Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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NTP5411NG
Onsemi
NTP5411NG by Onsemi is a single N-channel FET with built-in diode for switching applications. It features a min DS breakdown voltage of 60V, max pulsed drain current of 185A, and max power dissipation of 166W. Ideal for high-power switching circuits in various electronic devices.
280 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
60 V
80 A
.01 ohm
METAL-OXIDE SEMICONDUCTOR
TO-220AB
R-PSFM-T3
e3
1
3
ENHANCEMENT MODE
175 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
260
N-CHANNEL
166 W
185 A
Not Qualified
FET General Purpose Power
NO
TIN
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
SPS02N60C3
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; Maximum Pulsed Drain Current (IDM): 5.4 A; Package Shape: RECTANGULAR;
AVALANCHE RATED
50 mJ
600 V
1.8 A
3 ohm
TO-251
R-PSIP-T3
IN-LINE
25 W
5.4 A
MATTE TIN
STP120NH03L
STMicroelectronics
STP120NH03L by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 60 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for high-efficiency power management in various electronic devices.
LOW THRESHOLD
700 mJ
30 V
60 A
.0105 ohm
245
115 W
240 A
40
STD2NK70Z-1
STD2NK70Z-1 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 700V breakdown voltage, 6.4A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
110 mJ
700 V
1.6 A
7 ohm
150 Cel
45 W
6.4 A
Matte Tin (Sn) - annealed
30
STP5NK90Z
STP5NK90Z by STMicroelectronics is an N-channel FET designed for switching applications, featuring a 900V breakdown voltage and a max drain current of 4.5A. It operates in enhancement mode with a power dissipation of up to 125W. Ideal for high-voltage circuits, it ensures reliable performance in compact designs.
230 mJ
900 V
4.5 A
2.5 ohm
125 W
18 A
Matte Tin (Sn)
NTD20N06L-1G
NTD20N06L-1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 20A Drain Current, and 0.048 ohm On Resistance. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it offers high performance in various power management systems.
128 mJ
20 A
.048 ohm
60 W
STB5NK52ZD-1
STB5NK52ZD-1 by STMicroelectronics is an N-channel FET designed for switching applications. It features a 520V breakdown voltage, 17.6A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic circuits.
170 mJ
520 V
4.4 A
1.5 ohm
TO-262AA
NOT SPECIFIED
70 W
17.6 A
STD5NK52ZD-1
STD5NK52ZD-1 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 4.4 A, a breakdown voltage of 520 V, and operates at up to 150 °C. Ideal for power management in various electronic devices.
TO-251AA
STD4NK50ZD-1
STD4NK50ZD-1 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 12A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic circuits.
120 mJ
500 V
3 A
2.7 ohm
12 A
STF4NK50ZD
STF4NK50ZD by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 500V breakdown voltage and a max drain current of 3A. It operates in enhancement mode with a power dissipation of up to 20W. This versatile transistor is suitable for various electronic circuits.
ISOLATED
20 W
STFV4N150
STFV4N150 by STMicroelectronics is an N-channel FET designed for switching applications. It features a 1500V breakdown voltage, 12A max pulsed drain current, and operates at up to 150 °C. Ideal for high-voltage power management in various electronic devices.
350 mJ
1500 V
4 A
40 W
STP4NK50ZD
STP4NK50ZD by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 500V breakdown voltage and 12A pulsed drain current. It operates in enhancement mode with a max power dissipation of 45W. This versatile transistor is suitable for high-temperature environments up to 150 °C.
STP75N20
STP75N20 by STMicroelectronics is a N-CHANNEL FET with 200V DS Breakdown Voltage, 300A IDM, and 0.034 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE. The transistor has a max power dissipation of 190W and operates at temperatures up to 150°C.
205 mJ
200 V
75 A
.034 ohm
190 W
300 A
STP8NM60D
STP8NM60D by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 600V breakdown voltage and 8A max drain current. It offers a low on-resistance of 1Ω and operates at up to 150 °C. This versatile FET is suitable for various power management tasks.
200 mJ
8 A
1 ohm
100 W
32 A
STW120NF10
STW120NF10 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage. It has 440A IDM and 550mJ EAS, ideal for SWITCHING applications. Operating in ENHANCEMENT MODE, it offers 0.0105 ohm Drain-Source On Resistance and can handle up to 312W power dissipation.
550 mJ
100 V
120 A
110 A
TO-247
312 W
440 A
STW12NK95Z
STW12NK95Z by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 950V breakdown voltage, 40A max pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
500 mJ
950 V
10 A
.9 ohm
TO-247AC
230 W
40 A
STW75N20
STW75N20 from STMicroelectronics is an N-channel FET ideal for switching applications, featuring a max drain current of 75 A and a breakdown voltage of 200 V. It has a low on-resistance of 0.034 Ω and operates up to 150 °C. This robust transistor is suitable for high-power circuits.
