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.5 A Small Signal Bipolar Junction Transistors (BJT) 327

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
MPS8599RLRMG by Onsemi

MPS8599RLRMG

Onsemi

MPS8599RLRMG by Onsemi is a PNP BJT transistor with max. power dissipation of 0.625W, hFE of 75, and max. operating temp of 150 °C. Ideal for amplifier applications due to its high transition frequency of 150MHz and max collector-emitter voltage of 80V in a cylindrical package shape.

.5 A

80 V

SINGLE

75

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

150 MHz

2DA2018-7 by Diodes Incorporated

2DA2018-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 260 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .5 A;

.5 A

12 V

SINGLE

270

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

260 MHz

FMMT416TA by Diodes Incorporated

FMMT416TA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 40 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .5 A;

.5 A

8 pF

100 V

SINGLE

100

R-PDSO-G3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.5 W

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

40 MHz

.1 V

DSM80100M-7 by Diodes Incorporated

DSM80100M-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): .5 A; JESD-609 Code: e3; Peak Reflow Temperature (C): 260;

.5 A

80 V

SINGLE WITH BUILT-IN DIODE

120

R-PDSO-G6

e3

1

1

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

YES

MATTE TIN

GULL WING

DUAL

SILICON

DSM80101M-7 by Diodes Incorporated

DSM80101M-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): .5 A; JESD-30 Code: R-PDSO-G6; Minimum DC Current Gain (hFE): 120;

.5 A

80 V

SINGLE WITH BUILT-IN DIODE

120

R-PDSO-G6

e3

1

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

YES

MATTE TIN

GULL WING

DUAL

SILICON

BCP49H6327XTSA1 by Infineon Technologies

BCP49H6327XTSA1

Infineon Technologies

NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .5 A; No. of Elements: 1;

COLLECTOR

.5 A

60 V

DARLINGTON

2000

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

200 MHz

MMBTA42LT1HTSA1 by Infineon Technologies

MMBTA42LT1HTSA1

Infineon Technologies

Infineon's MMBTA42LT1HTSA1 is a NPN BJT transistor with hFE of 40, VCE of 300V, and IC of 0.5A. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance and fT of 70MHz.

.5 A

300 V

SINGLE

40

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

SILICON

70 MHz

ZDT694QTA by Diodes Incorporated

ZDT694QTA

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Collector Current (IC): .5 A; Package Shape: RECTANGULAR;

HIGH RELIABILITY

.5 A

120 V

SEPARATE, 2 ELEMENTS

150

R-PDSO-G8

e3

1

2

8

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

130 MHz

BCX19HZGT116 by ROHM

BCX19HZGT116

ROHM

ROHM BCX19HZGT116 is a NPN BJT transistor with hFE of 40, VCE of 45V, and IC of 0.5A. Ideal for amplifier applications due to its high transition frequency of 250MHz. Features Gull Wing terminals in a small outline package suitable for surface mount assembly.

.5 A

45 V

SINGLE

40

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

TIN

GULL WING

DUAL

10

AMPLIFIER

SILICON

250 MHz

PDTB113EUF by Nexperia

PDTB113EUF

Nexperia

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Collector Current (IC): .5 A; JESD-609 Code: e3;

BUILT IN BIAS RESISTANCE RATIO IS 1

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

33

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

140 MHz

PDTB114EUF by Nexperia

PDTB114EUF

Nexperia

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Collector Current (IC): .5 A; Terminal Form: GULL WING;

BUILT IN BIAS RESISTANCE RATIO IS 1

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

140 MHz

PDTB123EUF by Nexperia

PDTB123EUF

Nexperia

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Collector Current (IC): .5 A; Peak Reflow Temperature (C): 260;

BUILT IN BIAS RESISTANCE RATIO IS 1

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

40

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

140 MHz

PDTB123EUX by Nexperia

PDTB123EUX

Nexperia

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Collector Current (IC): .5 A; Maximum Collector-Emitter Voltage: 50 V;

BUILT IN BIAS RESISTANCE RATIO IS 1

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

40

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

140 MHz

PDTB123YUX by Nexperia

PDTB123YUX

Nexperia

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Collector Current (IC): .5 A; No. of Terminals: 3;

BUILT IN BIAS RESISTANCE RATIO IS 4.55

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

140 MHz

PDTD113EUF by Nexperia

PDTD113EUF

Nexperia

The Nexperia PDTD113EUF is a NPN BJT transistor with built-in resistor for switching applications. It has a hFE of 33, Vce of 50V, and IC of 0.5A. This small outline package with gull wing terminals is surface mountable and made of silicon, suitable for high-frequency operations up to 225MHz.

