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BDC01DRLRM

Onsemi

BDC01DRLRM by Onsemi

BDC01DRLRM by Onsemi is a NPN BJT transistor with hFE of 25, VCE of 100V, and IC of 0.5A. Ideal for amplifier applications due to its high transition frequency of 50MHz and operating temperature up to 150 °C. Packaged in cylindrical shape with through-hole terminals for easy installation.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,241 parts In-Stock

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Digiode

USA . 752 parts In-Stock

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Problanco Electronics

Mexico . 5,505 parts In-Stock

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SupplyDigital Components

Austria . 5,357 parts In-Stock

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Northwest PG Solutions

USA . 2,242 parts In-Stock

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Corphita

USA . 1,708 parts In-Stock

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Kulean Microsystems

USA . 1,506 parts In-Stock

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TANS Electronics

Latvia . 1,416 parts In-Stock

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UHIMA Technologies

Türkiye . 455 parts In-Stock

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Native Components

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Corohmni

South Africa . 71 parts In-Stock

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Overview

Enhance your amplifier projects with the BDC01DRLRM Small Signal Bipolar Junction Transistor by Onsemi. Known for their high-quality components, Onsemi delivers reliability and performance in every product. This NPN transistor is perfect for audio amplifiers and other signal processing applications. With a maximum collector-emitter voltage of 100V and a nominal transition frequency of 50MHz, this transistor offers excellent value and superior functionality. Upgrade your designs with the BDC01DRLRM and experience the difference that Onsemi's trusted craftsmanship can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, ensuring good durability and reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for amplifier applications.

Configuration: SINGLE

Single configuration transistors are easy to use and suitable for basic applications like amplification.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in such circuits.

Package Shape: ROUND

Round package shape allows for easy mounting and placement in circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals make it easy to solder and connect the transistor onto a PCB.

No. of Terminals: 3

3 terminals provide the necessary connections for basic amplifier circuits.

Package Style (Meter): CYLINDRICAL

Cylindrical package style is compact and space-saving, ideal for small electronic devices.

Minimum DC Current Gain (hFE): 25

With a minimum hFE of 25, this transistor provides consistent and reliable amplification within the specified range.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures up to 150 °C, making it suitable for a wide range of operating conditions.

Maximum Collector-Emitter Voltage: 100 V

Capable of handling high voltage applications up to 100V.

Transistor Element Material: SILICON

Silicon is a common and reliable material for transistor elements, ensuring stability and performance.

Maximum Collector Current (IC): 0.5 A

Can handle current up to 0.5A, suitable for low to medium power amplifier circuits.

Terminal Finish: TIN LEAD

Tin lead finish provides a stable and reliable connection for soldering.

Terminal Position: BOTTOM

Bottom terminal position makes it easy to mount and solder onto PCBs.

Nominal Transition Frequency (fT): 50 MHz

50 MHz transition frequency allows for high-frequency amplification, suitable for a wide range of applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BDC01DRLRM attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BDC01DRLRM Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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