Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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MPSA92RL1G
Onsemi
MPSA92RL1G by Onsemi is a PNP BJT with 300V VCEO, 0.5A IC, and 50MHz fT. Ideal for low-power applications requiring high DC current gain and operating temperatures from -55 to 150 °C. Package style: Cylindrical, terminals: Through-hole, suitable for various electronic designs.
.5 A
300 V
SINGLE
25
TO-92
O-PBCY-T3
e1
1
3
150 Cel
-55 Cel
PLASTIC/EPOXY
ROUND
CYLINDRICAL
260
PNP
1.5 W
Not Qualified
Other Transistors
NO
TIN SILVER COPPER
THROUGH-HOLE
BOTTOM
SILICON
50 MHz
MPSA92ZL1G
MPSA92ZL1G by Onsemi is a PNP BJT with 300V VCEO, 0.5A IC, and 50MHz fT. Ideal for small signal applications in electronics due to its high DC current gain and low power dissipation of 1.5W. The through-hole package with bottom terminal position makes it easy to integrate into circuit designs.
MPSA93G
MPSA93G by Onsemi is a PNP BJT with 200V VCEO, 0.5A IC, and 1.5W power dissipation. Ideal for low-power applications, it has a min hFE of 25 and operates up to 150 °C. Commonly used in signal amplification circuits due to its high transition frequency of 50MHz.
200 V
MPSA93RLRMG
MPSA93RLRMG by Onsemi is a PNP BJT with 200V VCEO, 0.5A IC, and 1.5W power dissipation. Ideal for small signal applications in electronics due to its hFE of 25, fT of 50MHz, and operating temperature up to 150 °C. Package style is cylindrical with through-hole terminals.
2N6426RLRAG
2N6426RLRAG by Onsemi is a NPN Darlington transistor with max. collector-emitter voltage of 40V and max. collector current of 0.5A. It has a min. DC current gain of 20,000 and nominal transition frequency of 125MHz, making it ideal for amplifier applications due to its high power dissipation capability of 0.625W.
40 V
DARLINGTON
20000
NPN
.625 W
AMPLIFIER
125 MHz
2N6427G
NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 130 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;
14000
130 MHz
2N6515RLRMG
2N6515RLRMG by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 250V, ideal for switching applications. It has a min. DC current gain of 25 and max. operating temp of 150 °C, making it suitable for high-power dissipation up to 0.625W in cylindrical package style.
250 V
SWITCHING
40 MHz
3500 ns
200 ns
2N6517G
2N6517G by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 350V and max. collector current of 0.5A. It has a min. DC current gain of 15, making it suitable for switching applications with a max. power dissipation of 0.625W. The transistor operates at up to 150 °C and has a nominal transition frequency of 40MHz, ideal for high-speed switching circuits.
350 V
15
2N6517RLRAG
2N6517RLRAG by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 350V, max. collector current of 0.5A, and min. DC current gain of 15. It is used for switching applications due to its single configuration and cylindrical package style, operating at a max temp of 150 °C.
2N6517RLRPG
2N6517RLRPG by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 350V, ideal for switching applications. It has a min. DC current gain of 15 and max. operating temp. of 150 °C, making it suitable for high-power dissipation up to 0.625W in cylindrical package style.
BC489G
BC489G by Onsemi is a NPN BJT transistor with max. power dissipation of 0.625W, hFE of 15, and max. operating temp of 150 °C. Ideal for switching applications due to its max. collector-emitter voltage of 80V and max. collector current of 0.5A in a cylindrical package style suitable for through-hole mounting.
80 V
200 MHz
BC638G
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .5 A;
60 V
40
Tin/Silver/Copper (Sn/Ag/Cu)
150 MHz
BC640G
BC640G by Onsemi is a PNP BJT with 3 terminals, max. power dissipation of 1.5W, and hFE of 40. Ideal for applications requiring a max. collector-emitter voltage of 80V, such as amplifiers or signal processing circuits due to its high transition frequency of 150MHz.
BCX17LT3G
BCX17LT3G by Onsemi is a PNP BJT transistor with 45V VCEO, 0.5A IC, and 150 °C max temp. Ideal for small signal applications in electronics due to its compact SOT package and high DC current gain of 40 (hFE). Suitable for surface mount PCB designs requiring low power dissipation.
45 V
TO-236AB
R-PDSO-G3
e3
RECTANGULAR
SMALL OUTLINE
.3 W
YES
TIN
GULL WING
DUAL
BDC01DRL1G
BDC01DRL1G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 1W, hFE of 25, and VCEO of 100V. With a package style of cylindrical and operating temp up to 150 °C, it offers high performance in various electronic circuits.
