412ns. Package style is flange mount with through-hole terminals.

COLLECTOR

54 A

600 V

SINGLE WITH BUILT-IN DIODE

TO-247AD

R-PSFM-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

TIN SILVER COPPER

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

412 ns

45 ns

STGF10NC60HD by STMicroelectronics

STGF10NC60HD

STMicroelectronics

STGF10NC60HD from STMicroelectronics is a robust N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, 20A collector current, and fast switching times (ton: 19ns, toff: 247ns). Its compact flange mount design ensures efficient thermal management.

ISOLATED

20 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

23 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

247 ns

19 ns

STGF8NC60KD by STMicroelectronics

STGF8NC60KD

STMicroelectronics

STGF8NC60KD by STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max collector-emitter voltage of 600V, a turn-off time of 242ns, and can handle up to 7A current. Its robust design ensures reliable performance in demanding environments.

ISOLATED

7 A

600 V

SINGLE WITH BUILT-IN DIODE

6.5 V

20 V

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

24 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

242 ns

23 ns

STGP8NC60KD by STMicroelectronics

STGP8NC60KD

STMicroelectronics

STGP8NC60KD by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 15A IC, and 65W Ptot. It is used for power control applications due to its fast turn-off time of 242ns and built-in diode configuration. The package style is flange mount with a max operating temperature of 150°C.

15 A

600 V

SINGLE WITH BUILT-IN DIODE

6.5 V

20 V

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

65 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

242 ns

23 ns

STGW35NC60WD by STMicroelectronics

STGW35NC60WD

STMicroelectronics

STGW35NC60WD by STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, a power dissipation of 250 W, and operates at up to 150 °C. Its fast switching times (ton: 42.5 ns, toff: 197 ns) enhance performance in various electronic systems.

70 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247AC

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

197 ns

42.5 ns

STGW40NC60KD by STMicroelectronics

STGW40NC60KD

STMicroelectronics

STGW40NC60KD from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, 70 A collector current, and a fast turn-off time of 338 ns. Ideal for high-performance switching in industrial systems.

70 A

600 V

SINGLE WITH BUILT-IN DIODE

6.5 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

338 ns

64 ns

STGW30N120KD by STMicroelectronics

STGW30N120KD

STMicroelectronics

STGW30N120KD IGBT from STMicroelectronics is ideal for motor control applications, featuring a max collector-emitter voltage of 1200 V and power dissipation of 220 W. It has a fast turn-on time of 57 ns and operates at up to 125 °C. This N-channel device ensures efficient performance in demanding environments.

60 A

1200 V

SINGLE WITH BUILT-IN DIODE

5.75 V

25 V

TO-247AC

R-PSFM-T3

1

3

125 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

220 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

MOTOR CONTROL

SILICON

756 ns

57 ns

STGW33IH120D by STMicroelectronics

STGW33IH120D

STMicroelectronics

STGW33IH120D IGBT from STMicroelectronics features a max collector-emitter voltage of 1200 V and power dissipation of 220 W, ideal for motor control applications. It has a fast turn-on time of 57 ns and operates at up to 150 °C. This N-channel device ensures efficient performance in demanding environments.

60 A

1200 V

SINGLE WITH BUILT-IN DIODE

5.75 V

25 V

TO-247AC

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

220 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

MOTOR CONTROL

SILICON

740 ns

57 ns

GT50N322A by Toshiba

GT50N322A

Toshiba

Toshiba's GT50N322A is an N-CHANNEL IGBT with 1000V max collector-emitter voltage, 50A max collector current, and 700ns turn-off time. Ideal for power control applications, it features a single configuration with built-in diode in a rectangular package style suitable for flange mount installations.

COLLECTOR

50 A

1000 V

SINGLE WITH BUILT-IN DIODE

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

700 ns

330 ns

STGW45NC60VD by STMicroelectronics

STGW45NC60VD

STMicroelectronics

STGW45NC60VD from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, 90 A collector current, and a fast turn-off time of 366 ns. Ideal for high-performance switching in industrial systems.

90 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

270 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

366 ns

46 ns

CM1000E3U-34NF by Powerex

CM1000E3U-34NF

Powerex

Powerex CM1000E3U-34NF is an N-CHANNEL IGBT with 1700V VCE, 1000A IC, and 150°C max temp. Ideal for power control applications due to its single configuration with built-in diode and flange mount package style.

ISOLATED

1000 A

1700 V

SINGLE WITH BUILT-IN DIODE

R-XUFM-X4

1

4

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

IKD06N60R by Infineon Technologies

IKD06N60R

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 12 A; Transistor Application: POWER CONTROL;

COLLECTOR

12 A

600 V

SINGLE WITH BUILT-IN DIODE

5.7 V

20 V

TO-252

R-PSSO-G2

e3

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

100 W

Not Qualified

Insulated Gate BIP Transistors

YES

TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

335 ns

22 ns

IKD10N60R by Infineon Technologies

IKD10N60R

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 20 A; JESD-609 Code: e3;

COLLECTOR

20 A

600 V

SINGLE WITH BUILT-IN DIODE

5.7 V

20 V

TO-252

R-PSSO-G2

e3

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

150 W

Not Qualified

Insulated Gate BIP Transistors

YES

TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

428 ns

24 ns

IKD15N60R by Infineon Technologies

IKD15N60R

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 30 A; Maximum Operating Temperature: 175 Cel;

30 A

600 V

SINGLE WITH BUILT-IN DIODE

5.7 V

20 V

TO-252

R-PSSO-G2

e3

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

YES

TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

430 ns

26 ns

STGW35HF60WD by STMicroelectronics

STGW35HF60WD

STMicroelectronics

STGW35HF60WD from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, 200 W power dissipation, and fast switching times (ton: 45 ns, toff: 295 ns). Ideal for high-temperature environments with a max operating temp of 150 °C.

