Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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HN1B04F(TE85L,F)
Toshiba
NPN AND PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A; Maximum Operating Temperature: 150 Cel; Minimum DC Current Gain (hFE): 70;
.5 A
70
150 Cel
NPN AND PNP
.3 W
BIP General Purpose Small Signals
YES
MSB92AS1WT1G
Onsemi
MSB92AS1WT1G by Onsemi is a PNP BJT transistor with 300V VCEO, 0.5A IC, and 50MHz fT. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals. Operating up to 150 °C, it offers a min hFE of 25 and 0.15W power dissipation.
300 V
SINGLE
25
R-PDSO-G3
e3
1
3
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
NOT SPECIFIED
PNP
.15 W
Not Qualified
Other Transistors
Matte Tin (Sn) - annealed
GULL WING
DUAL
AMPLIFIER
SILICON
50 MHz
BC640-016G
BC640-016G by Onsemi is a PNP BJT with 3 terminals, max. power dissipation of 1.5W, and max. collector-emitter voltage of 80V. Ideal for applications requiring a min DC current gain of 25 (hFE), it operates at up to 150°C and has a nominal transition frequency of 150MHz.
80 V
TO-226AA
O-PBCY-T3
e1
ROUND
CYLINDRICAL
260
1.5 W
NO
TIN SILVER COPPER
THROUGH-HOLE
BOTTOM
150 MHz
2DA1971-13
Diodes Incorporated
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .5 A;
HIGH RELIABILITY
COLLECTOR
400 V
140
R-PSSO-F3
-55 Cel
AEC-Q101
MATTE TIN
FLAT
30
SWITCHING
75 MHz
2SAR502EBTL
ROHM
ROHM 2SAR502EBTL is a PNP BJT transistor with VCEsat of 0.4V, hFE of 200, and fT of 520MHz. Ideal for amplifier applications due to its small outline package style and max collector current of 0.5A. Suitable for surface mount designs with a rectangular package shape and flat terminal form.
4 pF
30 V
200
R-PDSO-F3
.2 W
TIN
10
520 MHz
.4 V
BCV46QTA
PNP; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .5 A;
60 V
DARLINGTON
2000
.35 W
200 MHz
BCR523UE6327HTSA1
Infineon Technologies
Infineon's BCR523UE6327HTSA1 is a NPN BJT with 2 elements, built-in resistor, and hFE of 70. Ideal for switching applications, it has a max operating temp of 150°C, VCE of 50V, and IC of 0.5A. With a fT of 100MHz, this transistor in small outline package suits high-frequency needs.
BUILT-IN BIAS RESISTOR RATIO IS 10
50 V
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
R-PDSO-G6
2
6
NPN
100 MHz
BCR523UE6433HTMA1
NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Qualification: Not Qualified;
BCV48E6327HTSA1
PNP; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .5 A; Transistor Element Material: SILICON;
BCV26E6327HTSA1
BCV26E6327HTSA1 by Infineon Technologies is a PNP Darlington transistor with a min DC current gain of 4000 and max collector-emitter voltage of 30V. It operates at up to 150°C, making it suitable for high-temperature applications in small outline packages. With a nominal transition frequency of 200MHz, it is ideal for high-frequency amplification needs.
4000
BCV27E6327HTSA1
BCV27E6327HTSA1 by Infineon Technologies is a NPN Darlington transistor with 4000 min hFE, 30V VCEO, and 170MHz fT. Ideal for small signal applications in electronics due to its high DC current gain and low power dissipation of 0.36W. Suitable for surface mount designs with a compact rectangular package style.
.36 W
170 MHz
BCP49E6327HTSA1
NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .5 A; Maximum Operating Temperature: 150 Cel;
R-PDSO-G4
4
SMBTA06UPNE6327HTSA1
SMBTA06UPNE6327HTSA1 by Infineon Technologies is a Small Signal BJT with NPN and PNP configuration, 2 elements, and Gull Wing terminals. It operates up to 150°C with a max voltage of 80V and max current of 0.5A. Ideal for applications requiring high DC gain (hFE), such as amplification in small outline packages.
SEPARATE, 2 ELEMENTS
100
PZTA42E6327HTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 70 MHz; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY;
40
70 MHz
SMBTA06E6327HTSA1
Infineon Technologies' SMBTA06E6327HTSA1 is a NPN BJT transistor with hFE of 100, VCE of 80V, and IC of 0.5A. Ideal for amplifier applications, it operates up to 150°C with a transition frequency of 100MHz. This surface-mount device in a small outline package suits compact designs.
