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BCR555E6327HTSA1

Infineon Technologies

BCR555E6327HTSA1 by Infineon Technologies

Infineon's BCR555E6327HTSA1 is a PNP BJT with built-in resistor for switching applications. Features include hFE of 70, VCE of 50V, and fT of 150MHz. Its Gull Wing terminals and small outline make it suitable for surface mount designs.

Median Price

$0.078

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 663,660 parts In-Stock

1+ parts

-

100+ parts

$0.084

1k+ parts

$0.070

10k+ parts

$0.062

663,660

-

$0.084

$0.070

$0.062

Verical

USA . 643,000 parts In-Stock

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-

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$0.078

643,000

-

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$0.078

Arrow

USA . 129,000 parts In-Stock

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-

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$0.040

129,000

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-

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$0.040

Distributors (In-Stock)

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Digiode

USA . 524 parts In-Stock

1+ parts

$0.044

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-

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524

$0.044

-

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EXC GmbH

Germany . 2,223 parts In-Stock

1+ parts

$0.054

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2,223

$0.054

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Nova Conductors

Japan . 100 parts In-Stock

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$0.097

100+ parts

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100

$0.097

-

-

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TME

Poland . 2,500 parts In-Stock

1+ parts

$1.480

100+ parts

$0.112

1k+ parts

$0.095

10k+ parts

$0.089

2,500

$1.480

$0.112

$0.095

$0.089

Schukat

Germany . 32,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.089

10k+ parts

$0.056

32,500

-

-

$0.089

$0.056

Chip Stock

USA . 26,648 parts In-Stock

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26,648

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Vyrian

USA . 9,962 parts In-Stock

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9,962

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NAC Semi

USA . 9,000 parts In-Stock

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$0.175

9,000

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$0.175

Bristol Electronics

USA . 3,552 parts In-Stock

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3,552

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Micros

Poland . 2,190 parts In-Stock

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$0.198

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2,190

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$0.198

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Partservice

France . 2,090 parts In-Stock

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$0.198

10k+ parts

$0.198

2,090

-

-

$0.198

$0.198

Micros sp.j. W. Kędra i J. Lic

Poland . 2,090 parts In-Stock

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$0.212

10k+ parts

$0.212

2,090

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$0.212

VNN

France . 50 parts In-Stock

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50

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Distributors (Availability)

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Ampacity Inc.

Singapore . 196,720 parts In-Stock

1+ parts

$0.034

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196,720

$0.034

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Semicontronic

India . 196,304 parts In-Stock

1+ parts

$0.034

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$0.033

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$0.033

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196,304

$0.034

$0.033

$0.033

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Corphita

USA . 919 parts In-Stock

1+ parts

$0.041

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919

$0.041

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Aranea Global

USA . 100 parts In-Stock

1+ parts

$0.095

100+ parts

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$0.091

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100

$0.095

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$0.091

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Continental Prestige Electronics

USA . 4,279 parts In-Stock

1+ parts

$0.097

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$0.095

4,279

$0.097

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$0.095

Argo Parts USA

USA . 1,239 parts In-Stock

1+ parts

$0.097

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$0.094

1,239

$0.097

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-

$0.094

Modulus Dynamics

Lithuania . 18,839 parts In-Stock

1+ parts

$0.982

100+ parts

$0.943

1k+ parts

$0.903

10k+ parts

-

18,839

$0.982

$0.943

$0.903

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Perfect Parts

USA . 578,415 parts In-Stock

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578,415

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RC Electronics

USA . 36,900 parts In-Stock

1+ parts

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$0.110

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$0.110

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$0.100

36,900

-

$0.110

$0.110

$0.100

Assy Fe

Spain . 3,340 parts In-Stock

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3,340

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Overview

Upgrade your electronic devices with the BCR555E6327HTSA1 from Infineon Technologies. With a reputation for producing high-quality components, Infineon delivers a small signal bipolar junction transistor that offers superior performance in switching applications. The PNP configuration and built-in resistor make this transistor a versatile choice for various projects. Experience the reliability and efficiency of Infineon's BCR555E6327HTSA1, providing you with the value and benefits you need for your next innovative design.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and thermal stability, making the transistor more reliable and durable.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching applications, making this transistor suitable for various switching tasks.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Built-in resistor simplifies the circuit design and saves external components, making it convenient for users.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in switching circuits.

Surface Mount: YES

Surface mount design allows for easier and more automated assembly processes, making it suitable for mass production.

Package Shape: RECTANGULAR

Rectangular shape provides better compatibility with modern PCB layouts and allows for efficient use of space on the circuit board.

No. of Terminals: 3

Having a small number of terminals simplifies the connection process and reduces the chances of error during assembly.

Minimum DC Current Gain (hFE): 70

High minimum current gain ensures stable and consistent amplification in the transistor's operating range.

Maximum Collector-Emitter Voltage: 50 V

With a high maximum voltage rating, this transistor can handle a wide range of voltage levels, providing versatility in applications.

Maximum Collector Current (IC): 0.5 A

Suitable for low to medium current applications, making it ideal for various small signal switching tasks.

Terminal Finish: TIN

Tin finish provides good conductivity and solderability, ensuring reliable electrical connections.

Nominal Transition Frequency (fT): 150 MHz

High transition frequency indicates good high-frequency performance, making it suitable for applications requiring fast switching speeds.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCR555E6327HTSA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO 0.22

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

70

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCR555E6327HTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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