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BDC01DRL1G

Onsemi

BDC01DRL1G by Onsemi

BDC01DRL1G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 1W, hFE of 25, and VCEO of 100V. With a package style of cylindrical and operating temp up to 150 °C, it offers high performance in various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,943 parts In-Stock

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Digiode

USA . 2,202 parts In-Stock

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AZTECH Wire

Italy . 1,202 parts In-Stock

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$8.980

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Component Stockers USA

USA . 755 parts In-Stock

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$99.990

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Kulean Microsystems

USA . 6,223 parts In-Stock

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TANS Electronics

Latvia . 4,699 parts In-Stock

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SupplyDigital Components

Austria . 3,678 parts In-Stock

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Corphita

USA . 1,056 parts In-Stock

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Native Components

USA . 961 parts In-Stock

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UHIMA Technologies

Türkiye . 883 parts In-Stock

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Northwest PG Solutions

USA . 551 parts In-Stock

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Problanco Electronics

Mexico . 411 parts In-Stock

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Corohmni

South Africa . 191 parts In-Stock

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Overview

Enhance your electronics projects with the BDC01DRL1G by Onsemi, a high-quality NPN Bipolar Junction Transistor designed for amplifier applications. Manufactured by industry leader Onsemi, this small signal transistor offers reliability and performance you can trust. With a maximum power dissipation of 1W and a maximum operating temperature of 150 °C, this transistor provides exceptional value and versatility for your designs. Whether you're a hobbyist or a professional, the BDC01DRL1G is the perfect choice for amplifying signals in your circuitry.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and resistance to heat, making the transistor suitable for a range of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making the transistor easy to use in various projects.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and efficiency in amplification circuits.

Maximum Power Dissipation (Abs): 1 W

With a maximum power dissipation of 1 W, this transistor can handle moderate power levels without overheating.

Maximum Collector-Emitter Voltage: 100 V

The high maximum collector-emitter voltage allows for use in circuits that require higher voltage levels, increasing versatility.

Minimum DC Current Gain (hFE): 25

A minimum DC current gain of 25 ensures stable and consistent amplification performance in different circuit configurations.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperatures, increasing its reliability in various environments.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BDC01DRL1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BDC01DRL1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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