Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 2400 W; Maximum Collector Current (IC): 400 A; Case Connection: ISOLATED;
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Insulated Gate Bipolar Transistors (IGBT) FZ400R12KP4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies
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FZ400R12KP4 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
2N2222A
Taitron Components
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; No. of Terminals: 3;
CRCW080510R0FKEA
Vishay Intertechnology
Vishay Intertechnology's CRCW080510R0FKEA is a fixed resistor with 10 ohm resistance, 1% tolerance, and 0.125 W power dissipation. Ideal for surface mount applications in automotive electronics due to its AEC-Q200 reference standard and operating voltage of 150 V. Operating temperature range from -55 to 155 °C ensures reliability in various environments.
1N4148WS
Tak Cheong Electronics Holdings
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SMBJ18CA
Yageo
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002
Transys Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 60 V; Maximum Operating Temperature: 150 Cel;
Sipex
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): 240; Terminal Finish: TIN LEAD;
L7805CV
STMicroelectronics
L7805CV by STMicroelectronics is a fixed positive single output standard regulator with an output voltage of 5V and max current of 1.5A. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring stable voltage regulation in electronic circuits.
LM317LMX/NOPB
Texas Instruments
LM317LMX/NOPB by Texas Instruments is an adjustable positive single output standard regulator with a max input-output voltage differential of 40V. It operates in temperatures ranging from -40°C to 125°C and has a max output current of 0.1A, making it suitable for various applications requiring precise voltage regulation.
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BSS138LT3G
Onsemi
BSS138LT3G by Onsemi is a N-CHANNEL FET with a min DS breakdown voltage of 50V. It is used for switching applications and has a max drain current of 0.2A and max drain-source on resistance of 3.5 ohm.
NUP2105LT1G
NUP2105LT1G by Onsemi is a Transient Suppression Device with 350W power dissipation, 29.1V breakdown voltage, and 44V clamping voltage. Commonly used in electronic circuits for surge protection due to its bidirectional polarity and silicon diode element material.
1N4148
Hitachi
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LM555CN
Fairchild Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
Baneasa S A
BSS138
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Terminal Finish: Matte Tin (Sn) - annealed;
FSMLF327
Fox Electronics
FSMLF327 by Fox Electronics is a crystal oscillator with 20 ppm frequency tolerance, 144% stability, and 50000 ohm series resistance. Ideal for applications requiring precise timing such as communication systems, industrial automation, and consumer electronics. Operating temperature range from -40 to 85 °C.
LM107H
Raytheon Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Low-Offset: NO;
General Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-236AB; Qualification: Not Qualified; Package Style (Meter): SMALL OUTLINE;
LD1117S33TR
LD1117S33TR by STMicroelectronics is a fixed positive single output LDO regulator with a nominal output voltage of 3.3V and max output current of 1.3A. It has a small outline package style, operates at an adjustable temperature range from 0 to 125°C, and is ideal for applications requiring stable voltage regulation in compact electronic devices.
CRG0805F10R
TE Connectivity
TE Connectivity's CRG0805F10R is a 10 ohm fixed resistor with 1% tolerance and 0.125 W power dissipation. It features thick film technology, SMT package style, and matte tin over nickel terminal finish. Ideal for surface mount applications in electronics, offering a temperature coefficient of 200 ppm/°C and operating voltage of 150 V.
IXLF19N250A
IXYS Corporation
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 19 A; Nominal Turn On Time (ton): 150 ns;
IGW08T120
IGW08T120 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max collector current of 16A. It is designed for power control applications, featuring a nominal turn-off time of 710ns and a max power dissipation of 70W. The package style is flange mount with through-hole terminals, making it suitable for high-power electronic systems.
FS150R12PT4BOSA1
FS150R12PT4BOSA1 by Infineon is a N-CHANNEL IGBT with 6 elements in bridge configuration. It has a max voltage of 1200V, current rating of 200A, and turn off time of 600ns. Ideal for power control applications due to its high operating temperature of 175°C and built-in diode & thermistor.
IRG4BC30FDPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 31 A; JESD-609 Code: e3;
IKW75N65EH5XKSA1
IKW75N65EH5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 2.1V and IC of 90A, ideal for POWER CONTROL applications. It has a package style of FLANGE MOUNT, operating temperature range from -40 to 175 °C, and a turn-off time of 215ns.
FS50R12KE3
Infineon Technologies' FS50R12KE3 is a N-CHANNEL IGBT with 6 elements, VCEsat of 2.2V, and IC of 75A. Ideal for high-power applications like motor drives and renewable energy systems due to its max VCE of 1200V and power dissipation of 270W. Features built-in diode, thermistor, and fast turn-off time (toff) of 610ns for efficient performance.
HGT1S10N120BNS
HGT1S10N120BNS by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 4.2V and a max collector-emitter voltage of 1200V. It is designed for motor control applications, featuring a rise time of 15ns and a power dissipation of 298W.
IXGA20N120A3
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 180 W; Maximum Collector Current (IC): 40 A; Package Style (Meter): SMALL OUTLINE;
IKW40N65F5FKSA1
IKW40N65F5FKSA1 by Infineon is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 74A, and Pmax of 250W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 200ns and high operating temperature range (-40 to 175°C). Package style: FLANGE MOUNT.
FS820R08A6P2BBPSA1
Infineon's FS820R08A6P2BBPSA1 is an N-CHANNEL IGBT with 3 BANKS, SERIES CONNECTED, CENTER TAP configuration. It has 6 elements, 820 A IC, and 714 W power dissipation for POWER CONTROL applications. With VCEsat of 1.35V and toff of 1110ns, it operates b/w -40 to 150 °C effectively.