STP30N20
STP30N20 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 30 A, a breakdown voltage of 200 V, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
140 mJ
30 A
.075 ohm
STW30N20
STW30N20 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 30 A, a breakdown voltage of 200 V, and low on-resistance of 0.075 Ω. Ideal for power management in various electronic devices.
NTD18N06-1G
NTD18N06-1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 18A ID, and 0.06 ohm RDS. Ideal for SWITCHING applications, it features an ENHANCEMENT MODE operation and 54A IDM. The transistor has a PLASTIC/EPOXY body, RECTANGULAR shape, and operates at up to 175 °C.
72 mJ
.06 ohm
1.5 W
54 A
NTD4804N-1G
NTD4804N-1G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 230A IDM, and 0.0055 ohm RDS(on). Ideal for SWITCHING applications, it features an ENHANCEMENT MODE operation and 175 °C Max Temp. With a built-in diode, this N-CHANNEL transistor has a max power dissipation of 93.75W in a RECTANGULAR package.
450 mJ
117 A
14.5 A
.0055 ohm
93.75 W
230 A
NTD4809N-1G
NTD4809N-1G by Onsemi is a N-channel FET with 30V DS breakdown voltage and 130A IDM. Ideal for switching applications, it features 0.014 ohm max drain-source resistance and 91mJ EAS rating. Package style: IN-LINE, terminal finish: TIN, operating mode: ENHANCEMENT MODE.
91 mJ
9 A
.014 ohm
130 A
NTD4809N-35G
NTD4809N-35G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 130A IDM, and 0.014 ohm RDS(on). Ideal for SWITCHING applications, it features an N-CHANNEL configuration in PLASTIC/EPOXY package with built-in DIODE. Operating at up to 175 °C, this MOSFET has a peak reflow temp of 260°C and EAS of 91mJ.
NTD4805N-1G
NTD4805N-1G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 175A IDM, and 0.0074 ohm RDS(on). Ideal for SWITCHING applications, it features an ENHANCEMENT MODE operation and 79W Pdiss. The N-CHANNEL transistor has a SILICON element and operates at up to 175 °C.
288 mJ
95 A
12.6 A
.0074 ohm
79 W
175 A
NTD4808N-1G
NTD4808N-1G by Onsemi is a single N-channel power FET with built-in diode, ideal for switching applications. It features a min DS breakdown voltage of 30V, max pulsed drain current of 126A, and max operating temperature of 175 °C. With a package style of in-line and terminal finish of matte tin, it offers efficient performance in various electronic systems.
144.5 mJ
63 A
9.8 A
.0124 ohm
54.6 W
126 A
NTD4808N-35G
NTD4808N-35G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 126A IDM, and 0.0124 ohm RDS(on). Ideal for switching applications, it features an N-CHANNEL configuration with built-in diode. Operating in enhancement mode, this transistor has a max power dissipation of 54.6W and can handle up to 175°C operating temperature.
NTD4815N-1G
NTD4815N-1G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 87A IDM, and 0.025 ohm RDS(on). Ideal for SWITCHING applications, it features an N-CHANNEL configuration with a built-in DIODE. This METAL-OXIDE SEMICONDUCTOR device has a SILICON element and operates in ENHANCEMENT MODE.
60.5 mJ
6.9 A
.025 ohm
87 A
NTD4815N-35G
NTD4815N-35G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 35A ID, and 0.025 ohm RDS(on). Ideal for switching applications, it features an IDM of 87A and EAS of 60.5mJ. Operating in enhancement mode at up to 175 °C, this N-channel transistor has a max power dissipation of 32.6W.
35 A
32.6 W
STD90N02L-1
STD90N02L-1 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 60 A, a breakdown voltage of 25 V, and operates at up to 175 °C. Ideal for high-power circuits with low on-resistance (0.006 Ω).
360 mJ
25 V
.006 ohm
NTD4906N-1G
NTD4906N-1G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 30V DS Breakdown Voltage, 223A IDM, and 0.008 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 37.5W at 175 °C, making it ideal for high-power switching circuits.
48 mJ
14 A
.008 ohm
37.5 W
223 A
FET General Purpose Powers
NTD4906N-35G
NTD4906N-35G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 223A IDM, and 0.008 ohm RDS. Ideal for SWITCHING applications, it features an N-CHANNEL configuration in a PLASTIC/EPOXY package with built-in DIODE. Operating in ENHANCEMENT MODE, it has a max power dissipation of 37.5W at 175 °C max temp.
