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.5 A Small Signal Bipolar Junction Transistors (BJT) 327

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
FMMT614QTC by Diodes Incorporated

FMMT614QTC

Diodes Incorporated

NPN; Configuration: DARLINGTON; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Terminal Finish: MATTE TIN; Terminal Form: GULL WING;

HIGH RELIABILITY

.5 A

100 V

DARLINGTON

5000

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

BC808-40B6327 by Infineon Technologies

BC808-40B6327

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .5 A; Peak Reflow Temperature (C): NOT SPECIFIED;

.5 A

25 V

SINGLE

250

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

200 MHz

BC817K-25WH6433 by Infineon Technologies

BC817K-25WH6433

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 160;

.5 A

45 V

SINGLE

160

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

170 MHz

BCP49H6359XTMA1 by Infineon Technologies

BCP49H6359XTMA1

Infineon Technologies

NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .5 A; Terminal Form: GULL WING;

COLLECTOR

.5 A

60 V

DARLINGTON

2000

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

200 MHz

BCV27-TP by Micro Commercial Components

BCV27-TP

Micro Commercial Components

BCV27-TP by Micro Commercial Components is a Small Signal BJT with hFE of 4000, VCEO of 30V, and IC of 0.5A. It is commonly used in applications requiring high DC current gain and low collector-emitter voltage.

.5 A

30 V

4000

e3

1

260

MATTE TIN

10

SDBN500B01-7 by Diodes Incorporated

SDBN500B01-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .5 A;

.5 A

SINGLE

60

e3

1

1

150 Cel

260

NPN

.2 W

Other Transistors

YES

MATTE TIN

30

100 MHz

BA12003DF-ZE2 by ROHM

BA12003DF-ZE2

ROHM

ROHM's BA12003DF-ZE2 is a NPN BJT transistor with 1000 min hFE, 60V max VCE, and 0.5A max IC. Ideal for switching applications in small outline packages, featuring GULL WING terminals and SILICON material.

.5 A

60 V

COMPLEX

1000

R-PDSO-G16

7

16

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

SMMJT350T3G by Onsemi

SMMJT350T3G

Onsemi

SMMJT350T3G by Onsemi is a PNP BJT transistor with 300V VCEO, 0.5A IC, and 2.75W power dissipation suitable for switching applications. It comes in a small outline package with Gull Wing terminals, operating b/w -55 °C to 150°C. Ideal for automotive electronics due to AEC-Q101 compliance.

COLLECTOR

.5 A

300 V

SINGLE

20

TO-261AA

R-PDSO-G4

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

2.75 W

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

PBHV8515QA,147 by Nexperia

PBHV8515QA,147

Nexperia

Nexperia's PBHV8515QA,147 is a NPN BJT transistor with max. Vce of 150V and Ic of 0.5A. With hFE of 35 and fT of 75MHz, it's ideal for switching applications in automotive electronics due to AEC-Q101 compliance.

COLLECTOR

.5 A

150 V

SINGLE

35

R-PDSO-N3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

75 MHz

PDTB113EU,135 by NXP Semiconductors

PDTB113EU,135

NXP Semiconductors

NXP Semiconductors' PDTB113EU,135 is a PNP BJT with built-in resistor for switching applications. Features include hFE of 33, VCE of 50V, and fT of 140MHz. This small outline transistor has Gull Wing terminals and meets AEC-Q101 and IEC-60134 standards.

BUILT IN BIAS RESISTANCE RATIO IS 1

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

33

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

140 MHz

PDTB113ZU,135 by NXP Semiconductors

PDTB113ZU,135

NXP Semiconductors

NXP Semiconductors' PDTB113ZU,135 is a PNP BJT with built-in resistor for switching applications. Features include 50V VCE, 0.5A IC, and 140MHz fT. This small outline transistor has Gull Wing terminals and meets AEC-Q101 and IEC-60134 standards.

BUILT IN BIAS RESISTANCE RATIO IS 10

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

140 MHz

PDTB123EU,135 by NXP Semiconductors

PDTB123EU,135

NXP Semiconductors

The NXP Semiconductors PDTB123EU,135 is a PNP BJT with built-in resistor for switching applications. It has a hFE of 40, Vce of 50V, and fT of 140MHz. This small outline transistor features gull wing terminals in a rectangular package suitable for surface mount assembly.

