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BC640G

Onsemi

BC640G by Onsemi

BC640G by Onsemi is a PNP BJT with 3 terminals, max. power dissipation of 1.5W, and hFE of 40. Ideal for applications requiring a max. collector-emitter voltage of 80V, such as amplifiers or signal processing circuits due to its high transition frequency of 150MHz.

Median Price

$0.116

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 9,911 parts In-Stock

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Digiode

USA . 1,751 parts In-Stock

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Schukat

Germany . 1,000 parts In-Stock

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$0.116

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$0.080

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$0.057

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-

$0.116

$0.080

$0.057

Distributors (Availability)

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Corohmni

South Africa . 262 parts In-Stock

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AZTECH Wire

Italy . 865 parts In-Stock

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$16.150

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Problanco Electronics

Mexico . 7,775 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Authorized Procurement Solutions

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SupplyDigital Components

Austria . 2,201 parts In-Stock

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TANS Electronics

Latvia . 2,078 parts In-Stock

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Lixinc

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Northwest PG Solutions

USA . 1,445 parts In-Stock

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Corphita

USA . 1,205 parts In-Stock

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Kulean Microsystems

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Native Components

USA . 933 parts In-Stock

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UHIMA Technologies

Türkiye . 682 parts In-Stock

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Kepictronics

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Overview

Unleash the power of the BC640G by Onsemi, a top-quality Small Signal Bipolar Junction Transistor that exceeds expectations. Manufactured by Onsemi, a trusted name in the industry, this PNP transistor offers unparalleled performance in various applications. With a maximum collector-emitter voltage of 80V and a minimum DC current gain of 40, this transistor delivers exceptional value and reliability. Whether you're looking to amplify signals or control electrical currents, the BC640G is the perfect choice for your electronic projects. Experience the difference with Onsemi's superior technology and innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the transistor lightweight and durable, ideal for portable electronic devices.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration in circuits that require this specific polarity.

Configuration: SINGLE

The single configuration simplifies the design and reduces the complexity of the circuit.

Maximum Power Dissipation (Abs): 1.5 W

With a high maximum power dissipation, this transistor can handle a significant amount of power without overheating.

Maximum Collector-Emitter Voltage: 80 V

The high maximum collector-emitter voltage allows for the transistor to be used in various high voltage applications.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its reliability and efficiency in electronic devices.

Nominal Transition Frequency (fT): 150 MHz

The high nominal transition frequency allows for fast switching speeds in electronic circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC640G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC640G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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