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FZ400R12KS4HOSA1

Infineon Technologies

FZ400R12KS4HOSA1 by Infineon Technologies

FZ400R12KS4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 1200V and current of 510A. Featuring a turn-off time of 590ns and turn-on time of 180ns, it is ideal for high-power applications requiring fast switching such as industrial motor drives and renewable energy systems.

Median Price

$168.000

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 26 parts In-Stock

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$164.000

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26

$164.000

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Verical

USA . 26 parts In-Stock

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$172.000

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26

$172.000

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Distributors (In-Stock)

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Digiode

USA . 772 parts In-Stock

1+ parts

$121.600

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772

$121.600

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Nova Conductors

Japan . 700 parts In-Stock

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$162.346

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700

$162.346

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Vyrian

USA . 5,566 parts In-Stock

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5,566

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Distributors (Availability)

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Modulus Dynamics

Lithuania . 9,806 parts In-Stock

1+ parts

$0.949

100+ parts

$0.911

1k+ parts

$0.873

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-

9,806

$0.949

$0.911

$0.873

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AZTECH Wire

Italy . 398 parts In-Stock

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$5.072

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398

$5.072

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Ampacity Inc.

Singapore . 28 parts In-Stock

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$107.950

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28

$107.950

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Corphita

USA . 626 parts In-Stock

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$115.200

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626

$115.200

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Continental Prestige Electronics

USA . 2 parts In-Stock

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$145.210

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Netroflash

USA . 100 parts In-Stock

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$162.346

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$154.229

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$150.982

100

$162.346

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$154.229

$150.982

QUARKTWIN TECHNOLOGY LTD

USA . 24,181 parts In-Stock

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Microchip USA

USA . 11,448 parts In-Stock

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Argo Parts USA

USA . 2,027 parts In-Stock

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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Overview

Elevate your power electronics with the FZ400R12KS4HOSA1 by Infineon Technologies. As a leading manufacturer in the industry, Infineon Technologies delivers top-notch quality and reliability in their Insulated Gate Bipolar Transistors (IGBT). This N-CHANNEL transistor boasts a single configuration with a built-in diode, making it perfect for high-power applications. With a maximum collector-emitter voltage of 1200V and a maximum collector current of 510A, this IGBT offers unbeatable performance and efficiency. Upgrade your projects with the FZ400R12KS4HOSA1 and experience superior power management like never before.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs are known for their high efficiency and fast switching speeds, making them ideal for applications requiring power management and motor control.

Configuration: SINGLE WITH BUILT-IN DIODE

Having a built-in diode simplifies the circuit design and reduces component count, resulting in cost savings and improved reliability.

Package Shape: RECTANGULAR

Rectangular package shape allows for easier mounting and thermal management, enhancing overall system performance.

Nominal Turn Off Time (toff): 590 ns

Fast turn-off time ensures efficient operation and reduces power loss, making the IGBT suitable for high-frequency applications.

No. of Terminals: 5

Having 5 terminals provides flexibility in circuit connections and allows for optimized performance in various applications.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers secure mechanical mounting and heat dissipation, improving reliability and overall performance of the IGBT.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this IGBT can withstand high temperature environments and maintain reliable operation.

Maximum Collector-Emitter Voltage: 1200 V

High maximum collector-emitter voltage rating makes the IGBT suitable for high voltage applications such as power supplies and inverters.

Transistor Element Material: SILICON

Silicon material offers good thermal conductivity and high voltage capability, making it a reliable choice for power electronic applications.

Maximum Collector Current (IC): 510 A

High collector current rating allows the IGBT to handle large power loads, making it ideal for high power applications such as motor drives and converters.

Terminal Position: UPPER

Having terminals positioned on the upper side simplifies circuit layout and connections, improving overall system integration and performance.

Case Connection: ISOLATED

Isolated case connection enhances safety and protects the IGBT from voltage transients, ensuring reliable operation in demanding environments.

Nominal Turn On Time (ton): 180 ns

Fast turn-on time helps improve efficiency and reduce switching losses, making the IGBT suitable for high-frequency and high-power applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FZ400R12KS4HOSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

JESD-30 Code:

R-XUFM-X5

No. of Elements:

1

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

590 ns

Nominal Turn On Time (ton):

180 ns

Trade Compliance

FZ400R12KS4HOSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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