Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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MPSA05RLRMG
Onsemi
MPSA05RLRMG by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 60V and max current of 0.5A. With a min DC current gain of 100, it's ideal for amplifier applications. This through-hole transistor has a package style of cylindrical and can handle up to 150°C operating temperature.
.5 A
60 V
SINGLE
100
TO-92
O-PBCY-T3
e1
1
3
150 Cel
PLASTIC/EPOXY
ROUND
CYLINDRICAL
260
NPN
.625 W
Not Qualified
Other Transistors
NO
TIN SILVER COPPER
THROUGH-HOLE
BOTTOM
AMPLIFIER
SILICON
100 MHz
MPSA13RLRPG
MPSA13RLRPG by Onsemi is a NPN Darlington BJT with hFE of 10000, VCEO of 30V, and IC of 0.5A. Ideal for amplifier applications due to its high gain and low collector-emitter voltage. Its cylindrical package makes it suitable for through-hole mounting in various electronic circuits.
30 V
DARLINGTON
10000
125 MHz
MPSA14RLRAG
MPSA14RLRAG by Onsemi is a NPN Darlington BJT with hFE of 20000, VCEO of 30V, and fT of 125MHz. Ideal for amplifier applications due to its high gain and frequency response in a cylindrical package with through-hole terminals.
20000
Tin/Silver/Copper (Sn/Ag/Cu)
40
MPSA27G
MPSA27G by Onsemi is a NPN Darlington BJT transistor with hFE of 10000, Vce of 60V, and fT of 125MHz. Ideal for amplifier applications due to its high gain and operating temperature up to 150 °C. Packaged in cylindrical shape with through-hole terminals for easy installation.
TO-226AA
MPSA42RLRPG
MPSA42RLRPG by Onsemi is a NPN BJT transistor with 300V VCEO, 0.5A IC, and 50MHz fT. Ideal for amplifier applications, it has a min hFE of 40 and can operate up to 150°C. The package is cylindrical with through-hole terminals made of tin silver copper.
300 V
50 MHz
MPSA55RLRAG
MPSA55RLRAG by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It offers a min hFE of 100 and can handle a max collector-emitter voltage of 60V. With a max operating temperature of 150°C, it has a power dissipation of 0.625W in a cylindrical package suitable for through-hole mounting.
PNP
MPSA56RLRMG
MPSA56RLRMG by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 80V, max. collector current of 0.5A, and min. DC current gain of 100. Ideal for amplifier applications due to its cylindrical package style, it has a max power dissipation of 0.625W and operates up to 150 °C temperature range.
80 V
MPSA92RLRAG
MPSA92RLRAG by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 300V, ideal for amplifier applications. Featuring a min. DC current gain of 25 and max. power dissipation of 0.625W, it operates at up to 150 °C. Its through-hole package style and cylindrical shape make it suitable for various electronic designs.
25
MPSA92RLRPG
MPSA92RLRPG by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.625W, hFE of 25, and can handle up to 300V collector-emitter voltage. Its package style is cylindrical with through-hole terminals, suitable for various electronic circuits.
DDTB122LC-7-F
Diodes Incorporated
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .5 A;
BUILT-IN BIAS RESISTOR RATIO IS 45.45
50 V
SINGLE WITH BUILT-IN RESISTOR
56
R-PDSO-G3
e3
RECTANGULAR
SMALL OUTLINE
.2 W
BIP General Purpose Small Signal
YES
MATTE TIN
GULL WING
DUAL
30
200 MHz
DDTB122TC-7-F
BUILT-IN BIAS RESISTOR
40 V
DDTB142JC-7-F
BUILT-IN BIAS RESISTOR RATIO IS 21.28
DDTB142JU-7-F
BUILT-IN BIAS RESISTANCE RATIO IS 21.28
DDTB142TC-7-F
DDTD122LC-7-F
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .5 A;
BUILT IN BIAS RESISTOR RATIO 45.45
DDTD122TC-7-F
BUILT IN BIAS RESISTOR
DDTD142TC-7-F
MSD1328-ST1G
The Onsemi MSD1328-ST1G is a NPN BJT transistor with 300 min hFE, 0.5A IC, and 20V VCE. Ideal for amplifier applications, it comes in a small outline package with GULL WING terminals for surface mount assembly. Operating up to 150 °C, it has a peak reflow temperature of 260°C.