EUROPEAN PART NUMBER
100 V
1 W
BF393G
BF393G by Onsemi is a NPN BJT with 300V VCEO, 0.5A IC, and 50MHz fT. Ideal for low-power applications requiring high DC current gain and operating up to 150 °C. Package: PLASTIC/EPOXY, CYLINDRICAL shape with THROUGH-HOLE terminals.
BF493SG
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;
MMBT6520LT3G
MMBT6520LT3G by Onsemi is a PNP BJT transistor with 350V VCEO, 0.5A IC, and 40MHz fT. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mount assembly. With a max operating temp of 150 °C, it offers a min hFE of 15 and 0.225W power dissipation.
.225 W
30
MMBTA43LT1G
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .5 A;
MMBTA93LT1G
MMBTA93LT1G by Onsemi is a PNP BJT transistor with 200V VCEO, 0.5A IC, and 50MHz fT. Ideal for small signal applications in electronics due to its high transition frequency and low power dissipation of 0.3W. Its GULL WING terminals and compact SMALL OUTLINE package make it suitable for surface mount designs.
TO-236
MPS3638AG
MPS3638AG by Onsemi is a PNP BJT transistor with 3 terminals, max power dissipation of 0.625W, and hFE of 20. Ideal for switching applications due to its max collector-emitter voltage of 25V and fast turn-on/off times. With a nominal transition frequency of 150MHz, it offers efficient performance in various electronic circuits.
25 V
20
170 ns
75 ns
MPS6560G
MPS6560G by Onsemi is a NPN BJT transistor with 3 terminals and 0.625W power dissipation. Ideal for amplifier applications, it has a max collector-emitter voltage of 25V, hFE of 50, and operates up to 150 °C.
50
60 MHz
MPS6729G
MPS6729G by Onsemi is a PNP BJT transistor with 3 terminals, max. power dissipation of 1W, and max. collector-emitter voltage of 80V. Ideal for amplifier applications due to its single configuration and silicon element material, operating at up to 150 °C with a min DC current gain of 50 (hFE).
MPS8098G
MPS8098G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.625W, max collector-emitter voltage of 60V, and min DC current gain of 75. This through-hole transistor operates up to 150°C and has a nominal transition frequency of 150MHz.
75
MPS8098RLRAG
MPS8098RLRAG by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It offers a max power dissipation of 0.625W, hFE of 75, and max operating temp of 150 °C. With a max collector-emitter voltage of 60V and max collector current of 0.5A, it's suitable for various electronic circuits.
MPS8099G
MPS8099G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.625W, hFE of 75, and can handle up to 80V collector-emitter voltage. With a transition frequency of 150MHz and operating temp of 150°C, it's suitable for various electronic circuits requiring high-speed switching capabilities.
MPS8099RLRAG
MPS8099RLRAG by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.625W, hFE of 75, and fT of 150MHz. With a max operating temp of 150°C and VCE of 80V, it's suitable for various electronic circuits.
MPS8099RLRMG
MPS8099RLRMG by Onsemi is a NPN BJT transistor with 3 terminals and 0.5A max collector current. With hFE of 75, it's ideal for amplifier applications. Operating at up to 150 °C, it has a max power dissipation of 0.625W in a cylindrical package.
MPS8099RLRPG
MPS8099RLRPG by Onsemi is a NPN BJT transistor with 3 terminals and max. power dissipation of 0.625W. With hFE of 75, it operates up to 150°C and handles max. collector-emitter voltage of 80V. Ideal for amplifier applications due to its nominal transition frequency of 150MHz in a cylindrical package style.
MPS8598RLRAG
MPS8598RLRAG by Onsemi is a PNP BJT transistor with 3 terminals, max. power dissipation of 0.625W, and min. DC current gain of 75. It is used in amplifier applications due to its max. collector-emitter voltage of 60V and nominal transition frequency of 150MHz.
MPS8599G
MPS8599G by Onsemi is a PNP BJT transistor with 3 terminals, max. power dissipation of 0.625W, and min. DC current gain of 75. It is used in amplifier applications due to its max. collector-emitter voltage of 80V and nominal transition frequency of 150MHz.
MPSA05RLRAG
MPSA05RLRAG by Onsemi is a NPN BJT transistor with 3 terminals and max. power dissipation of 0.625W. It has a min. DC current gain of 100, max. operating temp of 150 °C, and max. collector-emitter voltage of 60V. Ideal for amplifier applications due to its SILICON element material and cylindrical package style.
100
100 MHz
MPSA06RLG
MPSA06RLG by Onsemi is a NPN BJT transistor with max. power dissipation of 0.625W, hFE of 100, and max. collector-emitter voltage of 80V. Ideal for amplifier applications due to its high transition frequency of 100MHz and max. operating temp. of 150 °C in a cylindrical package style.