IRGP4640DPBF
IRGP4640DPBF by Infineon is an N-CHANNEL IGBT with 600V VCEsat, 65A IC, and 250W power dissipation. Ideal for power control applications, it features a built-in diode, 31ns rise time, and -55 to 175°C operating temperature range.
CM500HA-34A
Mitsubishi Electric
Mitsubishi Electric's CM500HA-34A is an N-CHANNEL IGBT with 1700V VCEsat, 500A IC, and 5000W power dissipation. Ideal for power control applications due to its high voltage and current capabilities. Rectangular package style with built-in diode makes it suitable for flange mount installations.
IKW40N65ES5XKSA1
IKW40N65ES5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V max collector-emitter voltage and 79A max collector current. It has a single configuration with built-in diode, ideal for power control applications. The transistor features a nominal turn-off time of 204ns and nominal turn-on time of 36ns, suitable for high-speed switching operations.
FZ900R12KP4HOSA1
FZ900R12KP4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V. It has a nominal turn off time of 840ns and turn on time of 370ns, making it ideal for power control applications. This single transistor with built-in diode comes in a rectangular package style with flange mount for easy installation.
STGWA40M120DF3
STGWA40M120DF3 by STMicroelectronics is an N-CHANNEL IGBT with a max power dissipation of 468W. It operates at a max temperature of 175°C and has a collector-emitter voltage of 1200V. It is commonly used in high-power applications such as motor drives and inverters.
FF300R17ME4BOSA1
FF300R17ME4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max voltage of 1700V and current of 375A, making it ideal for POWER CONTROL applications. With a turn-off time of 1520ns and turn-on time of 405ns, this RECTANGULAR package transistor operates at temperatures up to 175°C.
FGH40N65UFDTU_F085
FGH40N65UFDTU_F085 by Onsemi is an N-CHANNEL IGBT with VCEsat of 2.4V, IC of 80A, and Pmax of 290W. Ideal for power control applications, it operates up to 150°C with a VCE max of 650V.
IKW25N120H3
IKW25N120H3 by Infineon Technologies is a N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and max collector current of 50A. It is used for power control applications, offering a nominal turn-off time of 397ns and max power dissipation of 326W.
IKW30N60TFKSA1
IKW30N60TFKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a 600V max collector-emitter voltage and 60A max collector current. It has a nominal turn-off time of 382ns and nominal turn-on time of 50ns, making it ideal for power control applications requiring fast switching speeds. The package style is flange mount with through-hole terminals, suitable for high-power applications up to 175°C operating temperature.
CM150TX-24S1
Mitsubishi Electric's CM150TX-24S1 IGBT is an N-channel transistor with 6 elements, ideal for motor control applications. With a max VCEsat of 2.25V and IC of 150A, it offers efficient power dissipation up to 935W. Operating b/w -40°C to 150°C, it features fast rise/fall times (tr/tf) of 200/300ns for precise control.
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FZ400R12KE4HOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: UNSPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Terminals: 3;
FZ400R17KE4HOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 550 A; JESD-30 Code: R-XUFM-X3; Package Body Material: UNSPECIFIED;
FZ400R12KS4HOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 510 A; Package Body Material: UNSPECIFIED; Qualification: Not Qualified;
FZ400R12KE3B1
Eupec & Kg
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 650 A; No. of Elements: 1; Package Style (Meter): FLANGE MOUNT;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 2250 W; Maximum Collector Current (IC): 650 A; Package Style (Meter): FLANGE MOUNT;
FZ400R12KS4PHOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 510 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Terminal Form: UNSPECIFIED;
FZ400R17KE4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 2500 W; Maximum Collector Current (IC): 550 A; JESD-30 Code: R-XUFM-X3;
FZ400R12KP4HOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Nominal Turn Off Time (toff): 840 ns; No. of Elements: 1; Package Shape: RECTANGULAR;
FZ400R33KF2B5
Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 4800 W; Maximum Collector Current (IC): 660 A; No. of Elements: 1; Maximum Operating Temperature: 125 Cel; Maximum Collector-Emitter Voltage: 3300 V;
FZ400R12KE3HOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 650 A; Transistor Element Material: SILICON; Nominal Turn On Time (ton): 400 ns;
FZ400R12KS4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 2500 W; Maximum Collector Current (IC): 510 A; Qualification: Not Qualified;
FZ400R33KL2C_B5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 4900 W; Maximum Collector Current (IC): 750 A; Transistor Element Material: SILICON;
FZ400R17KE3_S4
Insulated Gate Bipolar Transistors;
FZ400R12KE3B1HOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 650 A; Terminal Position: UPPER; Package Style (Meter): FLANGE MOUNT;
FZ400R12KE4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 2400 W; Maximum Collector Current (IC): 400 A; No. of Terminals: 3;
FZ400R12KS4P
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Reference Standard: UL APPROVED; Maximum VCEsat: 3.7 V; Maximum Operating Temperature: 125 Cel;
FZ400R12KE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 2250 W; Maximum Collector Current (IC): 650 A; Qualification: Not Qualified;
FZ400R17KE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 2270 W; Maximum Collector Current (IC): 780 A; Terminal Position: UPPER;
FZ400R17KE3HOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 780 A; Qualification: Not Qualified; Package Body Material: UNSPECIFIED;
FZ400R12KF2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 2400 W; Maximum Collector Current (IC): 400 A; Transistor Element Material: SILICON;
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