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BF393RLRE

Onsemi

BF393RLRE by Onsemi

BF393RLRE by Onsemi is a NPN BJT with hFE of 40, VCEO of 300V, and IC of 0.5A. Ideal for applications requiring high frequency performance up to 50MHz in cylindrical package style. Suitable for amplification and switching circuits due to its single configuration and through-hole terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,796 parts In-Stock

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Vyrian

USA . 732 parts In-Stock

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Native Components

USA . 288 parts In-Stock

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$18.270

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288

$18.270

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Northwest PG Solutions

USA . 957 parts In-Stock

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$20.097

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$18.087

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957

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SupplyDigital Components

Austria . 5,735 parts In-Stock

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Kulean Microsystems

USA . 4,967 parts In-Stock

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Problanco Electronics

Mexico . 3,993 parts In-Stock

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3,993

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TANS Electronics

Latvia . 2,840 parts In-Stock

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2,840

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Corphita

USA . 1,997 parts In-Stock

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Corohmni

South Africa . 332 parts In-Stock

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UHIMA Technologies

Türkiye . 305 parts In-Stock

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Overview

Elevate your electronic designs with the BF393RLRE by Onsemi, a high-quality Small Signal Bipolar Junction Transistor that delivers outstanding performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this NPN transistor offers a range of applications, from amplification to switching circuits. With a minimum DC Current Gain of 40 and a maximum Collector-Emitter Voltage of 300V, this transistor is designed to exceed expectations. Trust Onsemi for top-notch quality and innovation in every component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product versatile for different electronic designs.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to integrate this transistor into a system.

Package Shape: ROUND

The round shape allows for easy mounting and integration into circular PCB layouts.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure connection and ease of soldering during assembly.

No. of Terminals: 3

With three terminals, this transistor can be easily connected in circuits for various applications.

Package Style (Meter): CYLINDRICAL

The cylindrical package style provides a compact form factor for space-constrained PCB designs.

Minimum DC Current Gain (hFE): 40

A minimum DC current gain of 40 ensures reliable amplification in electronic circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high-temperature environments.

Maximum Collector-Emitter Voltage: 300 V

The high collector-emitter voltage rating of 300V allows for use in a wide range of voltage applications.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its reliability and performance in transistors.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5A, this transistor can handle moderate current loads in circuits.

Terminal Finish: TIN LEAD

The tin lead finish on the terminals ensures good solderability for easy assembly.

Terminal Position: BOTTOM

The bottom terminal position simplifies PCB layout and connection to other components.

Nominal Transition Frequency (fT): 50 MHz

The high nominal transition frequency of 50MHz enables fast switching and high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BF393RLRE attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BF393RLRE Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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