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BCR562E6327HTSA1

Infineon Technologies

BCR562E6327HTSA1 by Infineon Technologies

Infineon's BCR562E6327HTSA1 is a PNP BJT with built-in resistor for switching applications. It features hFE of 60, VCE of 50V, and fT of 150MHz. The transistor comes in a small outline package with Gull Wing terminals, making it suitable for surface mount designs.

Median Price

$0.151

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bürklin Elektronik

Germany . 8 parts In-Stock

1+ parts

$0.151

100+ parts

$0.118

1k+ parts

$0.086

10k+ parts

-

8

$0.151

$0.118

$0.086

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Mouser Electronics

USA . 2,021 parts In-Stock

1+ parts

$0.440

100+ parts

-

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10k+ parts

$0.430

2,021

$0.440

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-

$0.430

Adafruit Industries

USA . 100 parts In-Stock

1+ parts

$1.315

100+ parts

$1.197

1k+ parts

$1.078

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100

$1.315

$1.197

$1.078

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Arrow

USA . 30,000 parts In-Stock

1+ parts

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$0.051

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$0.051

Verical

USA . 18,000 parts In-Stock

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18,000

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Future Electronics

Canada . 3,000 parts In-Stock

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$0.038

3,000

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-

$0.038

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$0.103

100+ parts

-

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500

$0.103

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-

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Digiode

USA . 127 parts In-Stock

1+ parts

$0.143

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127

$0.143

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Chip Stock

USA . 48,800 parts In-Stock

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48,800

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NAC Semi

USA . 30,000 parts In-Stock

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30,000

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Schukat

Germany . 27,000 parts In-Stock

1+ parts

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$0.090

10k+ parts

$0.056

27,000

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-

$0.090

$0.056

Vyrian

USA . 15,034 parts In-Stock

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15,034

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VNN

France . 3,875 parts In-Stock

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3,875

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Rutronik

Germany . 3,000 parts In-Stock

1+ parts

-

100+ parts

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$0.066

3,000

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$0.066

Bristol Electronics

USA . 2,618 parts In-Stock

1+ parts

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2,618

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 12,065 parts In-Stock

1+ parts

$0.032

100+ parts

$0.031

1k+ parts

$0.031

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12,065

$0.032

$0.031

$0.031

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Ampacity Inc.

Singapore . 11,915 parts In-Stock

1+ parts

$0.032

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11,915

$0.032

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Aranea Global

USA . 500 parts In-Stock

1+ parts

$0.100

100+ parts

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$0.096

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500

$0.100

-

$0.096

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Continental Prestige Electronics

USA . 3,671 parts In-Stock

1+ parts

$0.103

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$0.100

3,671

$0.103

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-

$0.100

Argo Parts USA

USA . 1,220 parts In-Stock

1+ parts

$0.103

100+ parts

-

1k+ parts

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10k+ parts

$0.099

1,220

$0.103

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-

$0.099

Corphita

USA . 144 parts In-Stock

1+ parts

$0.136

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144

$0.136

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Corohmni

South Africa . 234 parts In-Stock

1+ parts

$0.484

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234

$0.484

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Aztec Data Supply Inc.

USA . 4,889 parts In-Stock

1+ parts

$0.636

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4,889

$0.636

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Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$1.315

100+ parts

$1.197

1k+ parts

$1.078

10k+ parts

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100

$1.315

$1.197

$1.078

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Modulus Dynamics

Lithuania . 25,536 parts In-Stock

1+ parts

$1.752

100+ parts

$1.682

1k+ parts

$1.612

10k+ parts

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25,536

$1.752

$1.682

$1.612

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Andel Nordic

Denmark . 328 parts In-Stock

1+ parts

$37.180

100+ parts

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$26.023

10k+ parts

$26.023

328

$37.180

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$26.023

$26.023

Perfect Parts

USA . 83,692 parts In-Stock

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83,692

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Glotronic Ltd.

UK . 16,800 parts In-Stock

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16,800

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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1,000

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Overview

Enhance your electronic devices with the BCR562E6327HTSA1 by Infineon Technologies. Crafted with precision and superior quality, this PNP small signal bipolar junction transistor is ideal for switching applications. With a built-in resistor and a maximum collector-emitter voltage of 50V, this transistor offers reliability and efficiency. Upgrade your circuit designs with ease using this surface-mountable component, boasting a minimum DC current gain of 60 and a nominal transition frequency of 150MHz. Trust in Infineon Technologies for cutting-edge technology that delivers optimal performance every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and excellent heat dissipation, making the transistor reliable for long-term use.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration with other PNP transistors and circuits, providing versatility in different circuit designs.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB, reducing overall component count and improving efficiency.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast switching speeds and high efficiency, ideal for use in various electronic devices.

Surface Mount: YES

Being surface mount compatible makes it easy to assemble on PCBs using automated manufacturing processes, saving time and effort during production.

Package Shape: RECTANGULAR

The rectangular shape of the package ensures easy placement on the PCB, optimizing space and allowing for efficient circuit layouts.

Terminal Form: GULL WING

The gull wing terminal form enables secure and reliable connections to the PCB, reducing the risk of damage during PCB assembly or operation.

No. of Terminals: 3

With three terminals, this transistor is easy to interface with other components and devices, offering flexibility in circuit designs and applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and allows for high component density, ideal for compact electronic designs and miniaturized devices.

Minimum DC Current Gain (hFE): 60

The high minimum DC current gain ensures stable and consistent amplification of signals, providing reliable performance in a variety of applications.

Maximum Collector-Emitter Voltage: 50 V

With a maximum collector-emitter voltage of 50V, this transistor can handle higher voltage levels, making it suitable for a wide range of voltage requirements.

Transistor Element Material: SILICON

Made of silicon, one of the most common semiconductor materials, this transistor offers high reliability, low leakage, and excellent performance characteristics.

Maximum Collector Current (IC): 0.5 A

Capable of handling a maximum collector current of 0.5A, this transistor is suitable for low to medium power applications, providing sufficient current-carrying capacity.

Terminal Finish: TIN

The tin terminal finish ensures good solderability and corrosion resistance, extending the lifespan of the transistor and maintaining stable electrical connections.

Terminal Position: DUAL

With dual terminal positions, this transistor offers flexibility in PCB layout and allows for different mounting orientations, simplifying the integration process.

Nominal Transition Frequency (fT): 150 MHz

The high nominal transition frequency of 150MHz indicates the fast response and high-speed performance of this transistor, ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCR562E6327HTSA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

60

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCR562E6327HTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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