LOW CONDUCTION LOSS

60 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

200 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

295 ns

45 ns

STGW45HF60WD by STMicroelectronics

STGW45HF60WD

STMicroelectronics

STGW45HF60WD by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 70A max collector current, and 250W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 250ns.

LOW CONDUCTION LOSS

70 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

250 ns

44 ns

STGW38IH130D by STMicroelectronics

STGW38IH130D

STMicroelectronics

STGW38IH130D by STMicroelectronics is an N-CHANNEL IGBT with 1300V VCE, 63A IC, and 250W Ptot. Ideal for power control applications, it features a built-in diode and operates up to 150°C.

63 A

1300 V

SINGLE WITH BUILT-IN DIODE

5.75 V

25 V

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

740 ns

STGWS38IH130D by STMicroelectronics

STGWS38IH130D

STMicroelectronics

STGWS38IH130D from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max collector-emitter voltage of 1300 V, a nominal turn-off time of 740 ns, and can handle up to 180 W dissipation. Ideal for high-temperature applications with a max operating temp of 150 °C.

55 A

1300 V

SINGLE WITH BUILT-IN DIODE

5.75 V

25 V

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

180 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

740 ns

STGW35NC120HD by STMicroelectronics

STGW35NC120HD

STMicroelectronics

STGW35NC120HD from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 1200 V, 60 A collector current, and a turn-off time of just 928 ns. Ideal for high-performance switching in industrial systems.

60 A

1200 V

SINGLE WITH BUILT-IN DIODE

5.75 V

25 V

TO-247

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

220 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

928 ns

41 ns

STGE50NB60HD by STMicroelectronics

STGE50NB60HD

STMicroelectronics

STGE50NB60HD from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max VCEsat of 2.8V, 600V collector-emitter voltage, and handles up to 100A current. With a compact flange mount design, it operates efficiently at temperatures up to 150 °C.

ISOLATED

100 A

600 V

SINGLE WITH BUILT-IN DIODE

20 V

R-PUFM-X4

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

300 W

Not Qualified

Insulated Gate BIP Transistors

NO

NICKEL

UNSPECIFIED

UPPER

MOTOR CONTROL

SILICON

540 ns

90 ns

2.8 V

STGP3NB60HD by STMicroelectronics

STGP3NB60HD

STMicroelectronics

STGP3NB60HD by STMicroelectronics is a robust N-channel IGBT designed for motor control applications. It features a max collector-emitter voltage of 600 V, power dissipation of 70 W, and fast switching times (ton: 16 ns, toff: 168 ns). Its flange mount design ensures reliable performance in demanding environments.

10 A

600 V

SINGLE WITH BUILT-IN DIODE

5 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

70 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

168 ns

16 ns

FGP30N6S2D by Fairchild Semiconductor

FGP30N6S2D

Fairchild Semiconductor

Fairchild Semiconductor's FGP30N6S2D is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 45A max collector current. It has a built-in diode, 100ns fall time, and 163ns turn off time. Ideal for power control applications with a max power dissipation of 167W at up to 150°C operating temperature.

LOW CONDUCTION LOSS

45 A

600 V

SINGLE WITH BUILT-IN DIODE

100 ns

5 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

167 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

163 ns

28 ns

NGTB30N60SWG by Onsemi

NGTB30N60SWG

Onsemi

NGTB30N60SWG by Onsemi is an N-CHANNEL IGBT with 600V VCE, 60A IC, and 189W Pd. It has a toff of 285ns and ton of 90ns, suitable for power control applications requiring fast switching speeds. The transistor comes in a PLASTIC/EPOXY package with through-hole terminals and can operate up to 150 °C.

COLLECTOR

60 A

600 V

SINGLE WITH BUILT-IN DIODE

6.5 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

189 W

Insulated Gate BIP Transistors

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

285 ns

90 ns

FMG1G100US60L by Fairchild Semiconductor

FMG1G100US60L

Fairchild Semiconductor

FMG1G100US60L by Fairchild Semiconductor is an N-CHANNEL IGBT with 600V VCEsat, 100A IC, and 2.8V VCE. Ideal for MOTOR CONTROL applications, it has a toff of 320ns and ton of 85ns. The package style is FLANGE MOUNT with PLASTIC/EPOXY body material and SILICON element.

