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IKP30N65H5XKSA1

Infineon Technologies

IKP30N65H5XKSA1 by Infineon Technologies

IKP30N65H5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with 650V max collector-emitter voltage, 55A max collector current, and 224ns turn-off time. Ideal for power control applications due to its single configuration with built-in diode and silicon transistor element material. Suitable for use in various systems requiring efficient power management.

Median Price

$1.470

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 50 parts In-Stock

1+ parts

$1.249

100+ parts

$1.141

1k+ parts

$0.813

10k+ parts

-

50

$1.249

$1.141

$0.813

-

Chip1Stop

Japan . 500 parts In-Stock

1+ parts

$1.470

100+ parts

-

1k+ parts

-

10k+ parts

-

500

$1.470

-

-

-

Farnell

UK . 841 parts In-Stock

1+ parts

$2.074

100+ parts

$1.556

1k+ parts

$1.531

10k+ parts

-

841

$2.074

$1.556

$1.531

-

Element14

Singapore . 841 parts In-Stock

1+ parts

$2.293

100+ parts

$1.732

1k+ parts

$1.445

10k+ parts

-

841

$2.293

$1.732

$1.445

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Rochester

USA . 1,245 parts In-Stock

1+ parts

-

100+ parts

$1.320

1k+ parts

$1.100

10k+ parts

$0.977

1,245

-

$1.320

$1.100

$0.977

Verical

USA . 1,220 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.375

10k+ parts

$1.221

1,220

-

-

$1.375

$1.221

RS (Exports)

UK . 500 parts In-Stock

1+ parts

-

100+ parts

$1.853

1k+ parts

$1.708

10k+ parts

-

500

-

$1.853

$1.708

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 194 parts In-Stock

1+ parts

$1.226

100+ parts

-

1k+ parts

-

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-

194

$1.226

-

-

-

Schukat

Germany . 111 parts In-Stock

1+ parts

$3.077

100+ parts

$1.758

1k+ parts

-

10k+ parts

-

111

$3.077

$1.758

-

-

Vyrian

USA . 3,759 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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3,759

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 11,771 parts In-Stock

1+ parts

$0.924

100+ parts

$0.887

1k+ parts

$0.850

10k+ parts

-

11,771

$0.924

$0.887

$0.850

-

Corphita

USA . 493 parts In-Stock

1+ parts

$1.161

100+ parts

-

1k+ parts

-

10k+ parts

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493

$1.161

-

-

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Continental Prestige Electronics

USA . 575 parts In-Stock

1+ parts

$2.230

100+ parts

$1.520

1k+ parts

$1.150

10k+ parts

-

575

$2.230

$1.520

$1.150

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Microchip USA

USA . 9,982 parts In-Stock

1+ parts

$23.335

100+ parts

-

1k+ parts

-

10k+ parts

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9,982

$23.335

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iodParts Technologies Inc.

India . 5,408 parts In-Stock

1+ parts

-

100+ parts

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5,408

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Glotronic Ltd.

UK . 3,824 parts In-Stock

1+ parts

-

100+ parts

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3,824

-

-

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Perfect Parts

USA . 1,848 parts In-Stock

1+ parts

-

100+ parts

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1,848

-

-

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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1,000

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Overview

Elevate your power control capabilities with the IKP30N65H5XKSA1 by Infineon Technologies. Crafted with precision and expertise, this Insulated Gate Bipolar Transistor offers reliable performance and efficiency in a variety of applications. From industrial machinery to renewable energy systems, this N-CHANNEL transistor with a built-in diode delivers unmatched quality and value. Experience seamless power control and enhanced functionality with the IKP30N65H5XKSA1, setting new standards for performance and reliability in the industry.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and durable.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have lower conduction losses and higher efficiency compared to P-channel IGBTs, making them a good choice for power control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and saves space on the PCB.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, providing efficient and reliable performance.

Maximum Collector-Emitter Voltage: 650 V

Can handle high voltage levels, suitable for a wide range of power control applications.

Nominal Turn Off Time (toff): 224 ns

Low turn-off time ensures fast switching capabilities, minimizing power losses.

Maximum Collector Current (IC): 55 A

With a high collector current rating, this IGBT can handle high power loads without overheating.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IKP30N65H5XKSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

224 ns

Nominal Turn On Time (ton):

28 ns

Trade Compliance

IKP30N65H5XKSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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