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BDC01DRL1

Onsemi

BDC01DRL1 by Onsemi

BDC01DRL1 by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 1W, max collector-emitter voltage of 100V, and min DC current gain of 25. The package style is cylindrical with through-hole terminals and can operate up to 150 °C.

Median Price

$0.084

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 485 parts In-Stock

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Digiode

USA . 840 parts In-Stock

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Corohmni

South Africa . 465 parts In-Stock

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$0.084

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Continental Prestige Electronics

USA . 10,000 parts In-Stock

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Problanco Electronics

Mexico . 8,102 parts In-Stock

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TANS Electronics

Latvia . 7,542 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

Austria . 1,739 parts In-Stock

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Northwest PG Solutions

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Native Components

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UHIMA Technologies

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Overview

Enhance your electronic projects with the BDC01DRL1 by Onsemi, a high-quality Small Signal Bipolar Junction Transistor that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this NPN transistor is perfect for amplifier applications. With a maximum power dissipation of 1W and a maximum collector-emitter voltage of 100V, this transistor delivers excellent value and efficiency. Upgrade your designs with the BDC01DRL1 and experience superior performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliable performance in various applications.

Polarity or Channel Type: NPN

Allows for use in a wide range of electronic circuits and applications.

Configuration: SINGLE

Simplified design and ease of use in circuit development.

Transistor Application: AMPLIFIER

Ideal for amplification tasks in audio, radio frequency, or other signal processing applications.

Package Shape: ROUND

Easy to handle and assemble in circuits, suitable for various mounting configurations.

Terminal Form: THROUGH-HOLE

Provides strong mechanical bonds and easy soldering during circuit assembly.

No. of Terminals: 3

Standard configuration for connections, easy to integrate into circuits.

Maximum Power Dissipation (Abs): 1 W

Can handle moderate power levels, suitable for many small signal applications.

Package Style (Meter): CYLINDRICAL

Compact design for space-constrained applications, easy to mount on PCBs.

Minimum DC Current Gain (hFE): 25

Ensures stable and predictable amplification characteristics in various operating conditions.

Maximum Operating Temperature: 150 °C

Can withstand high temperature environments, suitable for industrial and automotive applications.

Maximum Collector-Emitter Voltage: 100 V

Allows for handling high-voltage signals, expanding the range of potential applications.

Transistor Element Material: SILICON

Provides high performance and reliability characteristics for signal processing tasks.

Maximum Collector Current (IC): 0.5 A

Can handle moderate current levels, suitable for various small signal tasks.

Terminal Finish: TIN LEAD

Provides good solderability and long-term reliability for circuit connections.

Terminal Position: BOTTOM

Simplifies PCB layout and mounting, enhances ease of circuit design.

Peak Reflow Temperature °C: 235

Can withstand high-temperature soldering processes, ensuring reliable assembly.

Nominal Transition Frequency (fT): 50 MHz

Suitable for high-frequency signal processing tasks, such as RF amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BDC01DRL1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BDC01DRL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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