BUILT IN BIAS RESISTANCE RATIO IS 1

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

33

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

225 MHz

PDTD113EUX by Nexperia

PDTD113EUX

Nexperia

The Nexperia PDTD113EUX is a NPN BJT transistor with built-in resistor for switching applications. It has hFE of 33, VCE of 50V, and IC of 0.5A. This small outline package features Gull Wing terminals and operates at a transition frequency of 225MHz.

BUILT IN BIAS RESISTANCE RATIO IS 1

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

33

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

225 MHz

PDTD113ZUF by Nexperia

PDTD113ZUF

Nexperia

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 225 MHz; Maximum Collector Current (IC): .5 A; JESD-609 Code: e3;

BUILT IN BIAS RESISTANCE RATIO IS 10

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

225 MHz

PDTD114ETVL by Nexperia

PDTD114ETVL

Nexperia

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 225 MHz; Maximum Collector Current (IC): .5 A; No. of Terminals: 3;

BUILT IN BIAS RESISTANCE RATIO IS 1

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

TO-236AB

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

225 MHz

PDTD114EUF by Nexperia

PDTD114EUF

Nexperia

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 225 MHz; Maximum Collector Current (IC): .5 A; Transistor Element Material: SILICON;

BUILT IN BIAS RESISTANCE RATIO IS 1

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

225 MHz

PDTD123EUX by Nexperia

PDTD123EUX

Nexperia

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 225 MHz; Maximum Collector Current (IC): .5 A; Package Shape: RECTANGULAR;

BUILT IN BIAS RESISTANCE RATIO IS 1

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

40

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

225 MHz

PDTD123YUF by Nexperia

PDTD123YUF

Nexperia

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 225 MHz; Maximum Collector Current (IC): .5 A; No. of Elements: 1;

BUILT IN BIAS RESISTANCE RATIO IS 4.55

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

225 MHz

PDTD123YUX by Nexperia

PDTD123YUX

Nexperia

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 225 MHz; Maximum Collector Current (IC): .5 A; Terminal Finish: TIN;

BUILT IN BIAS RESISTANCE RATIO IS 4.55

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

225 MHz

PDTD143EUX by Nexperia

PDTD143EUX

Nexperia

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 225 MHz; Maximum Collector Current (IC): .5 A; Transistor Element Material: SILICON;

BUILT IN BIAS RESISTANCE RATIO IS 1

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

60

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

225 MHz

PDTD143XUF by Nexperia

PDTD143XUF

Nexperia

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 225 MHz; Maximum Collector Current (IC): .5 A; Terminal Finish: TIN;

BUILT IN BIAS RESISTANCE RATIO IS 2.13

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

225 MHz

PDTD143XUX by Nexperia

PDTD143XUX

Nexperia

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 225 MHz; Maximum Collector Current (IC): .5 A; Additional Features: BUILT IN BIAS RESISTANCE RATIO IS 2.13;

BUILT IN BIAS RESISTANCE RATIO IS 2.13

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

225 MHz

PIMN31F by Nexperia

PIMN31F

Nexperia

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Peak Reflow Temperature (C): 260; No. of Terminals: 6;

.5 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

70

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

BC807-16W/MIX by Nexperia

BC807-16W/MIX

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Terminal Position: DUAL;

.5 A

45 V

SINGLE

100

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

100 MHz

BC807-25W/MIX by Nexperia

BC807-25W/MIX

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Transistor Element Material: SILICON;

.5 A

45 V

SINGLE

160

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

100 MHz

BC807-40W/MIF by Nexperia

BC807-40W/MIF

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; No. of Elements: 1;

.5 A

45 V

SINGLE

250

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

100 MHz

BC807-40W/MIX by Nexperia

BC807-40W/MIX

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Transistor Element Material: SILICON;

.5 A

45 V

SINGLE

250

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

100 MHz

BC817-25W/MIX by Nexperia

BC817-25W/MIX

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Package Style (Meter): SMALL OUTLINE;

.5 A

45 V

SINGLE

160

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

100 MHz

BC817-40W/MIF by Nexperia

BC817-40W/MIF

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Terminal Form: GULL WING;

.5 A

45 V

SINGLE

250

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

100 MHz

BC817-40W/MIX by Nexperia

BC817-40W/MIX

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; No. of Elements: 1;

.5 A

45 V

SINGLE

250

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

100 MHz

PDTB113ZQAZ by Nexperia

PDTB113ZQAZ

Nexperia

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .5 A; No. of Elements: 1;

BUILT IN BIAS RESISTANCE RATIO IS 10

COLLECTOR

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-N3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