MPSA27RLRAG
MPSA27RLRAG by Onsemi is a NPN Darlington transistor with hFE of 10000, VCEO of 60V, and IC of 0.5A. Ideal for amplifier applications, it operates up to 150 °C and has an fT of 125MHz. The package is cylindrical with through-hole terminals made of tin silver copper.
10000
MPSA28G
MPSA28G by Onsemi is a NPN Darlington BJT with hFE of 10000, IC of 0.5A, and fT of 200MHz. Ideal for applications requiring high current gain and frequency response in through-hole configurations.
MPSA29G
MPSA29G by Onsemi is a NPN Darlington BJT with hFE of 10000, VCEO of 100V, and IC of 0.5A. Ideal for amplifier applications due to its high gain and temperature range up to 150 °C. Its cylindrical package with through-hole terminals makes it suitable for various electronic designs.
MPSA56RLRPG
MPSA56RLRPG by Onsemi is a PNP BJT with max. collector-emitter voltage of 80V, max. collector current of 0.5A, and min. DC current gain of 100. Ideal for amplifier applications due to its high transition frequency of 50MHz and max. power dissipation of 0.625W in a cylindrical package style.
MPSA56ZL1G
MPSA56ZL1G by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 80V and max. collector current of 0.5A, ideal for amplifier applications. It has a min. DC current gain of 100, operates up to 150 °C, and features a cylindrical package style for through-hole mounting.
MPSA75RLRAG
MPSA75RLRAG by Onsemi is a PNP Darlington BJT transistor with hFE of 10000, VCEO of 40V, and IC of 0.5A. Ideal for amplifier applications due to its high gain and temperature range up to 150 °C. Packaged in cylindrical shape with through-hole terminals for easy installation.
MPSA77RLRAG
MPSA77RLRAG by Onsemi is a PNP Darlington BJT transistor with hFE of 10000, VCEO of 60V, and IC of 0.5A. Ideal for amplifier applications due to its high gain and operating temperature up to 150 °C. Its cylindrical package with through-hole terminals makes it suitable for various electronic designs.
MPSW05G
The Onsemi MPSW05G is a NPN BJT transistor with 60V VCEO, 0.5A IC, and 1W Ptot. Ideal for amplifier applications due to its hFE of 60 and fT of 50MHz. Packaged in a cylindrical shape with through-hole terminals for easy installation.
60
TO-226
MPSW63G
MPSW63G by Onsemi is a PNP BJT with 1W power dissipation, hFE of 10000, and IC of 0.5A. Ideal for applications requiring high DC current gain like amplifiers or signal processing circuits due to its Darlington configuration and SILICON material.
MPSW63RLRAG
MPSW63RLRAG by Onsemi is a PNP Darlington BJT with 3 terminals. It features a max power dissipation of 1W, hFE of 10000, and fT of 125MHz. Ideal for applications requiring high current gain and frequency amplification in electronic circuits.
SN75468DE4
Texas Instruments
SN75468DE4 by Texas Instruments is a NPN BJT transistor with VCEsat of 1.6V, IC of 0.5A, and VCEO of 100V. It is used for switching applications in surface mount designs due to its small outline package style and Gull Wing terminals.
LOGIC LEVEL COMPATIBLE
COMPLEX
MS-012AC
R-PDSO-G16
e4
7
16
70 Cel
0 Cel
NICKEL PALLADIUM GOLD
1.6 V
ULN2003AINE4
ULN2003AINE4 by Texas Instruments is a NPN BJT transistor with 7 elements and 16 terminals. It has a max collector-emitter voltage of 50V and max collector current of 0.5A, making it ideal for switching applications. The package style is in-line with terminal finish Ni/Pd/Au, suitable for through-hole mounting.
50 V
MS-001BB
R-PDIP-T16
IN-LINE
NOT SPECIFIED
Nickel/Palladium/Gold (Ni/Pd/Au)
DRDN005W-7
Diodes Incorporated
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Peak Reflow Temperature (C): 260;
R-PDSO-G6
6
MATTE TIN
BC487BG
BC487BG by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 60V, ideal for switching applications. It has a min. DC current gain of 160 and max. power dissipation of 0.625W, suitable for high-frequency operations up to 200MHz in cylindrical package style.
160
BC487G
BC487G by Onsemi is a NPN BJT transistor with hFE of 60, Vce of 60V, and fT of 200MHz. It is used for switching applications in electronics due to its single configuration and max collector current of 0.5A. The transistor comes in a cylindrical package with through-hole terminals made of silicon material.
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