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BF393RLRA

Onsemi

BF393RLRA by Onsemi

BF393RLRA by Onsemi is a NPN BJT with hFE of 40, VCEO of 300V, and IC of 0.5A. Ideal for applications requiring high voltage switching in electronic circuits. Its cylindrical package and through-hole terminals make it suitable for various designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,026 parts In-Stock

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Digiode

USA . 803 parts In-Stock

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803

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Distributors (Availability)

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Native Components

USA . 681 parts In-Stock

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$9.528

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681

$9.528

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Northwest PG Solutions

USA . 1,615 parts In-Stock

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$10.481

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$9.432

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1,615

$10.481

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SupplyDigital Components

Austria . 4,021 parts In-Stock

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4,021

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TANS Electronics

Latvia . 3,627 parts In-Stock

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3,627

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Kulean Microsystems

USA . 1,824 parts In-Stock

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1,824

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UHIMA Technologies

Türkiye . 679 parts In-Stock

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679

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Corphita

USA . 518 parts In-Stock

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Corohmni

South Africa . 483 parts In-Stock

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Problanco Electronics

Mexico . 286 parts In-Stock

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Overview

Unleash the power of innovation with the Onsemi BF393RLRA Small Signal Bipolar Junction Transistor. Manufactured by industry leader Onsemi, this NPN transistor offers unmatched quality and reliability for a wide range of applications. Whether you're designing circuits for automotive electronics, industrial controls, or telecommunications, this transistor's superior performance and high DC current gain will elevate your projects to new heights. Trust Onsemi to deliver cutting-edge technology that meets your needs, every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and reliable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering high efficiency and performance.

Configuration: SINGLE

Simplifies circuit design and integration, making it easy to use in different electronic systems.

Package Shape: ROUND

Round shape allows for easy mounting and positioning within a circuit or on a PCB.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections, ensuring stable and secure placement on a circuit board.

No. of Terminals: 3

Provides necessary connections for base, collector, and emitter, enabling proper functioning of the transistor.

Package Style (Meter): CYLINDRICAL

Cylindrical package style is compact and space-saving, ideal for applications with limited board space.

Minimum DC Current Gain (hFE): 40

A high minimum DC current gain ensures reliable and consistent performance in amplification circuits.

Maximum Operating Temperature: 150 °C

Can operate efficiently at high temperatures without compromising performance, suitable for demanding environments.

Maximum Collector-Emitter Voltage: 300 V

Handles high voltage levels, making it suitable for applications that require voltage amplification and switching.

Transistor Element Material: SILICON

Silicon transistors offer high performance, reliability, and efficiency compared to other materials.

Maximum Collector Current (IC): 0.5 A

Can handle moderate current levels, suitable for various low to medium power applications.

Terminal Finish: TIN LEAD

Tin lead finish provides good solderability and corrosion resistance for long-term reliability.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy PCB mounting and soldering, ensuring secure connections.

Nominal Transition Frequency (fT): 50 MHz

High transition frequency allows for fast signal processing and switching, making it suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BF393RLRA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BF393RLRA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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