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.5 A Small Signal Bipolar Junction Transistors (BJT) 327

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
SN75468NSRG4 by Texas Instruments

SN75468NSRG4

Texas Instruments

SN75468NSRG4 by Texas Instruments is a NPN bipolar junction transistor with 7 elements and 16 terminals. It has a max collector-emitter voltage of 100V, collector current of 0.5A, and operates b/w 0-70°C. Ideal for switching applications, it comes in a small outline package with gull wing terminals for surface mounting.

LOGIC LEVEL COMPATIBLE

.5 A

100 V

COMPLEX

R-PDSO-G16

e4

1

7

16

70 Cel

0 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

NICKEL PALLADIUM GOLD

GULL WING

DUAL

30

SWITCHING

SILICON

ULQ2003ADRG4 by Texas Instruments

ULQ2003ADRG4

Texas Instruments

ULQ2003ADRG4 by Texas Instruments is a NPN BJT with 7 elements and 16 terminals. It has a max collector-emitter voltage of 50V and max collector current of 0.5A, suitable for switching applications. The package is surface mountable with Gull Wing terminals in a small outline style, ideal for compact designs.

LOGIC LEVEL COMPATIBLE

.5 A

50 V

COMPLEX

MS-012AC

R-PDSO-G16

e4

1

7

16

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

ULQ2004ADG4 by Texas Instruments

ULQ2004ADG4

Texas Instruments

ULQ2004ADG4 by Texas Instruments is a NPN BJT with 7 elements and 16 terminals. It has a max collector-emitter voltage of 50V, collector current of 0.5A, and is used for switching applications. The package is surface mountable with GULL WING terminals in a RECTANGULAR shape.

LOGIC LEVEL COMPATIBLE

.5 A

50 V

COMPLEX

MS-012AC

R-PDSO-G16

e4

1

7

16

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

ULQ2004ADRG4 by Texas Instruments

ULQ2004ADRG4

Texas Instruments

ULQ2004ADRG4 by Texas Instruments is a NPN BJT transistor with 7 elements and 16 terminals. It has a max collector-emitter voltage of 50V and can handle a collector current of 0.5A, making it suitable for switching applications. This surface-mount transistor features a gull wing terminal form and is housed in a small outline rectangular package.

LOGIC LEVEL COMPATIBLE

.5 A

50 V

COMPLEX

MS-012AC

R-PDSO-G16

e4

1

7

16

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

MMS8550-H-TP by Micro Commercial Components

MMS8550-H-TP

Micro Commercial Components

MMS8550-H-TP by Micro Commercial Components is a PNP BJT with 3 terminals, hFE of 200, and max. power dissipation of 0.3W. Ideal for small outline applications requiring a max. collector-emitter voltage of 25V, operating temp up to 150°C, and transition frequency of 150MHz.

.5 A

25 V

SINGLE

200

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.3 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

10

SILICON

150 MHz

DZT658-13 by Diodes Incorporated

DZT658-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .5 A;

COLLECTOR

.5 A

10 pF

400 V

SINGLE

40

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

50 MHz

.5 V

PDTB123EK,115 by NXP Semiconductors

PDTB123EK,115

NXP Semiconductors

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 40; No. of Elements: 1;

.5 A

40

1

PNP

.25 W

BIP General Purpose Small Signal

YES

SILICON

PDTB123ES,126 by NXP Semiconductors

PDTB123ES,126

NXP Semiconductors

PNP; Surface Mount: NO; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 40; No. of Elements: 1;

.5 A

40

1

PNP

.5 W

BIP General Purpose Small Signal

NO

SILICON

PDTB123TK,115 by NXP Semiconductors

PDTB123TK,115

NXP Semiconductors

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .5 A; Transistor Element Material: SILICON; No. of Elements: 1;

.5 A

100

1

PNP

.25 W

BIP General Purpose Small Signal

YES

SILICON

PDTD113EK,115 by NXP Semiconductors

PDTD113EK,115

NXP Semiconductors

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .5 A; No. of Elements: 1; Transistor Element Material: SILICON;

.5 A

33

1

NPN

.25 W

BIP General Purpose Small Signal

YES

SILICON

PDTD113ES,126 by NXP Semiconductors

PDTD113ES,126

NXP Semiconductors

NPN; Surface Mount: NO; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .5 A; No. of Elements: 1; Transistor Element Material: SILICON;