LOW CONDUCTION LOSS

ISOLATED

100 A

600 V

SINGLE WITH BUILT-IN DIODE

20 V

R-PUFM-X7

1

7

125 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

400 W

Not Qualified

Insulated Gate BIP Transistors

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

MOTOR CONTROL

SILICON

320 ns

85 ns

2.8 V

FGH20N6S2D by Fairchild Semiconductor

FGH20N6S2D

Fairchild Semiconductor

FGH20N6S2D by Fairchild Semiconductor is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max gate-emitter voltage of 20V. It has a single configuration with built-in diode, ideal for power control applications. This transistor offers fast switching times with a nominal turn-off time of 205ns and a max fall time of 105ns.

LOW CONDUCTION LOSS

28 A

600 V

SINGLE WITH BUILT-IN DIODE

105 ns

5 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

125 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

205 ns

11.5 ns

STGB3NB60KDT4 by STMicroelectronics

STGB3NB60KDT4

STMicroelectronics

STGB3NB60KDT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max collector-emitter voltage of 600V, 10A collector current, and fast switching times (ton: 19ns, toff: 220ns). Ideal for applications in energy conversion and motor drives.

10 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

68 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

220 ns

19 ns

STGB7NB60KDT4 by STMicroelectronics

STGB7NB60KDT4

STMicroelectronics

STGB7NB60KDT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max collector-emitter voltage of 600V, 14A collector current, and operates at up to 150 °C. Ideal for applications requiring high efficiency in compact designs.

14 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

95 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

202 ns

21 ns

STGP3NB60KD by STMicroelectronics

STGP3NB60KD

STMicroelectronics

STGP3NB60KD by STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, a turn-off time of 220ns, and can handle up to 68W dissipation. Ideal for high-performance switching in industrial systems.

10 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

68 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

220 ns

19 ns

STGP7NB60KD by STMicroelectronics

STGP7NB60KD

STMicroelectronics

STGP7NB60KD by STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, 14A collector current, and a fast turn-off time of 202ns. Ideal for high-performance switching in industrial systems.

14 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

95 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

202 ns

21 ns

STGP12NB60HD by STMicroelectronics

STGP12NB60HD

STMicroelectronics

STGP12NB60HD from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, a power dissipation of 100W, and fast switching times (ton: 51ns, toff: 295ns). Its robust design ensures reliable performance in demanding environments.

30 A

600 V

SINGLE WITH BUILT-IN DIODE

5 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

100 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

295 ns

51 ns

STGW20NB60KD by STMicroelectronics

STGW20NB60KD

STMicroelectronics

STGW20NB60KD from STMicroelectronics is a powerful N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 150W, and fast switching times (ton: 76ns, toff: 280ns). Its robust design ensures reliable performance in demanding environments.

40 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247AC

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

150 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

280 ns

76 ns

STGB3NB60FDT4 by STMicroelectronics

STGB3NB60FDT4

STMicroelectronics

STGB3NB60FDT4 from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 68W, and fast switching times (ton: 16.5ns, toff: 535ns). Its compact design ensures efficient performance in surface mount configurations.

6 A

600 V

SINGLE WITH BUILT-IN DIODE

5 V

20 V

R-PSSO-G2

e0

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

68 W

Not Qualified

Insulated Gate BIP Transistors

YES

TIN LEAD

GULL WING

SINGLE

MOTOR CONTROL

SILICON

535 ns

16.5 ns

STGP3NB60FD by STMicroelectronics

STGP3NB60FD

STMicroelectronics

STGP3NB60FD by STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 68W, and operates at up to 150 °C. Its fast switching times enhance efficiency in various systems.

6 A

600 V

SINGLE WITH BUILT-IN DIODE

5 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

68 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

535 ns

16.5 ns

STGF3NB60FD by STMicroelectronics

STGF3NB60FD

STMicroelectronics

STGF3NB60FD from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 25W, and a turn-off time of just 535ns. This robust device operates efficiently up to 150 °C.

ISOLATED

6 A

600 V

SINGLE WITH BUILT-IN DIODE

5 V

20 V

TO-220AB

R-PSFM-T3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

25 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

535 ns

16.5 ns

STGB12NB60KDT4 by STMicroelectronics

STGB12NB60KDT4

STMicroelectronics

STGB12NB60KDT4 from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 125W, and fast switching times (toff: 461ns, ton: 39.5ns). Its compact design ensures efficient performance in surface mount configurations.

30 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

125 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

MOTOR CONTROL

SILICON

461 ns

39.5 ns

STGP12NB60KD by STMicroelectronics

STGP12NB60KD

STMicroelectronics

STGP12NB60KD from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 125W, and a turn-off time of 461ns. This robust device operates efficiently at up to 150 °C.

30 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

125 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

461 ns

39.5 ns

IXGR40N60C2D1 by IXYS Corporation

IXGR40N60C2D1

IXYS Corporation

IXGR40N60C2D1 by IXYS Corp is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 56A max collector current, and 210ns turn-off time. Ideal for power control applications due to its single configuration with built-in diode and silicon transistor element material.

ISOLATED

56 A

600 V

SINGLE WITH BUILT-IN DIODE

R-PSIP-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

Not Qualified

NO

TIN SILVER COPPER

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

210 ns

38 ns