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BCR523UE6327HTSA1

Infineon Technologies

BCR523UE6327HTSA1 by Infineon Technologies

Infineon's BCR523UE6327HTSA1 is a NPN BJT with 2 elements, built-in resistor, and hFE of 70. Ideal for switching applications, it has a max operating temp of 150°C, VCE of 50V, and IC of 0.5A. With a fT of 100MHz, this transistor in small outline package suits high-frequency needs.

Median Price

$0.173

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 99,000 parts In-Stock

1+ parts

-

100+ parts

$0.173

1k+ parts

$0.143

10k+ parts

$0.128

99,000

-

$0.173

$0.143

$0.128

DigiKey

USA . 99,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.220

99,000

-

-

-

$0.220

Verical

USA . 54,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.160

54,000

-

-

-

$0.160

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 72 parts In-Stock

1+ parts

$0.126

100+ parts

-

1k+ parts

-

10k+ parts

-

72

$0.126

-

-

-

Digiode

USA . 548 parts In-Stock

1+ parts

$0.134

100+ parts

-

1k+ parts

-

10k+ parts

-

548

$0.134

-

-

-

Vyrian

USA . 8,247 parts In-Stock

1+ parts

-

100+ parts

-

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8,247

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-

-

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VNN

France . 3,895 parts In-Stock

1+ parts

-

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3,895

-

-

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 191,086 parts In-Stock

1+ parts

$0.120

100+ parts

-

1k+ parts

-

10k+ parts

-

191,086

$0.120

-

-

-

Semicontronic

India . 191,064 parts In-Stock

1+ parts

$0.120

100+ parts

$0.117

1k+ parts

$0.116

10k+ parts

-

191,064

$0.120

$0.117

$0.116

-

Bastille Electronics

Australia . 3,372 parts In-Stock

1+ parts

$0.126

100+ parts

$0.120

1k+ parts

$0.114

10k+ parts

$0.112

3,372

$0.126

$0.120

$0.114

$0.112

Continental Prestige Electronics

USA . 6,154 parts In-Stock

1+ parts

$0.126

100+ parts

-

1k+ parts

-

10k+ parts

$0.124

6,154

$0.126

-

-

$0.124

Argo Parts USA

USA . 3,300 parts In-Stock

1+ parts

$0.126

100+ parts

-

1k+ parts

-

10k+ parts

$0.122

3,300

$0.126

-

-

$0.122

Corphita

USA . 63 parts In-Stock

1+ parts

$0.127

100+ parts

-

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10k+ parts

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63

$0.127

-

-

-

Component Stockers USA

USA . 138,934 parts In-Stock

1+ parts

$0.150

100+ parts

$0.140

1k+ parts

$0.120

10k+ parts

$0.120

138,934

$0.150

$0.140

$0.120

$0.120

Corohmni

South Africa . 517 parts In-Stock

1+ parts

$0.525

100+ parts

-

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517

$0.525

-

-

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Aztec Data Supply Inc.

USA . 217 parts In-Stock

1+ parts

$1.070

100+ parts

-

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-

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217

$1.070

-

-

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Modulus Dynamics

Lithuania . 19,968 parts In-Stock

1+ parts

$1.652

100+ parts

$1.586

1k+ parts

$1.520

10k+ parts

-

19,968

$1.652

$1.586

$1.520

-

AZTECH Wire

Italy . 1,173 parts In-Stock

1+ parts

$11.920

100+ parts

-

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1,173

$11.920

-

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Andel Nordic

Denmark . 481 parts In-Stock

1+ parts

$48.000

100+ parts

-

1k+ parts

$33.597

10k+ parts

$33.597

481

$48.000

-

$33.597

$33.597

Eastek

USA . 15,000 parts In-Stock

1+ parts

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100+ parts

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15,000

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RC Electronics

USA . 3,150 parts In-Stock

1+ parts

-

100+ parts

$0.110

1k+ parts

$0.100

10k+ parts

$0.100

3,150

-

$0.110

$0.100

$0.100

Overview

Discover the BCR523UE6327HTSA1 by Infineon Technologies, a high-quality Small Signal Bipolar Junction Transistor designed for switching applications. With its NPN configuration and built-in resistor, this transistor offers reliability and efficiency in various electronic circuits. Infineon Technologies, known for their cutting-edge technology, brings you a product that ensures optimal performance and durability. Whether you're a hobbyist or a professional, this transistor's versatility and ease of use make it an essential component for your projects. Upgrade your electronics with the BCR523UE6327HTSA1 and experience the difference in quality and precision.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good thermal stability and durability, making the transistor suitable for various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering versatility in applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Allows for flexibility in circuit design and saves space by integrating resistors within the transistor package.

Transistor Application: SWITCHING

Designed for efficient switching operations, making it ideal for use in various electronic devices and systems.

Surface Mount: YES

Enables easy and convenient PCB assembly, reducing manufacturing costs and enhancing overall product reliability.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, ensuring stability and reliability in demanding environments.

Maximum Collector-Emitter Voltage: 50 V

Suitable for low to medium voltage applications, providing adequate voltage handling capabilities.

Maximum Collector Current (IC): 0.5 A

Capable of handling moderate current levels, making it suitable for a wide range of circuit designs.

Nominal Transition Frequency (fT): 100 MHz

Offers high-frequency capabilities, making it suitable for high-speed switching applications and signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCR523UE6327HTSA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 10

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

70

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCR523UE6327HTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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