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BCX17LT3G

Onsemi

BCX17LT3G by Onsemi

BCX17LT3G by Onsemi is a PNP BJT transistor with 45V VCEO, 0.5A IC, and 150 °C max temp. Ideal for small signal applications in electronics due to its compact SOT package and high DC current gain of 40 (hFE). Suitable for surface mount PCB designs requiring low power dissipation.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 12,870 parts In-Stock

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Digiode

USA . 1,210 parts In-Stock

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1,210

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Distributors (Availability)

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AZTECH Wire

Italy . 849 parts In-Stock

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$14.930

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849

$14.930

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Native Components

USA . 77 parts In-Stock

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$29.754

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$28.564

77

$29.754

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$28.564

Northwest PG Solutions

USA . 1,634 parts In-Stock

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$32.730

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1,634

$32.730

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QUARKTWIN TECHNOLOGY LTD

USA . 23,992 parts In-Stock

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23,992

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SupplyDigital Components

Austria . 7,807 parts In-Stock

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7,807

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TANS Electronics

Latvia . 7,394 parts In-Stock

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Problanco Electronics

Mexico . 2,607 parts In-Stock

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2,607

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Kulean Microsystems

USA . 2,439 parts In-Stock

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2,439

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Corphita

USA . 1,380 parts In-Stock

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1,380

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UHIMA Technologies

Türkiye . 677 parts In-Stock

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Corohmni

South Africa . 319 parts In-Stock

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Overview

The BCX17LT3G by Onsemi is a top-quality Small Signal Bipolar Junction Transistor (BJT) that offers unparalleled performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this PNP transistor is perfect for a variety of applications. With a maximum collector current of 0.5A and a minimum DC current gain of 40, this transistor provides exceptional power dissipation and temperature resistance. Its surface mount capability and compact design make it ideal for space-constrained projects. Trust in Onsemi's reputation for excellence and choose the BCX17LT3G for all your small signal BJT needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

Allows for easy integration into PNP circuits and systems.

Configuration: SINGLE

Simplifies circuit design and reduces complexity.

Surface Mount: YES

Enables easy and space-efficient PCB assembly.

Package Shape: RECTANGULAR

Facilitates neat and organized PCB layout.

Terminal Form: GULL WING

Enhances mechanical stability and solder joint reliability.

No. of Terminals: 3

Simplifies circuit connections and reduces complexity.

Maximum Power Dissipation (Abs): 0.3 W

Allows for safe operation within specified power limits.

Package Style (Meter): SMALL OUTLINE

Fits well in compact electronic designs.

Minimum DC Current Gain (hFE): 40

Ensures consistent and reliable amplification performance.

Maximum Operating Temperature: 150 °C

Suitable for use in a wide range of temperature environments.

Maximum Collector-Emitter Voltage: 45 V

Allows for safe voltage operation within specified limits.

Transistor Element Material: SILICON

Provides good performance characteristics and reliability.

Maximum Collector Current (IC): 0.5 A

Allows for safe current operation within specified limits.

Terminal Finish: TIN

Provides good solderability and corrosion resistance.

Terminal Position: DUAL

Facilitates easy and secure PCB mounting.

Peak Reflow Temperature °C: 260

Can withstand high-temperature soldering processes without damage.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCX17LT3G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Trade Compliance

BCX17LT3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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