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BF393

Onsemi

BF393 by Onsemi

The Onsemi BF393 is a NPN BJT transistor with 3 terminals and max power dissipation of 0.625W. It has a min DC current gain of 40, max collector-emitter voltage of 300V, and operates up to 150 °C. Ideal for applications requiring high voltage switching in electronic circuits.

Median Price

$0.171

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

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IBS Electronics

USA . 3,693 parts In-Stock

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Digiode

USA . 2,418 parts In-Stock

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Huijzer Components

Netherlands . 1,951 parts In-Stock

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Component Electronics Inc.

Canada . 585 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 525 parts In-Stock

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Vyrian

USA . 382 parts In-Stock

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LittleDiode

UK . 339 parts In-Stock

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Greenchips

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SIE Connect GmbH - GreenChips

Germany . 128 parts In-Stock

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ECAB

Sweden . 127 parts In-Stock

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Manotoh

Italy . 81 parts In-Stock

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GES GmbH

Germany . 36 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 15 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 12 parts In-Stock

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Corohmni

South Africa . 353 parts In-Stock

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Native Components

USA . 950 parts In-Stock

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$0.817

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Northwest PG Solutions

USA . 11 parts In-Stock

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$0.898

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Assy Fe

Spain . 6,881 parts In-Stock

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Problanco Electronics

Mexico . 4,415 parts In-Stock

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TANS Electronics

Latvia . 3,298 parts In-Stock

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Kulean Microsystems

USA . 2,971 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 2,911 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 907 parts In-Stock

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SupplyDigital Components

Austria . 782 parts In-Stock

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Overview

Upgrade your electronic projects with the BF393 by Onsemi, a top-quality Small Signal Bipolar Junction Transistor (BJT) that promises reliability and performance. Manufactured by Onsemi, known for their cutting-edge technology, this NPN transistor offers a range of applications in various industries. With a maximum collector-emitter voltage of 300V and a nominal transition frequency of 50MHz, the BF393 provides exceptional value and benefits to customers seeking superior components for their designs. Explore the advantages of this transistor today and take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes this transistor lightweight and durable, allowing for easy handling and long-term reliability.

Polarity or Channel Type: NPN

The NPN type configuration provides higher current gain and faster switching speeds, making it suitable for amplification and switching applications.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity, making it easier to integrate into various electronic systems.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand higher temperatures, making it ideal for use in demanding environments.

Maximum Collector-Emitter Voltage: 300 V

The high maximum collector-emitter voltage rating of 300V ensures reliable performance and protection against voltage spikes in the circuit.

Minimum DC Current Gain (hFE): 40

With a minimum DC current gain of 40, this transistor provides consistent amplification of signals, ensuring accuracy and stability in circuit operation.

Maximum Collector Current (IC): 0.5 A

The maximum collector current rating of 0.5A allows for higher power handling capabilities, making it suitable for various power applications.

Nominal Transition Frequency (fT): 50 MHz

The high nominal transition frequency of 50 MHz allows for fast switching speeds and high-frequency operation, making it ideal for RF and high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BF393 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BF393 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-14-417-7924, 5961144177924

NIIN

144177924

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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