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BCR573-E6327

Infineon Technologies

BCR573-E6327 by Infineon Technologies

BCR573-E6327 by Infineon Technologies is a PNP BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, collector current of 0.5A, and transition frequency of 150MHz. This surface-mount device comes in a small outline package with gull wing terminals.

Median Price

$0.340

Lifecycle Status

EOL

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

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Mouser Electronics

USA . 228 parts In-Stock

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$0.340

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$0.089

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$0.047

228

$0.340

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$0.089

$0.047

Distributors (In-Stock)

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Nova Conductors

Japan . 100 parts In-Stock

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$0.084

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100

$0.084

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American Microsemiconductor Inc.

USA . 12,000 parts In-Stock

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$0.280

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$0.280

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Digiode

USA . 274 parts In-Stock

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$0.323

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Rutronik

Germany . 15,000 parts In-Stock

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$0.071

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$0.071

ComSIT Distribution GmbH

Germany . 1,920 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 1,460 parts In-Stock

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VNN

France . 864 parts In-Stock

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Vyrian

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Argo Parts USA

USA . 4,158 parts In-Stock

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$0.084

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$0.081

4,158

$0.084

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$0.081

Continental Prestige Electronics

USA . 3,644 parts In-Stock

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$0.084

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$0.082

3,644

$0.084

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$0.082

Netroflash

USA . 2,000 parts In-Stock

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$0.084

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$0.079

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$0.078

2,000

$0.084

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$0.079

$0.078

Corphita

USA . 490 parts In-Stock

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$0.306

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490

$0.306

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Corohmni

South Africa . 403 parts In-Stock

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$0.573

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403

$0.573

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Ampacity Inc.

Singapore . 17 parts In-Stock

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$0.630

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$0.630

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Modulus Dynamics

Lithuania . 25,771 parts In-Stock

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$0.831

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$0.798

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$0.765

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25,771

$0.831

$0.798

$0.765

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AZTECH Wire

Italy . 329 parts In-Stock

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$8.494

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329

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Andel Nordic

Denmark . 6,235 parts In-Stock

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$25.370

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$17.761

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$17.761

6,235

$25.370

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$17.761

$17.761

Perfect Parts

USA . 98,683 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 29,416 parts In-Stock

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A-Z Elektronik GmbH

Germany . 11,432 parts In-Stock

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Kepictronics

USA . 6,000 parts In-Stock

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Metaverse IC Inc.

Canada . 6,000 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,442 parts In-Stock

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Microchip USA

USA . 2,766 parts In-Stock

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Overview

Looking for a reliable solution for your switching applications? Look no further than the BCR573-E6327 by Infineon Technologies. With its high-quality construction and built-in resistor, this PNP transistor offers unmatched performance and efficiency. Whether you're designing consumer electronics or industrial equipment, this small signal bipolar junction transistor is sure to meet your needs. Trust in the expertise of Infineon Technologies and experience the value and benefits that the BCR573-E6327 can bring to your projects. Upgrade your designs with this versatile and dependable component today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the transistor lightweight and durable, making it easier to handle and less likely to break during installation or transportation.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications, making this transistor suitable for various switching purposes.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and reduces the need for additional components, saving space and time during assembly.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers reliable performance and efficiency in switching circuits.

Surface Mount: YES

Being surface mountable, this transistor is easy to solder onto a circuit board, making it suitable for automated assembly processes.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for efficient use of space on the circuit board, making it ideal for compact designs.

No. of Terminals: 3

With only three terminals, this transistor is easy to integrate into circuits and reduces the chances of wiring errors.

Maximum Power Dissipation (Abs): 0.33 W

With a maximum power dissipation of 0.33W, this transistor can handle moderate power levels without overheating, ensuring long-term reliability.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board, making it suitable for applications where board real estate is limited.

Minimum DC Current Gain (hFE): 70

With a minimum DC current gain of 70, this transistor ensures consistent and stable amplification in circuits, enhancing overall performance.

Maximum Collector-Emitter Voltage: 50 V

The maximum collector-emitter voltage of 50V allows for reliable operation in circuits where higher voltage levels are required.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, ensuring the durability and efficiency of this product.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5A, this transistor can handle moderate current levels, making it suitable for a wide range of applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish offers good solderability and corrosion resistance, ensuring reliable connections in various operating conditions.

Terminal Position: DUAL

The dual terminal position allows for flexibility in circuit layouts and connections, making it easier to integrate this transistor into different designs.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this transistor can withstand high-temperature soldering processes without degradation, ensuring robust assembly.

Nominal Transition Frequency (fT): 150 MHz

The high nominal transition frequency of 150MHz indicates fast switching speeds and high-frequency performance, making this transistor suitable for demanding applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCR573-E6327 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 10

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

70

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCR573-E6327 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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