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BDC01DZL1

Onsemi

BDC01DZL1 by Onsemi

BDC01DZL1 by Onsemi is a NPN BJT transistor with hFE of 25, VCEO of 100V, and IC of 0.5A. Ideal for amplifier applications, it operates up to 150 °C with fT of 50MHz. Its through-hole terminals and cylindrical package make it suitable for various electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,057 parts In-Stock

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Vyrian

USA . 811 parts In-Stock

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811

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Problanco Electronics

Mexico . 7,440 parts In-Stock

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TANS Electronics

Latvia . 5,978 parts In-Stock

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SupplyDigital Components

Austria . 4,181 parts In-Stock

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Corphita

USA . 2,200 parts In-Stock

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Kulean Microsystems

USA . 1,841 parts In-Stock

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Northwest PG Solutions

USA . 1,462 parts In-Stock

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Native Components

USA . 620 parts In-Stock

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Corohmni

South Africa . 179 parts In-Stock

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UHIMA Technologies

Türkiye . 6 parts In-Stock

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Overview

Enhance your electronic projects with the BDC01DZL1 by Onsemi! Crafted with precision and quality, this Small Signal Bipolar Junction Transistor (BJT) offers exceptional performance in amplifier applications. With a maximum collector-emitter voltage of 100V and a nominal transition frequency of 50MHz, this NPN transistor delivers reliable results. Trust in Onsemi's reputation for innovation and excellence to bring you a product that guarantees efficiency and durability. Upgrade your designs today with the BDC01DZL1 and experience the superior value and benefits it brings to your work.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: NPN

Common and versatile type of transistor widely used in various applications.

Configuration: SINGLE

Simplified circuit design, easier to work with.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, ensuring high performance in audio and signal amplification circuits.

Package Shape: ROUND

Compact design, saves space and allows for easy mounting in applications with limited space.

Terminal Form: THROUGH-HOLE

Ensures easy soldering and connection to circuit boards, making installation convenient.

Maximum Operating Temperature: 150 °C

Can withstand relatively high temperatures, suitable for applications where heat dissipation is a concern.

Maximum Collector-Emitter Voltage: 100 V

Supports high voltage applications, offering a wide range of compatibility.

Maximum Collector Current (IC): 0.5 A

Sufficient current handling capability for low to medium power applications.

Nominal Transition Frequency (fT): 50 MHz

Allows for high-frequency operation, making it suitable for applications requiring fast switching or amplification of high-frequency signals.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BDC01DZL1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BDC01DZL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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