150 MHz

PDTB143XTVL by Nexperia

PDTB143XTVL

Nexperia

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Collector Current (IC): .5 A; Transistor Element Material: SILICON;

BUILT IN BIAS RESISTANCE RATIO IS 2.13

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

TO-236AB

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

140 MHz

PZTA14/ZLF by Nexperia

PZTA14/ZLF

Nexperia

NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Collector Current (IC): .5 A; No. of Terminals: 4;

COLLECTOR

.5 A

DARLINGTON

20000

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

GULL WING

DUAL

AMPLIFIER

SILICON

125 MHz

PZTA14/ZLX by Nexperia

PZTA14/ZLX

Nexperia

NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Collector Current (IC): .5 A; No. of Terminals: 4;

COLLECTOR

.5 A

DARLINGTON

20000

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

GULL WING

DUAL

AMPLIFIER

SILICON

125 MHz

PZTA42/ZLX by Nexperia

PZTA42/ZLX

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): .5 A; Terminal Position: DUAL;

COLLECTOR

.5 A

300 V

SINGLE

40

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

GULL WING

DUAL

AMPLIFIER

SILICON

50 MHz

BCV49H6327XTSA1 by Infineon Technologies

BCV49H6327XTSA1

Infineon Technologies

NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .5 A; Reference Standard: AEC-Q101;

COLLECTOR

.5 A

60 V

DARLINGTON

2000

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

TIN

FLAT

SINGLE

AMPLIFIER

SILICON

150 MHz

BC817K25WE6327HTSA1 by Infineon Technologies

BC817K25WE6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): .5 A; Reference Standard: AEC-Q101;

.5 A

45 V

SINGLE

160

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

GULL WING

DUAL

AMPLIFIER

SILICON

170 MHz

BC817K40WE6327HTSA1 by Infineon Technologies

BC817K40WE6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): .5 A; Terminal Form: GULL WING;

.5 A

45 V

SINGLE

250

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

GULL WING

DUAL

AMPLIFIER

SILICON

170 MHz

BC807-16WH6327 by Infineon Technologies

BC807-16WH6327

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .5 A; Maximum Collector-Emitter Voltage: 45 V;

.5 A

45 V

SINGLE

100

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

YES

GULL WING

DUAL

AMPLIFIER

SILICON

200 MHz

BC807-25WH6327 by Infineon Technologies

BC807-25WH6327

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .5 A; Package Style (Meter): SMALL OUTLINE;

.5 A

45 V

SINGLE

160

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

YES

GULL WING

DUAL

AMPLIFIER

SILICON

200 MHz

BC808-25WH6327 by Infineon Technologies

BC808-25WH6327

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY;

.5 A

25 V

SINGLE

160

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

YES

GULL WING

DUAL

AMPLIFIER

SILICON

200 MHz

BC817K16E6433HTMA1 by Infineon Technologies

BC817K16E6433HTMA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY;

.5 A

45 V

SINGLE

100

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

GULL WING

DUAL

AMPLIFIER

SILICON

170 MHz

BCR523E6433HTMA1 by Infineon Technologies

BCR523E6433HTMA1

Infineon Technologies

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; No. of Terminals: 6;

BUILT IN BIAS RESISTOR RATIO IS 0.1

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G6

1

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

BCV48H6327XTSA1 by Infineon Technologies

BCV48H6327XTSA1

Infineon Technologies

Infineon BCV48H6327XTSA1 is a PNP Darlington BJT transistor with hFE of 2000, VCE of 60V, and fT of 200MHz. Ideal for amplifier applications, it features a small outline package, surface mount capability, and AEC-Q101 compliance.

COLLECTOR

.5 A

60 V

DARLINGTON

2000

R-PSSO-F3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

AEC-Q101

YES

TIN

FLAT

SINGLE

AMPLIFIER

SILICON

200 MHz

2N1711PBFREE by Central Semiconductor

2N1711PBFREE

Central Semiconductor

2N1711PBFREE by Central Semiconductor is a NPN BJT transistor with VCEsat of 1.5V, hFE of 40, and IC of 0.5A. Ideal for switching applications due to its high transition frequency of 70MHz and max power dissipation of 3W in a cylindrical package.

.5 A

25 pF

SINGLE

40

TO-39

O-MBCY-W3

e3

1

3

200 Cel

-65 Cel

METAL

ROUND

CYLINDRICAL

NPN

.8 W

3 W

NO

MATTE TIN OVER NICKEL

WIRE

BOTTOM

SWITCHING

SILICON

70 MHz

1.5 V