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BF393ZL1

Onsemi

BF393ZL1 by Onsemi

BF393ZL1 by Onsemi is a NPN BJT with max. power dissipation of 0.625W and max. collector-emitter voltage of 300V. With a min. DC current gain of 40, it's ideal for applications requiring high-frequency performance up to 50MHz in cylindrical package style for through-hole mounting.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,398 parts In-Stock

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Digiode

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SupplyDigital Components

Austria . 7,971 parts In-Stock

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TANS Electronics

Latvia . 6,802 parts In-Stock

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Corphita

USA . 2,209 parts In-Stock

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UHIMA Technologies

Türkiye . 868 parts In-Stock

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Northwest PG Solutions

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Native Components

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Kulean Microsystems

USA . 319 parts In-Stock

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Corohmni

South Africa . 248 parts In-Stock

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Problanco Electronics

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Overview

Elevate your electronic projects with the BF393ZL1 by Onsemi, a high-quality Small Signal Bipolar Junction Transistor that offers exceptional performance and reliability. Manufactured by the trusted brand Onsemi, this NPN transistor is perfect for a variety of applications. With its unique package shape and configuration, it provides seamless integration into your designs. Experience the benefits of this transistor's maximum power dissipation and collector-emitter voltage, ensuring optimal functionality. Trust Onsemi to deliver innovative solutions for your electronics needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor versatile and widely compatible.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity, making it easier to integrate into projects.

Maximum Power Dissipation (Abs): 0.625 W

The high power dissipation capability allows the transistor to handle moderate power applications without overheating.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand a wide range of environmental conditions and operate reliably.

Nominal Transition Frequency (fT): 50 MHz

The high transition frequency allows for fast switching speeds, making it suitable for high-frequency applications like amplifiers and oscillators.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BF393ZL1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BF393ZL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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