NTD4909N-1G
NTD4909N-1G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 167A IDM, and 0.012 ohm RDS(on). Ideal for SWITCHING applications, it features an N-CHANNEL configuration in PLASTIC/EPOXY package with BUILT-IN DIODE. Operating in ENHANCEMENT MODE at up to 175 °C, this transistor has a SILICON element and METAL-OXIDE SEMICONDUCTOR technology.
28 mJ
8.8 A
.012 ohm
167 A
NTD4909N-35G
NTD4909N-35G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 41A Drain Current, and 0.012 ohm On Resistance. Ideal for SWITCHING applications due to its 167A Pulsed Drain Current and 29.4W Power Dissipation capabilities in ENHANCEMENT MODE operation.
41 A
29.4 W
NTD4910N-35G
NTD4910N-35G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 152A IDM, and 0.013 ohm RDS(on). Ideal for SWITCHING applications, it features an ENHANCEMENT MODE operation and METAL-OXIDE SEMICONDUCTOR technology. With a max operating temp of 175 °C, this N-CHANNEL transistor has a built-in DIODE in a RECTANGULAR package.
25.3 mJ
8.2 A
.013 ohm
152 A
IPP065N04NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 68 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): 50 A;
40 V
50 A
.0065 ohm
68 W
350 A
NTD6416ANL-1G
NTD6416ANL-1G by Onsemi is a Power FET with 100V DS Breakdown Voltage, 70A IDM, and 0.074 ohm RDS(on). Ideal for switching applications, it features an N-CHANNEL configuration in a PLASTIC/EPOXY package with built-in diode. Operating in enhancement mode at up to 175 °C, this MOSFET has a 50mJ EAS rating.
19 A
.074 ohm
70 A
NTP6411ANG
NTP6411ANG by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, 285A IDM, and 0.014 ohm RDS. It's used in power applications due to its 217W Pdiss, 470mJ EAS rating, and -55 °C to +175°C operating temp range.
470 mJ
77 A
72 A
217 W
285 A
NTP6412ANG
NTP6412ANG by Onsemi is a single N-channel Power FET with a built-in diode, featuring a min DS breakdown voltage of 100V and max pulsed drain current of 240A. Ideal for applications requiring high power dissipation, such as in automotive or industrial settings.
300 mJ
58 A
.0182 ohm
167 W
NTP6448ANG
NTP6448ANG by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, 305A IDM, and 0.013 ohm RDS(on). Ideal for power applications requiring high drain current handling. Suitable for use in enhancement mode operation at up to 175 °C temperature.
76 A
188 W
305 A
STI76NF75
STI76NF75 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 75 V, and operates at up to 175 °C. Ideal for high-power circuits with low on-resistance (0.011 Ω).
75 V
.011 ohm
300 W
320 A
STF11NM50N
STF11NM50N by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 500V breakdown voltage and 36A pulsed drain current. It operates in enhancement mode with a max power dissipation of 25W. Its compact design ensures efficient thermal management in various electronic circuits.
150 mJ
.47 ohm
36 A
STF18N55M5
STF18N55M5 from STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 550V breakdown voltage, 52A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
ULTRA-LOW RESISTANCE
550 V
13 A
.24 ohm
52 A
STF26NM60N-H
STF26NM60N-H by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, 80A IDM, and 0.165 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Features include 610mJ EAS, 30W Pdiss, and operating up to 150°C.
610 mJ
.165 ohm
30 W
STF5N52K3
STF5N52K3 by STMicroelectronics is an N-channel FET designed for switching applications, featuring a 525V breakdown voltage and a max drain current of 4.4A. It operates in enhancement mode with a power dissipation of 25W. Ideal for high-temperature environments, it supports efficient circuit designs.
525 V
STFW6N120K3
STFW6N120K3 from STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a 1200V breakdown voltage, 20A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
180 mJ
1200 V
5 A
6 A
2.4 ohm
STP11NM50N
STP11NM50N by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 500V breakdown voltage, 36A pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
STP120N4F6
STP120N4F6 by STMicroelectronics is a N-CHANNEL FET with 40V DS Breakdown Voltage, 320A IDM, and 0.0043 ohm RDS(on). Ideal for SWITCHING applications due to its 110W power dissipation and ENHANCEMENT MODE operation. The transistor features a SINGLE configuration with built-in diode in a PLASTIC/EPOXY package.
394 mJ
.0043 ohm
110 W
STP165N10F4
STP165N10F4 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 120 A, a breakdown voltage of 100 V, and operates at up to 175 °C. Ideal for high-efficiency power management in various electronic devices.
.0051 ohm
315 W
480 A
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