BUILT IN BIAS RESISTANCE RATIO IS 1

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

40

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

140 MHz

PDTB123YU,135 by NXP Semiconductors

PDTB123YU,135

NXP Semiconductors

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Collector Current (IC): .5 A; No. of Elements: 1;

BUILT IN BIAS RESISTANCE RATIO IS 4.55

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

140 MHz

PDTB143ET,215 by NXP Semiconductors

PDTB143ET,215

NXP Semiconductors

NXP Semiconductors' PDTB143ET,215 is a PNP BJT with built-in resistor for switching applications. Features include hFE of 60, VCE of 50V, and fT of 140MHz. This small outline transistor has Gull Wing terminals in a rectangular package.

BUILT IN BIAS RESISTOR RATIO IS 1

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

60

TO-236AB

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

140 MHz

PDTB143XQA,147 by Nexperia

PDTB143XQA,147

Nexperia

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .5 A; No. of Terminals: 3;

BUILT IN BIAS RESISTANCE RATIO IS 2.13

COLLECTOR

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-N3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

150 MHz

PDTD114EQA,147 by Nexperia

PDTD114EQA,147

Nexperia

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 210 MHz; Maximum Collector Current (IC): .5 A; Transistor Element Material: SILICON;

BUILT IN BIAS RESISTANCE RATIO IS 1

COLLECTOR

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-N3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

210 MHz

PDTD114EU,135 by NXP Semiconductors

PDTD114EU,135

NXP Semiconductors

NXP Semiconductors PDTD114EU,135 is a NPN BJT transistor with built-in resistor for switching applications. It features hFE of 70, VCE of 50V, and fT of 225MHz. This small outline package with gull wing terminals is ideal for surface mount designs in automotive and industrial electronics.

BUILT IN BIAS RESISTANCE RATIO IS 1

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

225 MHz

PDTD123EU,135 by NXP Semiconductors

PDTD123EU,135

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 225 MHz; Maximum Collector Current (IC): .5 A; Maximum Collector-Emitter Voltage: 50 V;

BUILT IN BIAS RESISTANCE RATIO IS 1

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

40

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

225 MHz

AS9013-H-HF by Comchip Technology

AS9013-H-HF

Comchip Technology

Comchip Technology's AS9013-H-HF is a NPN BJT transistor with VCEsat of 0.6V, hFE of 200, and IC of 0.5A. Ideal for small signal applications in automotive electronics due to AEC-Q101 certification and 150MHz fT. Package: PLASTIC/EPOXY, GULL WING terminals, suitable for surface mount assembly.

.5 A

25 V

SINGLE

200

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.3 W

.3 W

AEC-Q101

YES

GULL WING

DUAL

SILICON

150 MHz

.6 V

AS9013-L-HF by Comchip Technology

AS9013-L-HF

Comchip Technology

Comchip Technology's AS9013-L-HF is a NPN BJT transistor with VCEsat of 0.6V, hFE of 120, and IC of 0.5A. Ideal for small signal applications in automotive electronics due to AEC-Q101 certification and high transition frequency of 150MHz.

.5 A

25 V

SINGLE

120

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.3 W

.3 W

AEC-Q101

YES

GULL WING

DUAL

SILICON

150 MHz

.6 V

AS9013-J-HF by Comchip Technology

AS9013-J-HF

Comchip Technology

Comchip Technology's AS9013-J-HF is a NPN BJT with VCEsat of 0.6V, hFE of 300, and IC of 0.5A. Ideal for small signal applications in automotive electronics due to AEC-Q101 certification and 150MHz fT.

.5 A

25 V

SINGLE

300

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.3 W

.3 W

AEC-Q101

YES

GULL WING

DUAL

SILICON

150 MHz

.6 V

MMBT6427LT3G by Onsemi

MMBT6427LT3G

Onsemi

MMBT6427LT3G by Onsemi is a NPN Darlington transistor with max VCEsat of 1.5V, hFE of 14000, and IC of 0.5A. Ideal for small signal applications in electronics due to its high gain and low saturation voltage. Operates b/w -55 to 150 °C, making it suitable for various temperature environments.

.5 A

7 pF

40 V

DARLINGTON

14000

TO-236

R-PDSO-G3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.3 W

YES

GULL WING

DUAL

SILICON

1.5 V

BC817-16-QVL by Nexperia

BC817-16-QVL

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .345 W; Maximum Collector Current (IC): .5 A;

.5 A

3 pF

45 V

SINGLE

100

TO-236AB

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.345 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.7 V

BC817-QVL by Nexperia

BC817-QVL

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .345 W; Maximum Collector Current (IC): .5 A;

.5 A

3 pF

45 V

SINGLE

100

TO-236AB

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.345 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.7 V

PBSS2515YPN-QX by Nexperia

PBSS2515YPN-QX

Nexperia

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 420 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;