BCR521E6327HTSA1
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; No. of Terminals: 3;
BUILT-IN BIAS RESISTOR RATIO IS 1
SINGLE WITH BUILT-IN RESISTOR
20
BCV29E6327HTSA1
NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .5 A; No. of Elements: 1;
BCV47E6433HTMA1
BCV47E6433HTMA1 by Infineon is a NPN Darlington BJT with 2000 hFE, 60V VCE, and 170MHz fT. Ideal for applications requiring high current gain and voltage amplification in compact electronic devices due to its small outline package and surface mount capability.
SMBTA06E6433HTMA1
SMBTA06E6433HTMA1 by Infineon is a NPN BJT transistor with max. collector-emitter voltage of 80V, ideal for amplifier applications. Featuring a min. DC current gain of 100 and max. operating temp of 150°C, it has a small outline package style suitable for surface mount assembly with Gull Wing terminals.
BCV49E6327HTSA1
NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .5 A; Transistor Element Material: SILICON;
2N2907AUB1
STMicroelectronics
2N2907AUB1 by STMicroelectronics is a PNP BJT transistor for switching applications. With hFE of 50, Vce of 60V, and Ic of 0.5A, it offers fast ton of 45ns and toff of 300ns. This SMD transistor in small outline package is ideal for compact electronic designs.
50
R-XDSO-N3
e4
UNSPECIFIED
Gold (Au)
NO LEAD
300 ns
45 ns
BC817K25E6327HTSA1
BC817K25E6327HTSA1 by Infineon is a NPN BJT transistor with hFE of 160, VCE of 45V, and IC of 0.5A. Ideal for amplifier applications due to its high transition frequency of 170MHz. It comes in a small outline package with gull wing terminals for surface mount assembly.
45 V
160
BC818K16WH6327XTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): .5 A; Terminal Form: GULL WING;
25 V
BC818K40E6327HTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): .5 A; No. of Elements: 1;
250
BCR573E6327HTSA1
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .5 A; Additional Features: BUILT-IN BIAS RESISTOR RATIO 0.1;
BUILT-IN BIAS RESISTOR RATIO 0.1
DTD143ECT216
ROHM DTD143ECT216 is a NPN BJT with VCEsat of 0.3V, hFE of 47, and IC of 0.5A. Ideal for switching applications, it has a max operating temp of 150°C and fT of 200MHz. Package: PLASTIC/EPOXY, RECTANGULAR shape with GULL WING terminals in SMALL OUTLINE style.
47
Tin/Silver/Copper (Sn/Ag/Cu)
.3 V
ZTX758STOB
Zetex Plc
ZTX758STOB by Zetex Plc is a PNP BJT transistor for switching applications. With VCEsat of 0.5V, hFE of 40, and IC of 0.5A, it operates at up to 200°C. Its package style is in-line with 3 wire terminals, making it suitable for high-temperature switching circuits.
R-PSIP-W3
200 Cel
IN-LINE
WIRE
.5 V
ZTX795ASTOA
ZTX795ASTOA by Zetex Plc is a PNP BJT transistor for switching applications. With VCEsat of 0.3V, hFE of 100, and IC of 0.5A, it operates at up to 200°C. Its silicon element and matte tin finish make it suitable for high-temperature environments requiring fast switching speeds up to 100MHz.
140 V
BC807-16-7
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .5 A;
12 pF
60
e0
.31 W
TIN LEAD
.7 V
BC807-25-7
BC807-40-7
170
2SC1741ASTPQ
ROHM 2SC1741ASTPQ is a NPN BJT transistor with max. power dissipation of 0.3W, hFE of 120, and fT of 250MHz. Ideal for switching applications due to its max. collector-emitter voltage of 50V and max. collector current of 0.5A in a through-hole package style.
120
R-PSIP-T3
250 MHz
IMZ4T108
ROHM's IMZ4T108 is a Small Signal BJT with NPN and PNP types, 2 separate elements, and Gull Wing terminals. It has a max power dissipation of 0.3W, hFE of 120, and can handle up to 32V collector-emitter voltage. Ideal for applications requiring high transition frequency (fT) of 250MHz in small outline packages.
32 V
BIP General Purpose Small Signal
ULQ2003ADR
Texas Instruments
ULQ2003ADR by Texas Instruments is a NPN BJT transistor with 7 elements and 16 terminals. It has a max collector-emitter voltage of 50V and collector current of 0.5A, suitable for switching applications. The package is surface mountable with Gull Wing terminals in a small outline shape.
