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BCR523-E6327

Infineon Technologies

BCR523-E6327 by Infineon Technologies

BCR523-E6327 by Infineon Technologies is a NPN BJT with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, collector current of 0.5A, and transition frequency of 100MHz. This small outline transistor comes in a rectangular package with gull wing terminals for surface mount assembly.

Median Price

$0.201

Lifecycle Status

EOL

Suppliers In-Stock

16

In-Stock Inventory

1k+

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Digiode

USA . 685 parts In-Stock

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$0.332

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ComSIT Distribution GmbH

Germany . 105,649 parts In-Stock

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ComSIT USA

USA . 105,649 parts In-Stock

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Rutronik

Germany . 21,000 parts In-Stock

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$0.069

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LIBRA Elektronik GmbH

Germany . 12,199 parts In-Stock

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Vyrian

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R&J Components

USA . 3,000 parts In-Stock

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Pegasus Components GmbH

Germany . 2,858 parts In-Stock

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Ack Elektronik San.Tic.Ltd.Sti

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Resion

USA . 2,740 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1,500 parts In-Stock

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Bristol Electronics

USA . 1,500 parts In-Stock

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Dan-Mar Components

USA . 1,500 parts In-Stock

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Nova Conductors

Japan . 900 parts In-Stock

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Cyclops Electronics Ltd

UK . 30 parts In-Stock

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VNN

France . 10 parts In-Stock

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Semicontronic

India . 24,349 parts In-Stock

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$0.297

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$0.290

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$0.288

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Ampacity Inc.

Singapore . 12,319 parts In-Stock

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$0.297

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Corphita

USA . 359 parts In-Stock

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$0.315

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Modulus Dynamics

Lithuania . 21,693 parts In-Stock

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$0.811

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$0.779

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$0.746

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$0.779

$0.746

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Corohmni

South Africa . 1,014 parts In-Stock

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$1.889

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Perfect Parts

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A-Z Elektronik GmbH

Germany . 7,392 parts In-Stock

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Argo Parts USA

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Alle Elektronik GmbH

Germany . 3,938 parts In-Stock

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Continental Prestige Electronics

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Authorized Procurement Solutions

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Assy Fe

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Bastille Electronics

Australia . 800 parts In-Stock

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Kepictronics

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Overview

Upgrade your electronic devices with the reliable and high-quality BCR523-E6327 by Infineon Technologies. This NPN Small Signal Bipolar Junction Transistor with a built-in resistor is perfect for switching applications, offering maximum collector-emitter voltage of 50V and a peak reflow temperature of 260°C. With Infineon's reputation for top-notch manufacturing, you can trust in the superior performance and durability of this product. Experience seamless integration and enhanced functionality in your projects with the BCR523-E6327.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy makes this transistor lightweight and durable, ideal for portable electronic devices.

Polarity or Channel Type: NPN

Being NPN type, this transistor is suitable for amplifying and switching applications in circuits.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB.

Transistor Application: SWITCHING

Designed for switching applications, this transistor ensures efficient on/off control in electronic circuits.

Surface Mount: YES

Being surface mountable, this transistor is easy to assemble and saves valuable PCB space.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy placement and secure solder connections on the PCB.

Terminal Form: GULL WING

The gull wing terminal form provides strong mechanical support and easy soldering during assembly.

No. of Terminals: 3

With three terminals, this transistor offers flexible connectivity options in circuit designs.

Maximum Power Dissipation (Abs): 0.33 W

With a maximum power dissipation of 0.33 W, this transistor can handle moderate power loads effectively.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and allows for compact circuit designs.

Minimum DC Current Gain (hFE): 70

This transistor has a minimum DC current gain of 70, ensuring stable and reliable amplification in circuits.

Maximum Collector-Emitter Voltage: 50 V

With a maximum collector-emitter voltage of 50 V, this transistor is suitable for low to moderate voltage applications.

Transistor Element Material: SILICON

Made of silicon, this transistor offers high performance and reliability in electronic circuits.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5 A, this transistor can handle high current loads efficiently.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides excellent solderability and corrosion resistance for long-lasting connections.

Terminal Position: DUAL

The dual terminal position allows for easy and secure mounting on the PCB.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this transistor can withstand high-temperature soldering processes.

Nominal Transition Frequency (fT): 100 MHz

The high nominal transition frequency of 100 MHz ensures fast switching speeds and performance in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCR523-E6327 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 10

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

70

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCR523-E6327 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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