.5 A

6 pF

15 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

420 MHz

.25 V

BC807W-QF by Nexperia

BC807W-QF

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .29 W; Maximum Collector Current (IC): .5 A;

.5 A

5 pF

45 V

SINGLE

100

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.29 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

80 MHz

.7 V

BC817-16W-QF by Nexperia

BC817-16W-QF

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .29 W; Maximum Collector Current (IC): .5 A;

.5 A

3 pF

45 V

SINGLE

100

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.29 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.7 V

BC817-40W-QF by Nexperia

BC817-40W-QF

Nexperia

BC817-40W-QF by Nexperia is a NPN BJT transistor for switching applications. With VCEsat of 0.7V, hFE of 250, and IC of 0.5A, it operates at temperatures from -65 to 150°C. This small outline package with Gull Wing terminals has a max fT of 100MHz and is ideal for AEC-Q101 automotive standards.

.5 A

3 pF

45 V

SINGLE

250

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.29 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.7 V

BC807-16W-QF by Nexperia

BC807-16W-QF

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .29 W; Maximum Collector Current (IC): .5 A;

.5 A

5 pF

45 V

SINGLE

100

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.29 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

80 MHz

.7 V

BC817-25W-QF by Nexperia

BC817-25W-QF

Nexperia

Nexperia's BC817-25W-QF is a NPN BJT transistor for switching applications. With VCEsat of 0.7V, hFE of 160, and IC of 0.5A, it operates up to 150°C. Its small outline package with Gull Wing terminals makes it suitable for surface mount designs in automotive electronics meeting AEC-Q101 standards.

.5 A

3 pF

45 V

SINGLE

160

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.29 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.7 V

BC817W-QF by Nexperia

BC817W-QF

Nexperia

BC817W-QF by Nexperia is a NPN transistor for switching applications. With a VCEsat of 0.7V, it has a max IC of 0.5A and hFE of 100. Operating temperature ranges from -65 to 150°C, making it suitable for various electronic devices.

.5 A

3 pF

45 V

SINGLE

100

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.29 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.7 V

BC817-16W-QX by Nexperia

BC817-16W-QX

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .29 W; Maximum Collector Current (IC): .5 A;

.5 A

3 pF

45 V

SINGLE

100

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.29 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.7 V

BC807-40W-QF by Nexperia

BC807-40W-QF

Nexperia

BC807-40W-QF by Nexperia is a PNP BJT for switching applications. Features include VCEsat of 0.7V, hFE of 250, and IC of 0.5A. With a max temp of 150°C, it has a fT of 80MHz. Ideal for small outline packages in automotive electronics.

.5 A

5 pF

45 V

SINGLE

250

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.29 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

80 MHz

.7 V

PMBTA06-QVL by Nexperia

PMBTA06-QVL

Nexperia

Nexperia's PMBTA06-QVL is a NPN BJT transistor for switching applications. Features include VCEsat of 0.25V, hFE of 100, and IC of 0.5A. With a max operating temp of 150°C, it's ideal for automotive electronics meeting AEC-Q101 standards.

.5 A

80 V

SINGLE

100

TO-236AB

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.25 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.25 V

BC807-QR by Nexperia

BC807-QR

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .345 W; Maximum Collector Current (IC): .5 A;

.5 A

45 V

SINGLE

100

TO-236AB

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.345 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

80 MHz

.7 V

BC807-16-QR by Nexperia

BC807-16-QR

Nexperia

BC807-16-QR by Nexperia is a PNP BJT for switching applications. Features include VCEsat of 0.7V, hFE of 100, and IC of 0.5A. Suitable for small outline packages, with max operating temp of 150°C.

.5 A

45 V

SINGLE

100

TO-236AB

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.345 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

80 MHz

.7 V

BC807-25-QVL by Nexperia

BC807-25-QVL

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .345 W; Maximum Collector Current (IC): .5 A;

.5 A

45 V

SINGLE

160

TO-236AB

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.345 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

80 MHz

.7 V

BC807-16-QVL by Nexperia

BC807-16-QVL

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .345 W; Maximum Collector Current (IC): .5 A;

.5 A

45 V

SINGLE

100

TO-236AB

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.345 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

80 MHz

.7 V

2SC2859-Y(TE85L,F) by Toshiba

2SC2859-Y(TE85L,F)

Toshiba

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .5 A;

.5 A

7 pF

30 V

SINGLE

40

R-PDSO-G3

1

3

125 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.15 W

.15 W

YES

GULL WING

DUAL

SWITCHING

SILICON

300 MHz

.25 V