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BDC01DRLRA

Onsemi

BDC01DRLRA by Onsemi

BDC01DRLRA by Onsemi is a NPN transistor with hFE of 25, IC of 0.5A, and VCE of 100V. Ideal for amplifier applications due to its high transition frequency of 50MHz. Packaged in cylindrical shape with through-hole terminals for easy installation.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,824 parts In-Stock

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Digiode

USA . 1,709 parts In-Stock

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1,709

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TANS Electronics

Latvia . 7,201 parts In-Stock

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Kulean Microsystems

USA . 6,069 parts In-Stock

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6,069

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SupplyDigital Components

Austria . 3,628 parts In-Stock

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3,628

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Northwest PG Solutions

USA . 2,104 parts In-Stock

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Problanco Electronics

Mexico . 1,807 parts In-Stock

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Native Components

USA . 903 parts In-Stock

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903

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UHIMA Technologies

Türkiye . 860 parts In-Stock

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860

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Corphita

USA . 695 parts In-Stock

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695

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Corohmni

South Africa . 438 parts In-Stock

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Overview

Unlock the power of high-quality amplification with the BDC01DRLRA by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch performance and reliability in their Small Signal Bipolar Junction Transistors. Ideal for amplifier applications, this NPN transistor offers customers exceptional value and benefits. Trust Onsemi to provide you with a superior product that will meet all your amplification needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use in projects.

Transistor Application: AMPLIFIER

Designed specifically for amplification applications, ensuring optimal performance in amplifying signals.

Package Shape: ROUND

Round shape facilitates easy mounting and installation, suitable for compact designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and easy soldering, ensuring reliable operation.

No. of Terminals: 3

Three terminals allow for easy connectivity in circuits, simplifying the design process.

Package Style (Meter): CYLINDRICAL

Cylindrical package style is space-efficient and suitable for applications where size is a concern.

Minimum DC Current Gain (hFE): 25

Minimum DC current gain of 25 ensures reliable amplification of signals with minimal distortion.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150 °C ensures reliable performance in various environments.

Maximum Collector-Emitter Voltage: 100 V

High maximum collector-emitter voltage of 100V allows for handling of higher voltages, expanding application possibilities.

Transistor Element Material: SILICON

Silicon material offers superior electrical properties, contributing to the overall performance and reliability of the transistor.

Maximum Collector Current (IC): 0.5 A

Maximum collector current of 0.5A allows for handling of higher currents, making it suitable for a range of applications.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good conductivity and solderability, ensuring secure connections.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy mounting and soldering in circuits, enhancing user-friendliness.

Nominal Transition Frequency (fT): 50 MHz

Nominal transition frequency of 50MHz indicates high-speed performance, making it suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BDC01DRLRA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BDC01DRLRA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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