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BCX19,235

NXP Semiconductors

BCX19,235 by NXP Semiconductors

BCX19,235 by NXP Semiconductors is a small signal NPN bipolar junction transistor (BJT) with a max collector-emitter voltage of 45V and a max collector current of 0.5A. It is designed for switching applications and has a min DC current gain of 40 (hFE).

Median Price

$0.137

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 669 parts In-Stock

1+ parts

$0.250

100+ parts

$0.095

1k+ parts

$0.061

10k+ parts

$0.047

669

$0.250

$0.095

$0.061

$0.047

Future Electronics

Canada . 220,000 parts In-Stock

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-

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$0.024

220,000

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$0.024

Distributors (In-Stock)

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Nova Conductors

Japan . 600 parts In-Stock

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$0.055

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600

$0.055

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Digiode

USA . 3,066 parts In-Stock

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$0.209

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3,066

$0.209

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NAC Semi

USA . 60,000 parts In-Stock

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$0.041

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$0.041

Chip Stock

USA . 54,000 parts In-Stock

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54,000

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IBS Electronics

USA . 10,000 parts In-Stock

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$0.031

10,000

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$0.031

Vyrian

USA . 3,820 parts In-Stock

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3,820

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VNN

France . 3,134 parts In-Stock

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Anansix

USA . 1,268 parts In-Stock

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1,268

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Distributors (Availability)

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Continental Prestige Electronics

USA . 6,946 parts In-Stock

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$0.055

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$0.053

6,946

$0.055

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$0.053

Netroflash

USA . 2,000 parts In-Stock

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$0.055

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$0.052

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$0.051

2,000

$0.055

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$0.051

Argo Parts USA

USA . 1,607 parts In-Stock

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$0.055

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$0.053

1,607

$0.055

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$0.053

Corphita

USA . 3,623 parts In-Stock

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$0.198

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3,623

$0.198

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AZTECH Wire

Italy . 11,016 parts In-Stock

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$0.240

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Perfect Parts

USA . 235,200 parts In-Stock

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235,200

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QUARKTWIN TECHNOLOGY LTD

USA . 24,532 parts In-Stock

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iodParts Technologies Inc.

India . 8,800 parts In-Stock

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UNI Independent Distributors

Spain . 5,168 parts In-Stock

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Supply Digital

USA . 488 parts In-Stock

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Overview

Experience the exceptional quality and performance of the BCX19,235 by NXP Semiconductors. As a leader in semiconductor manufacturing, NXP Semiconductors brings you the latest advancements in small signal bipolar junction transistors. This NPN transistor is perfect for switching applications, offering unparalleled reliability and efficiency. With its compact size and surface mount design, it fits seamlessly into any project. Benefit from its low VCEsat of just 0.62 V, maximizing power dissipation and ensuring optimal functionality. Trust NXP Semiconductors to deliver high-quality components that meet your needs and exceed your expectations. Explore the possibilities with the BCX19,235 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides a robust and durable packaging for the transistor, ensuring reliable performance and protection against external elements. It makes the product a good choice for various applications.

Polarity or Channel Type: NPN

The NPN polarity enables the transistor to work as an amplifier or a switch in electronic circuits. This versatility makes it a suitable choice for a wide range of applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes integration easier. It enhances the product's overall efficiency and reduces complexity in electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and efficient power control. It is an ideal choice for applications that require precise control of electrical signals.

Surface Mount: YES

The surface mount capability of this transistor allows for easy integration onto printed circuit boards, saving space and facilitating automated assembly processes. This feature makes it a convenient choice for miniature electronic devices.

Maximum VCEsat: 0.62 V

The low collector-to-emitter saturation voltage ensures minimal voltage drops across the transistor, resulting in improved efficiency and reduced power dissipation. This characteristic makes it an energy-efficient choice.

Package Shape: RECTANGULAR

The rectangular package shape enables efficient and space-saving mounting on PCBs. It allows for effective heat dissipation and simplifies manufacturing processes, making it a favorable choice for circuit board designs.

Terminal Form: GULL WING

The gull wing terminal form offers excellent mechanical stability and ease of soldering during assembly. This feature enhances the product's reliability and makes it suitable for robust applications.

No. of Elements: 1

With a single element, this transistor offers simplicity in circuit design and ease of integration. Its straightforward configuration makes it an excellent choice for applications where simplicity is key.

No. of Terminals: 3

The three terminals provide a complete electrical connection for the transistor, allowing for smooth signal transmission and efficient control. This feature ensures reliable performance and easy integration into various circuits.

Maximum Power Dissipation (Abs): 0.25 W

The low maximum power dissipation ensures that the transistor operates within its safe limits, preventing overheating and potential damage. This characteristic enhances its reliability and longevity.

Package Style (Meter): SMALL OUTLINE

The small outline package style enables compact circuit design and space-saving on PCBs. This style is suitable for applications where size is a constraint, making it a practical choice.

Minimum DC Current Gain (hFE): 40

With a minimum DC current gain of 40, this transistor ensures stable amplification and accurate signal control. It provides consistent performance in various electronic applications, making it a reliable choice.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature capability allows the transistor to withstand elevated temperatures without performance degradation or failure. This characteristic makes it suitable for applications in harsh environments.

Maximum Collector-Emitter Voltage: 45 V

With a maximum collector-emitter voltage of 45 V, this transistor can handle higher voltage levels in circuits, providing flexibility and versatility in various applications.

Transistor Element Material: SILICON

The silicon material used in the transistor's element offers excellent thermal conductivity, high temperature tolerance, and reliable performance. It ensures the product's durability and stability.

Maximum Collector Current (IC): 0.5 A

The maximum collector current rating of 0.5 A enables the transistor to handle higher current levels, making it suitable for power control and switching applications where high currents are involved.

Terminal Finish: TIN

The tin terminal finish provides excellent solderability, preventing oxidation and ensuring reliable connections during assembly. This finish enhances the product's durability and simplifies manufacturing processes.

Terminal Position: DUAL

The dual terminal position allows for versatile and flexible PCB mounting options, accommodating different circuit layouts. This characteristic enhances the transistor's adaptability and ease of integration.

Moisture Sensitivity Level (MSL): 1

With a moisture sensitivity level of 1, this transistor can withstand standard moisture exposure without compromising its functionality. It ensures long-term reliability and makes it suitable for various environments.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature of 30 seconds ensures that the transistor can withstand the required reflow soldering processes without damage. This feature ensures reliable and consistent soldering during assembly.

Peak Reflow Temperature °C: 260

The peak reflow temperature rating of 260°C ensures that the transistor can endure the high temperatures encountered during reflow soldering without degradation. It makes it a suitable choice for automated assembly processes.

Nominal Transition Frequency (fT): 100 MHz

With a nominal transition frequency of 100 MHz, this transistor offers excellent high-frequency response and fast switching speeds. It is ideal for applications that require efficient and precise high-frequency signal control.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCX19,235 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.62 V

Trade Compliance

BCX19,235 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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