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BF393G

Onsemi

BF393G by Onsemi

BF393G by Onsemi is a NPN BJT with 300V VCEO, 0.5A IC, and 50MHz fT. Ideal for low-power applications requiring high DC current gain and operating up to 150 °C. Package: PLASTIC/EPOXY, CYLINDRICAL shape with THROUGH-HOLE terminals.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 12,768 parts In-Stock

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Digiode

USA . 464 parts In-Stock

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Manotoh

Italy . 108 parts In-Stock

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Native Components

USA . 397 parts In-Stock

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$0.156

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$0.150

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Northwest PG Solutions

USA . 1,457 parts In-Stock

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$0.172

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$0.151

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AZTECH Wire

Italy . 569 parts In-Stock

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$16.310

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569

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Component Stockers USA

USA . 648 parts In-Stock

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$99.990

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Problanco Electronics

Mexico . 5,648 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 4,473 parts In-Stock

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Kulean Microsystems

USA . 3,259 parts In-Stock

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SupplyDigital Components

Austria . 2,286 parts In-Stock

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Corphita

USA . 1,204 parts In-Stock

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TANS Electronics

Latvia . 597 parts In-Stock

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UHIMA Technologies

Türkiye . 362 parts In-Stock

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Corohmni

South Africa . 155 parts In-Stock

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Overview

Discover the BF393G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor designed for a range of applications. With a focus on performance and reliability, Onsemi delivers cutting-edge technology in every product. The BF393G offers customers value and efficiency, with benefits that include high power dissipation capabilities, a wide operating temperature range, and superior transistor element material. Whether you're working on electronics, telecommunications, or automotive projects, the BF393G is the perfect choice for your needs. Upgrade your designs with Onsemi's exceptional components today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, ensuring reliability in various operating conditions.

Polarity or Channel Type: NPN

The NPN configuration allows for easy integration in many circuit designs and applications.

Configuration: SINGLE

Simplifies circuit design and reduces complexity, making it easier to work with.

Package Shape: ROUND

Round shape enables easy mounting and handling during assembly.

No. of Terminals: 3

Having 3 terminals allows for versatile connectivity options in a circuit.

Maximum Power Dissipation (Abs): 0.625 W

With a relatively high power dissipation, this transistor can handle moderate loads without overheating.

Package Style (Meter): CYLINDRICAL

The cylindrical package style provides a compact and space-saving form factor for the transistor.

Minimum DC Current Gain (hFE): 40

A higher DC current gain ensures better amplification performance and stability in the circuit.

Maximum Operating Temperature: 150 °C

Can operate in relatively high temperature environments without degradation in performance.

Maximum Collector-Emitter Voltage: 300 V

Can withstand high voltage levels, making it suitable for a wide range of applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance, low noise, and reliable operation in various conditions.

Maximum Collector Current (IC): 0.5 A

Capable of handling moderate current levels, making it versatile for different types of circuits.

Terminal Finish: TIN SILVER COPPER

Provides good conductivity and corrosion resistance for reliable connections.

Terminal Position: BOTTOM

Bottom terminal position allows for easier PCB layout and component placement.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during manufacturing processes without damage.

Nominal Transition Frequency (fT): 50 MHz

Higher transition frequency allows for faster switching speeds and better high-frequency performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BF393G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BF393G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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