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BF393RLRP

Onsemi

BF393RLRP by Onsemi

BF393RLRP by Onsemi is a NPN BJT with hFE of 40, VCEO of 300V, and IC of 0.5A. Ideal for applications requiring high frequency performance up to 50MHz in cylindrical package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,012 parts In-Stock

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Vyrian

USA . 1,227 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 364 parts In-Stock

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$121.619

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$116.755

364

$121.619

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$116.755

Northwest PG Solutions

USA . 2,310 parts In-Stock

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$133.781

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SupplyDigital Components

Austria . 8,335 parts In-Stock

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Problanco Electronics

Mexico . 6,464 parts In-Stock

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Corphita

USA . 1,787 parts In-Stock

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Kulean Microsystems

USA . 1,360 parts In-Stock

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UHIMA Technologies

Türkiye . 523 parts In-Stock

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Corohmni

South Africa . 484 parts In-Stock

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TANS Electronics

Latvia . 14 parts In-Stock

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Overview

Looking to amplify your electronic projects with top-notch performance and reliability? Look no further than the BF393RLRP by Onsemi. As a leading manufacturer in the industry, Onsemi delivers exceptional quality small signal bipolar junction transistors that are perfect for a wide range of applications. Whether you're a hobbyist or a professional, this NPN transistor offers value, benefits, and advantages that will elevate your designs. Trust Onsemi to provide you with the best in electronics components.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and durability, making the transistor suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product versatile for electronic designs.

Configuration: SINGLE

SINGLE configuration simplifies circuit design and allows for easy integration into existing circuits.

Package Shape: ROUND

The round shape of the package enables easy mounting and handling during assembly.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections and ease of soldering during PCB assembly.

No. of Terminals: 3

Having 3 terminals allows for versatile connectivity options in circuit design.

Package Style (Meter): CYLINDRICAL

The cylindrical package style provides compactness and easy integration into space-constrained layouts.

Minimum DC Current Gain (hFE): 40

A higher minimum DC current gain ensures stable and reliable amplification performance in circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand demanding thermal conditions.

Maximum Collector-Emitter Voltage: 300 V

The high maximum collector-emitter voltage rating allows for use in circuits with higher voltage requirements.

Transistor Element Material: SILICON

Silicon transistors offer good performance characteristics and reliability in electronic circuits.

Maximum Collector Current (IC): 0.5 A

The maximum collector current rating of 0.5 A allows for handling moderate current loads in circuit applications.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and ensures reliable electrical connections.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy PCB mounting and routing of connections during assembly.

Nominal Transition Frequency (fT): 50 MHz

A higher nominal transition frequency allows for faster switching speeds in electronic circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BF393RLRP attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BF393RLRP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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