.5 A

33

1

NPN

.5 W

BIP General Purpose Small Signal

NO

SILICON

2PB710AQ,115 by NXP Semiconductors

2PB710AQ,115

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Transistor Element Material: SILICON;

.5 A

15 pF

50 V

SINGLE

40

TO-236

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.6 V

2PB710AR,115 by NXP Semiconductors

2PB710AR,115

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 120 MHz; Maximum Collector Current (IC): .5 A; Maximum Collector-Base Capacitance: 15 pF;

.5 A

15 pF

50 V

SINGLE

40

TO-236

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

120 MHz

.6 V

2PB710AS,115 by NXP Semiconductors

2PB710AS,115

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .5 A;

.5 A

15 pF

50 V

SINGLE

40

TO-236

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.25 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

140 MHz

.6 V

2PD1820AQ,115 by NXP Semiconductors

2PD1820AQ,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .5 A; Peak Reflow Temperature (C): NOT SPECIFIED;

.5 A

50 V

SINGLE

85

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

Not Qualified

YES

TIN

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

150 MHz

2PD602AQ,115 by NXP Semiconductors

2PD602AQ,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Collector Current (IC): .5 A; Transistor Application: SWITCHING;

.5 A

15 pF

50 V

SINGLE

40

TO-236

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

140 MHz

.6 V

2PD602AR,115 by NXP Semiconductors

2PD602AR,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 160 MHz; Maximum Collector Current (IC): .5 A; Terminal Position: DUAL;

.5 A

15 pF

50 V

SINGLE

40

TO-236

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

160 MHz

.6 V

BC327,116 by NXP Semiconductors

BC327,116

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;

.5 A

45 V

SINGLE

100

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

80 MHz

.7 V

BC327,126 by NXP Semiconductors

BC327,126

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;

.5 A

45 V

SINGLE

100

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.625 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

80 MHz

BC327-25,116 by NXP Semiconductors

BC327-25,116

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;

.5 A

45 V

SINGLE

160

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

80 MHz

.7 V

BC327-40,116 by NXP Semiconductors

BC327-40,116

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;

.5 A

45 V

SINGLE

250

TO-92

O-PBCY-T3

e3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

80 MHz

.7 V

BC337,112 by NXP Semiconductors

BC337,112

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;

.5 A

45 V

SINGLE

100

TO-92

O-PBCY-W3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

TIN

WIRE

BOTTOM

SWITCHING

SILICON

100 MHz

.7 V

BC337-16,112 by NXP Semiconductors

BC337-16,112

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;

.5 A

45 V

SINGLE

100

TO-92

O-PBCY-W3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

TIN

WIRE

BOTTOM

SWITCHING

SILICON

100 MHz

.7 V

BC337-16,126 by NXP Semiconductors

BC337-16,126

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Transistor Element Material: SILICON;

.5 A

45 V

SINGLE

100

TO-92

O-PBCY-T3

e3

1

3

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

Not Qualified

NO

TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

BC337-25,112 by NXP Semiconductors

BC337-25,112

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;

.5 A

45 V

SINGLE

160

TO-92

O-PBCY-W3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

WIRE

BOTTOM

SWITCHING

SILICON

100 MHz

.7 V

BC337-25,116 by NXP Semiconductors

BC337-25,116

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;

.5 A

45 V

SINGLE

160

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

.7 V

BC337-25,126 by NXP Semiconductors

BC337-25,126

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY;

.5 A

45 V

SINGLE

160

TO-92

O-PBCY-T3

e3

1

3

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

Not Qualified

NO

TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

BC337-40,116 by NXP Semiconductors

BC337-40,116

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;

.5 A

45 V

SINGLE

250

TO-92

O-PBCY-T3

e3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

.7 V

BC517,112 by NXP Semiconductors

BC517,112

NXP Semiconductors

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 220 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;

.5 A

30 V

DARLINGTON

30000

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

220 MHz

1 V

BC517,116 by NXP Semiconductors

BC517,116

NXP Semiconductors

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 220 MHz; Maximum Collector Current (IC): .5 A; Maximum VCEsat: 1 V;

.5 A

30 V

DARLINGTON

30000

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

220 MHz

1 V

MPSA06,116 by NXP Semiconductors

MPSA06,116

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;

.5 A

80 V

SINGLE

100

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

.25 V

MPSA06,126 by NXP Semiconductors

MPSA06,126

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;

.5 A

80 V

SINGLE

100

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

.25 V

MPSA06,412 by NXP Semiconductors

MPSA06,412

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;