LOGIC LEVEL COMPATIBLE
COMPLEX
MS-012AC
R-PDSO-G16
7
16
Nickel/Palladium/Gold (Ni/Pd/Au)
2N3859AD75Z
Fairchild Semiconductor
2N3859AD75Z by Fairchild Semiconductor is a NPN bipolar junction transistor with a max collector-emitter voltage of 60V and a max collector current of 0.5A. It has a min DC current gain of 100, making it suitable for switching applications. With a nominal transition frequency of 90MHz, this transistor is ideal for high-frequency operations in various electronic circuits.
TO-92
Matte Tin (Sn)
90 MHz
PN4249D74Z
Fairchild Semiconductor's PN4249D74Z is a PNP BJT transistor with 3 terminals. It has a max power dissipation of 0.6W and can handle up to 0.5A collector current. Ideal for switching applications, it operates at temperatures up to 150°C in a round package with matte tin finish.
.6 W
DTD143TKT146
ROHM DTD143TKT146 is a NPN BJT transistor with VCEsat of 0.3V, hFE of 100, and IC of 0.5A. Ideal for switching applications in small outline packages with built-in resistor. Operates at max temp of 150°C and transition frequency of 200MHz.
BUILT-IN BIAS RESISTOR
40 V
2SA1727TLQ
ROHM 2SA1727TLQ is a PNP BJT transistor with max. collector-emitter voltage of 400V and max. power dissipation of 10W. With hFE of min. 120, it's ideal for switching applications in small outline packages at up to 150°C operating temperature.
R-PSSO-G2
e2
10 W
Tin/Copper (Sn98Cu2)
12 MHz
2SD2144STPW
ROHM 2SD2144STPW is a NPN BJT transistor with max. power dissipation of 0.3W and min. DC current gain of 1200, ideal for low-power applications. With a max. collector-emitter voltage of 20V and max. collector current of 0.5A, it operates up to 150°C making it suitable for various electronic circuits requiring high frequency operation up to 350MHz in an in-line package style.
20 V
1200
350 MHz
2SD1757KT146R
ROHM 2SD1757KT146R is a NPN BJT transistor with max. collector-emitter voltage of 15V, ideal for switching applications. Features include min. DC current gain of 180 and max. operating temp of 150°C. Its small outline package with gull wing terminals makes it suitable for surface mount designs in various electronic circuits.
15 V
180
MMSTA06T146
ROHM MMSTA06T146 is a NPN BJT transistor with VCEsat of 0.25V, hFE of 100, and IC of 0.5A. Ideal for amplifier applications due to its small outline package style and high transition frequency of 100MHz. Features gull wing terminals in a plastic/epoxy body for surface mount assembly.
.25 V
UML6NTR
ROHM's UML6NTR is a NPN BJT with built-in diode for switching applications. It has 5 terminals, max power dissipation of 0.12W, and max collector current of 0.5A. With a transition frequency of 320MHz, it operates at up to 150°C and has a max collector-emitter voltage of 12V.
12 V
SINGLE WITH BUILT-IN DIODE
270
R-PDSO-G5
5
.12 W
TIN COPPER
320 MHz
UMF6NTR
ROHM's UMF6NTR is a PNP BJT transistor with 270 min hFE, 260 MHz fT, and 0.5 A IC. Ideal for switching applications, it has a max operating temperature of 150°C and a package style of small outline.
BUILT IN 2SA2018 AND 2SK3019
SINGLE WITH BUILT-IN FET AND DIODE
260 MHz
HBDM60V600W-7
Diodes Inc.'s HBDM60V600W-7 is a Small Signal BJT with NPN and PNP types. It has 2 elements, 6 terminals, and can handle up to 0.5A collector current at 65V. With a transition frequency of 100MHz, it's ideal for high-frequency applications in electronics requiring small outline packages.
65 V
ULN2004ADG4
ULN2004ADG4 by Texas Instruments is a NPN BJT with 7 elements, 0.5A IC, and 50V VCE. It is used for switching applications in surface mount designs due to its GULL WING terminals and small outline package style. The transistor's silicon material and complex configuration make it suitable for various electronic projects.
PMEM1505NG,115
NXP Semiconductors
NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 420 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .5 A;
90
.8 W
420 MHz
PMEM1505PG,115
PNP; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 280 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
280 MHz
IMT17-7
PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
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