20 V
300
TIN
DS2003TMT/NOPB
National Semiconductor
DS2003TMT/NOPB by National Semiconductor is a NPN BJT transistor for switching applications. It has 7 elements, 16 terminals, and can handle a max collector-emitter voltage of 55V. With surface mount capability and a max collector current of 0.5A, it's ideal for compact electronic designs.
LOGIC LEVEL COMPATIBLE
55 V
COMPLEX
R-PDSO-G16
7
16
Matte Tin (Sn)
SWITCHING
DS2003TMTX/NOPB
DS2003TMTX/NOPB by National Semiconductor is a NPN BJT transistor for switching applications. It has 7 elements, 16 terminals, and a max IC of 0.5A. With a VCE of 55V, it is ideal for surface mount designs requiring high-speed switching capabilities.
MPSW92G
MPSW92G by Onsemi is a PNP BJT transistor with 1W power dissipation, 300V max collector-emitter voltage, and 50MHz transition frequency. Ideal for switching applications in electronics due to its high current gain and operating temperature up to 150 °C.
TO-226
1 W
BC638ZL1G
BC638ZL1G by Onsemi is a PNP BJT with 3 terminals, max. power dissipation of 1.5W, and max. collector-emitter voltage of 60V. Ideal for applications requiring a single configuration transistor with a min DC current gain of 40 (hFE), such as amplifiers or signal processing circuits.
EUROPEAN PART NUMBER
1.5 W
150 MHz
BC640ZL1G
BC640ZL1G by Onsemi is a PNP BJT with 3 terminals, max power dissipation of 1.5W, and max collector-emitter voltage of 80V. Ideal for applications requiring a min DC current gain of 40, such as amplifiers or signal processing circuits due to its high transition frequency of 150MHz.
MPS8599RLRAG
MPS8599RLRAG by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 80V, max. collector current of 0.5A, and min. DC current gain of 75 hFE. It is used in amplifier applications due to its cylindrical package style, through-hole terminals, and silicon element material for high performance amplification at up to 150MHz transition frequency.
75
MPSA06RL1G
MPSA06RL1G by Onsemi is a NPN small signal bipolar junction transistor (BJT) with a max power dissipation of 0.625W and a min DC current gain of 100. It is commonly used as an amplifier in various applications.
MPSA06RLRMG
MPSA06RLRMG by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 80V and max current of 0.5A. With a min DC current gain of 100, it's ideal for amplifier applications. This through-hole transistor has a max power dissipation of 0.625W and operates up to 150 °C.
MPSA28RLRPG
MPSA28RLRPG by Onsemi is a NPN Darlington BJT with hFE of 10000, VCEO of 80V, and IC of 0.5A. Ideal for applications requiring high current gain and voltage amplification in through-hole configurations. Suitable for use in electronic circuits where precise switching and amplification are needed.
MPSA29RLRPG
MPSA29RLRPG by Onsemi is a NPN Darlington BJT with hFE of 10000, VCEO of 100V, and IC of 0.5A. Ideal for amplifier applications, it operates up to 150 °C with a transition frequency of 200MHz in a cylindrical package.
100 V
MPSA42G
MPSA42G by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 300V, ideal for amplifier applications. It has a min. DC current gain of 40 and max. power dissipation of 0.625W in a cylindrical package style. With terminal finish of Tin Silver Copper, it operates up to 150°C with nominal transition frequency of 50MHz.
MPSA42RLRMG
MPSA42RLRMG by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 300V and max. collector current of 0.5A, ideal for amplifier applications. With a min. DC current gain of 40 and max. power dissipation of 1.5W, it operates at up to 150°C making it suitable for various electronic designs requiring high performance in a cylindrical package style.
MPSA56RLRAG
MPSA56RLRAG by Onsemi is a PNP BJT transistor with max. power dissipation of 0.625W, hFE of 100, and max. collector-emitter voltage of 80V. It is used in amplifier applications due to its cylindrical package style and silicon element material for high performance amplification at up to 50MHz transition frequency.
MPSA63RLRAG
MPSA63RLRAG by Onsemi is a PNP Darlington BJT with 1.5W power dissipation, hFE of 10000, and max temp of 150 °C. Ideal for switching applications due to its 30V VCE, 0.5A IC, and high transition frequency of 125MHz in a cylindrical package.
MPSA92G
MPSA92G by Onsemi is a PNP BJT transistor with max. power dissipation of 0.625W, hFE of 25, and VCE of 300V. Ideal for amplifier applications due to its single configuration and cylindrical package style.
