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BDC01DRLRE

Onsemi

BDC01DRLRE by Onsemi

BDC01DRLRE by Onsemi is a NPN BJT transistor with hFE of 25, VCE of 100V, and IC of 0.5A. Ideal for amplifier applications due to its high transition frequency of 50MHz. Packaged in cylindrical shape with through-hole terminals for easy installation.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,430 parts In-Stock

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Vyrian

USA . 111 parts In-Stock

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Kulean Microsystems

USA . 8,000 parts In-Stock

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SupplyDigital Components

Austria . 7,504 parts In-Stock

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TANS Electronics

Latvia . 7,256 parts In-Stock

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Problanco Electronics

Mexico . 3,553 parts In-Stock

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Northwest PG Solutions

USA . 2,076 parts In-Stock

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Corphita

USA . 1,067 parts In-Stock

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Corohmni

South Africa . 472 parts In-Stock

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Native Components

USA . 365 parts In-Stock

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UHIMA Technologies

Türkiye . 20 parts In-Stock

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Overview

Elevate your electronic projects with the BDC01DRLRE by Onsemi, a high-quality NPN small signal bipolar junction transistor designed for amplification applications. Manufactured by Onsemi, a trusted industry leader, this transistor offers exceptional performance and reliability. With a maximum collector-emitter voltage of 100V and a nominal transition frequency of 50 MHz, this transistor is perfect for a wide range of amplifier circuits. Experience the value and benefits of using the BDC01DRLRE in your projects today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection to the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits and are widely available, making them a versatile choice.

Configuration: SINGLE

A single configuration simplifies circuit design and makes the transistor easier to integrate into electronic circuits.

Transistor Application: AMPLIFIER

Designed specifically for amplification applications, ensuring optimal performance in audio and signal processing circuits.

Package Shape: ROUND

The round shape allows for easy mounting and ensures a compact design, making it suitable for space-constrained applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and make soldering easier, ensuring reliability in circuit connections.

No. of Terminals: 3

The 3 terminals provide the necessary connections for emitter, base, and collector, allowing for easy integration into circuit designs.

Maximum Operating Temperature: 150 °C

The high operating temperature tolerance makes this transistor suitable for applications where temperature fluctuations may occur.

Maximum Collector-Emitter Voltage: 100 V

The high collector-emitter voltage rating allows for a wide range of voltage applications, enhancing the versatility of this transistor.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5 A, this transistor can handle moderate current loads, making it suitable for various amplification applications.

Nominal Transition Frequency (fT): 50 MHz

The high transition frequency of 50 MHz ensures fast response times and optimal performance in high-frequency circuit applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BDC01DRLRE attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BDC01DRLRE Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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