Loading...

BF393RLRM

Onsemi

BF393RLRM by Onsemi

BF393RLRM by Onsemi is a NPN BJT with hFE of 40, VCEO of 300V, and IC of 0.5A. Ideal for applications requiring high voltage switching in through-hole configurations at up to 150 °C operating temperature.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,075 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,075

-

-

-

-

Digiode

USA . 377 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

377

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 172 parts In-Stock

1+ parts

$80.445

100+ parts

-

1k+ parts

-

10k+ parts

$77.227

172

$80.445

-

-

$77.227

Northwest PG Solutions

USA . 1,676 parts In-Stock

1+ parts

$88.489

100+ parts

-

1k+ parts

-

10k+ parts

-

1,676

$88.489

-

-

-

Problanco Electronics

Mexico . 7,023 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,023

-

-

-

-

Kulean Microsystems

USA . 5,428 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,428

-

-

-

-

TANS Electronics

Latvia . 5,284 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,284

-

-

-

-

SupplyDigital Components

Austria . 2,772 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,772

-

-

-

-

Corphita

USA . 612 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

612

-

-

-

-

Corohmni

South Africa . 200 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

200

-

-

-

-

UHIMA Technologies

Türkiye . 184 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

184

-

-

-

-

Overview

Elevate your electronic designs with the BF393RLRM from Onsemi, a top-of-the-line Small Signal Bipolar Junction Transistor (BJT) that offers unparalleled performance and reliability. Onsemi is known for its cutting-edge technology and innovative solutions in the electronics industry, making this NPN transistor a must-have component for a wide range of applications. With a maximum operating temperature of 150 °C and a maximum collector-emitter voltage of 300V, this transistor provides exceptional value, efficiency, and versatility to help you achieve your design goals with ease. Partner with Onsemi and experience the difference in quality and performance today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used and offer good amplification characteristics.

Configuration: SINGLE

Simplified design with single transistor configuration for ease of use.

Package Shape: ROUND

Compact and space-saving design for efficient PCB layout.

Terminal Form: THROUGH-HOLE

Easy to solder onto a circuit board for secure connections.

No. of Terminals: 3

Standard 3-pin configuration for typical transistor applications.

Package Style (Meter): CYLINDRICAL

Cylindrical shape for easy mounting and handling.

Minimum DC Current Gain (hFE): 40

A minimum gain of 40 ensures good amplification capability.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, suitable for industrial applications.

Maximum Collector-Emitter Voltage: 300 V

High maximum voltage rating for versatile use in different circuits.

Transistor Element Material: SILICON

Silicon-based material for reliable and stable transistor performance.

Maximum Collector Current (IC): 0.5 A

Capable of handling up to 0.5A of current for various circuit requirements.

Terminal Finish: TIN LEAD

Tin lead finish for good solderability and electrical conductivity.

Terminal Position: BOTTOM

Bottom terminal position for ease of PCB mounting and soldering.

Nominal Transition Frequency (fT): 50 MHz

High transition frequency for fast switching and high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BF393RLRM attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BF393RLRM Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20