MPSW06G
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .5 A;
60
MPSW06RLRAG
MPSW06RLRAG by Onsemi is a NPN BJT transistor with 80V VCEO, 0.5A IC, and 1W Ptot. Ideal for amplifier applications due to its hFE of 60 and fT of 50MHz. Packaged in cylindrical form with through-hole terminals for easy integration.
MPSW56RLRAG
MPSW56RLRAG by Onsemi is a PNP BJT with 80V VCEO, 50MHz fT, and 1W power dissipation. Ideal for amplifier applications due to its single configuration and hFE of 50. Its through-hole terminals and cylindrical package make it suitable for various electronic designs.
50
MPSA63G
MPSA63G by Onsemi is a PNP BJT transistor with a Darlington configuration. It has a max power dissipation of 1.5W, hFE of 10000, and operates up to 150°C. Ideal for switching applications due to its high collector current of 0.5A and max voltage of 30V.
MPSA64G
The Onsemi MPSA64G is a PNP Darlington transistor with 3 terminals, ideal for switching applications. With a max power dissipation of 1.5W and max collector-emitter voltage of 30V, it operates at up to 150 °C. Featuring a min DC current gain of 20k and nominal transition frequency of 125MHz, it is suitable for high-performance electronic circuits.
MPSA64RLRAG
MPSA64RLRAG by Onsemi is a PNP BJT with 30V VCEO, 0.5A IC, and 1.5W power dissipation. Ideal for switching applications, it features a high DC current gain of 20k hFE and operates up to 150 °C. Its Darlington configuration makes it suitable for various electronic designs requiring reliable performance in through-hole packages.
MPSA64RLRMG
MPSA64RLRMG by Onsemi is a PNP Darlington BJT with 3 terminals, hFE of 20000, and max. power dissipation of 1.5W. Ideal for switching applications, it operates at up to 150 °C with VCE of 30V. The transistor's SILICON material and cylindrical package make it suitable for high-frequency operations up to 125MHz.
MPSA13RLRAG
MPSA13RLRAG by Onsemi is a NPN Darlington transistor with 3 terminals, ideal for amplifier applications. It offers a high DC current gain of 10k and can handle up to 1.5W power dissipation. With a max operating temperature of 150°C and collector-emitter voltage of 30V, it is suitable for various electronic circuits requiring high gain and power handling capabilities.
MPSA13RLRMG
MPSA13RLRMG by Onsemi is a NPN Darlington transistor with a max power dissipation of 1.5W and a min DC current gain of 10,000. It is commonly used as an amplifier in various applications.
MPSA13ZL1G
MPSA13ZL1G by Onsemi is a NPN Darlington transistor with a max power dissipation of 1.5W and a min DC current gain of 10000. It is commonly used as an amplifier in various applications.
MPSA14RLRPG
MPSA14RLRPG by Onsemi is a NPN Darlington BJT with 3 terminals, ideal for amplifier applications. It offers a high DC current gain of 20k and can handle up to 1.5W power dissipation. With a max operating temp of 150 °C and Vce of 30V, it's suitable for various electronic designs requiring high performance in a cylindrical package.
MPSA42RL1G
MPSA42RL1G by Onsemi is a NPN BJT with 300V VCEO, 0.5A IC, and 50MHz fT. Ideal for low-power applications, it has a max power dissipation of 1.5W and operates b/w -55°C to 150°C. The through-hole package with tin silver copper finish makes it suitable for various electronic designs.
-55 Cel
MPSA42RLRAG
MPSA42RLRAG by Onsemi is a NPN BJT with max. power dissipation of 1.5W, hFE of 40, and VCE of 300V. Ideal for applications requiring high voltage switching in through-hole configurations at up to 150°C operating temperature.
MPSA42RLRFG
MPSA42RLRFG by Onsemi is a NPN BJT with 300V VCEO, 0.5A IC, and 1.5W Ptot. Ideal for low-power applications, it has hFE of 40 and fT of 50MHz. Its through-hole package makes it suitable for various electronic designs.
MPSA42ZL1G
MPSA42ZL1G by Onsemi is a NPN BJT transistor with max. power dissipation of 1.5W, hFE of 40, and VCE of 300V. Ideal for applications requiring high collector current (0.5A), it operates up to 150°C and has a transition frequency of 50MHz.
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