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BDC01DRL

Onsemi

BDC01DRL by Onsemi

BDC01DRL by Onsemi is a NPN BJT transistor with hFE of 25, VCE of 100V, and IC of 0.5A. Ideal for amplifier applications due to its high transition frequency of 50MHz. Packaged in cylindrical form with through-hole terminals, suitable for various electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,045 parts In-Stock

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Digiode

USA . 488 parts In-Stock

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Kulean Microsystems

USA . 4,085 parts In-Stock

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TANS Electronics

Latvia . 2,606 parts In-Stock

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SupplyDigital Components

Austria . 1,929 parts In-Stock

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Northwest PG Solutions

USA . 1,853 parts In-Stock

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Native Components

USA . 861 parts In-Stock

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UHIMA Technologies

Türkiye . 809 parts In-Stock

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Corphita

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Corohmni

South Africa . 335 parts In-Stock

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Problanco Electronics

Mexico . 24 parts In-Stock

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Overview

Upgrade your audio amplifier designs with the BDC01DRL by Onsemi. Manufactured with top-quality materials, this NPN bipolar junction transistor offers unparalleled performance and reliability for a wide range of applications. Whether you're working on audio amplifiers or other electronic projects, this product's high DC current gain, low operating temperature, and maximum collector-emitter voltage of 100V make it an ideal choice. Trust Onsemi for superior quality and innovation in small signal transistors. Elevate your projects today with the BDC01DRL.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering high efficiency and low noise performance.

Configuration: SINGLE

Single configuration simplifies circuit design and makes the transistor easy to use in different electronic projects.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring reliable and consistent performance in audio and signal amplification circuits.

Package Shape: ROUND

Round package shape allows for easier mounting and handling, making it convenient for various circuit layouts and designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and easy soldering, ensuring the transistor stays in place in the circuit.

No. of Terminals: 3

Having 3 terminals allows for versatile connections within a circuit, enabling flexibility in different wiring configurations.

Package Style (Meter): CYLINDRICAL

Cylindrical package style provides a compact form factor, making it suitable for space-constrained electronic devices and applications.

Minimum DC Current Gain (hFE): 25

A minimum DC current gain of 25 ensures stable and predictable amplification performance in various operating conditions.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, the transistor can withstand high-temperature environments without compromising its functionality.

Maximum Collector-Emitter Voltage: 100 V

Supports a maximum collector-emitter voltage of 100V, making it suitable for circuits requiring higher voltage capabilities.

Transistor Element Material: SILICON

Silicon material offers excellent thermal stability and high efficiency in signal processing, ensuring reliable and consistent performance.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5A, the transistor can handle moderate power loads without overheating or compromising its functionality.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures reliable solder connections and prevents oxidation, maintaining the longevity and performance of the transistor.

Terminal Position: BOTTOM

Bottom terminal position allows for convenient PCB mounting and soldering, making it easier to integrate the transistor into electronic circuits.

Nominal Transition Frequency (fT): 50 MHz

A nominal transition frequency of 50MHz indicates high-speed signal processing capabilities, making it suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BDC01DRL attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BDC01DRL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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