.5 A

80 V

SINGLE

100

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

.25 V

MPSA56,116 by NXP Semiconductors

MPSA56,116

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;

.5 A

80 V

SINGLE

50

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

50 MHz

.25 V

MPSA92,126 by NXP Semiconductors

MPSA92,126

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;

.5 A

6 pF

300 V

SINGLE

25

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

50 MHz

.5 V

PMST5401,115 by NXP Semiconductors

PMST5401,115

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .5 A;

.5 A

6 pF

150 V

SINGLE

50

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.2 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

SILICON

100 MHz

.5 V

PMST5401,135 by NXP Semiconductors

PMST5401,135

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .5 A;

.5 A

6 pF

150 V

SINGLE

50

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.2 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

SILICON

100 MHz

.5 V

MMBTA28-13-F by Diodes Incorporated

MMBTA28-13-F

Diodes Incorporated

NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY;

HIGH RELIABILITY

.5 A

DARLINGTON

10000

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

125 MHz

MMJT350T1 by Onsemi

MMJT350T1

Onsemi

MMJT350T1 by Onsemi is a PNP BJT transistor with 4 terminals, ideal for switching applications. It has a max power dissipation of 2.75W, hFE of 20, and can handle up to 300V collector-emitter voltage. The package style is small outline, making it suitable for surface mount designs in various electronic circuits.

COLLECTOR

.5 A

300 V

SINGLE

20

TO-261AA

R-PDSO-G4

e0

3

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

PNP

2.75 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

MMBTA06WT1 by Onsemi

MMBTA06WT1

Onsemi

MMBTA06WT1 by Onsemi is a NPN BJT transistor with 100 min hFE, suitable for amplifier applications. It has a max collector-emitter voltage of 80V and can handle up to 0.5A of current. With a package style of small outline, it is designed for surface mount assembly in electronic circuits.

.5 A

80 V

SINGLE

100

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

.15 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

30

AMPLIFIER

SILICON

100 MHz

MMBTA56WT1 by Onsemi

MMBTA56WT1

Onsemi

MMBTA56WT1 by Onsemi is a PNP BJT transistor with 3 terminals, suitable for amplifier applications. It has a max collector-emitter voltage of 80V, max collector current of 0.5A, and min DC current gain of 100. This surface-mount transistor operates up to 150 °C and has a transition frequency of 50MHz.

.5 A

80 V

SINGLE

100

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

PNP

.15 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

AMPLIFIER

SILICON

50 MHz

STPSA42 by STMicroelectronics

STPSA42

STMicroelectronics

STPSA42 by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max collector-emitter voltage of 300V, power dissipation of 0.625W, and operates up to 150 °C. Ideal for efficient circuit designs in various electronic devices.

.5 A

300 V

SINGLE

40

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

50 MHz

STPSA92 by STMicroelectronics

STPSA92

STMicroelectronics

STPSA92 by STMicroelectronics is a PNP small signal BJT designed for switching applications. It features a max collector-emitter voltage of 300V, power dissipation of 0.625W, and operates up to 150 °C. Ideal for efficient circuit designs with through-hole mounting.

.5 A

300 V

SINGLE

40

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

50 MHz

SS9013FBU by Fairchild Semiconductor

SS9013FBU

Fairchild Semiconductor

Fairchild Semiconductor SS9013FBU is a NPN BJT transistor with max. power dissipation of 0.625W, hFE of 96, and VCE of 20V. Ideal for amplifier applications due to its single configuration and cylindrical package style with through-hole terminals.

.5 A

20 V

SINGLE

96

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

MMBTA28-7 by Diodes Incorporated

MMBTA28-7

Diodes Incorporated

NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Collector Current (IC): .5 A; Maximum Collector-Emitter Voltage: 80 V;

.5 A

80 V

DARLINGTON

10000

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

125 MHz

MMBTA42-7 by Diodes Incorporated

MMBTA42-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): .5 A; JESD-609 Code: e0;

.5 A

300 V

SINGLE

40

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

50 MHz

MMBTA63-7 by Diodes Incorporated

MMBTA63-7

Diodes Incorporated

PNP; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Collector Current (IC): .5 A; Package Style (Meter): SMALL OUTLINE;

.5 A

30 V

DARLINGTON

10000

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

125 MHz

MMBTA64-7 by Diodes Incorporated

MMBTA64-7

Diodes Incorporated

PNP; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Collector Current (IC): .5 A; Terminal Position: DUAL;

.5 A

30 V

DARLINGTON

20000

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

125 MHz