Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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STP7NK30Z
STMicroelectronics
STP7NK30Z by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 300V breakdown voltage, 20A pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
130 mJ
SINGLE WITH BUILT-IN DIODE
300 V
5 A
.9 ohm
METAL-OXIDE SEMICONDUCTOR
TO-220AB
R-PSFM-T3
e3
1
3
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
50 W
20 A
Not Qualified
FET General Purpose Power
NO
MATTE TIN
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
STY60NK30Z
STY60NK30Z by STMicroelectronics is a N-CHANNEL FET with 300V DS Breakdown Voltage, ideal for SWITCHING applications. It features 240A IDM and 0.045 ohm RDS(on), operating in ENHANCEMENT MODE at up to 150°C. The transistor comes in a RECTANGULAR package with Matte Tin finish, offering high power dissipation of 450W.
700 mJ
60 A
.045 ohm
R-PSIP-T3
IN-LINE
450 W
240 A
Matte Tin (Sn)
STE48NM60
STE48NM60 by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 600V breakdown voltage and max drain current of 48A. It supports high power dissipation up to 450W and operates at a max temp of 150 °C. Perfect for efficient power management in various electronic devices.
850 mJ
ISOLATED
600 V
30 A
48 A
.11 ohm
R-XUFM-X4
4
UNSPECIFIED
192 A
UPPER
STF20NM60D
STF20NM60D by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 80A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
.29 ohm
45 W
80 A
FQH140N10
Fairchild Semiconductor
FQH140N10 by Fairchild Semiconductor is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, 560A IDM, and 0.01 ohm RDS(on). Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 375W and can handle up to 175°C temperature.
1500 mJ
100 V
140 A
.01 ohm
TO-247
175 Cel
375 W
560 A
STF3HNK90Z
STF3HNK90Z by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 900V breakdown voltage and 12A pulsed drain current. It operates in enhancement mode with a max power dissipation of 25W. This robust transistor ensures reliable performance in high-temperature environments up to 150 °C.
200 mJ
900 V
3 A
4.2 ohm
25 W
12 A
STP3HNK90Z
STP3HNK90Z by STMicroelectronics is an N-channel FET designed for switching applications, featuring a 900V breakdown voltage and a max drain current of 3A. It operates in enhancement mode with a power dissipation of up to 90W. Ideal for high-voltage circuits, it ensures reliable performance in compact designs.
90 W
STW18NK80Z
STW18NK80Z by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 19 A, breakdown voltage of 800 V, and power dissipation up to 350 W. Ideal for high-voltage circuits, it ensures reliable performance in demanding environments.
800 V
19 A
.38 ohm
350 W
76 A
STW13NK80Z
STW13NK80Z by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a max drain current of 12 A and a breakdown voltage of 800 V. It operates in enhancement mode with a power dissipation of up to 230 W. This versatile transistor is suitable for high-voltage circuits.
450 mJ
.65 ohm
230 W
STF9NK60ZD
STF9NK60ZD by STMicroelectronics is an N-channel FET designed for switching applications, featuring a 600V breakdown voltage and a max drain current of 7A. It operates in enhancement mode with a power dissipation of up to 32W. Ideal for high-voltage circuits, it ensures reliable performance in compact designs.
235 mJ
7 A
.95 ohm
32 W
28 A
STP9NK60ZD
STP9NK60ZD by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. It features 28A max pulsed drain current and 235mJ avalanche energy rating. The transistor operates in enhancement mode with 0.95 ohm max on-resistance, suitable for high-power applications up to 104W at 150°C.
104 W
STF42N65M5
STF42N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, 132A IDM, and 0.079 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with ISOLATED case connection.
950 mJ
650 V
33 A
.079 ohm
40 W
132 A
STF7N95K3
STF7N95K3 by STMicroelectronics is a N-CHANNEL FET with 950V DS Breakdown Voltage, 28.8A IDM, and 220mJ EAS. Ideal for SWITCHING applications due to its 35W Max Power Dissipation and ENHANCEMENT MODE operation at up to 150°C.
220 mJ
950 V
7.2 A
1.35 ohm
35 W
28.8 A
STI42N65M5
STI42N65M5 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 650V breakdown voltage, 33A max drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
TO-262AA
190 W
STW70N10F4
STW70N10F4 from STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a max drain current of 65 A and a breakdown voltage of 100 V. It offers low on-resistance at 0.0195 Ω and operates up to 175 °C. Its robust design ensures reliable performance in demanding environments.
120 mJ
65 A
.0195 ohm
150 W
260 A
STP185N10F3
STP185N10F3 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 120 A, breakdown voltage of 100 V, and power dissipation up to 300 W. Ideal for high-efficiency power management in various electronic devices.
120 A
.0048 ohm
300 W
480 A
STP75NF68
STP75NF68 by STMicroelectronics is a powerful N-channel FET designed for high-efficiency applications. It supports a max drain current of 80 A and power dissipation of 190 W, operating up to 175 °C. Ideal for switching and amplification in various electronic circuits.
STB5NK50Z-1
STB5NK50Z-1 by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 500V breakdown voltage and 17.6A max pulsed drain current. It operates in enhancement mode with a power dissipation of up to 70W. This versatile transistor is suitable for various electronic circuits.
500 V
4.4 A
1.5 ohm
70 W
17.6 A
STP20NM60A
STP20NM60A by STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 600V breakdown voltage, 20A max drain current, and 192W power dissipation. This versatile component is suitable for high-efficiency power management solutions.
192 W
STP80NF06
STP80NF06 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 80 A, a breakdown voltage of 60 V, and operates at up to 175 °C. Ideal for high-efficiency power management in various electronic devices.
LOW THRESHOLD
870 mJ
60 V
.008 ohm
320 A
STW80NF06
STW80NF06 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 80 A, a breakdown voltage of 60 V, and operates at up to 175 °C. Ideal for high-efficiency power management in various electronic devices.
TO-247AA
245
NOT SPECIFIED
STE30NK90Z
STE30NK90Z by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 900V breakdown voltage and 30A max drain current. It offers a low on-resistance of 0.26Ω and operates up to 150 °C. This robust FET is suitable for high-power circuits.
HIGH VOLTAGE
500 mJ
.26 ohm
R-PUFM-X4
600 W
112 A
NICKEL
STE45NK80ZD
STE45NK80ZD from STMicroelectronics is a powerful N-channel MOSFET designed for efficient switching applications. It features an 800V breakdown voltage, 180A pulsed drain current, and a max power dissipation of 600W. Ideal for high-performance power management in various electronic devices.
1200 mJ
45 A
.13 ohm
180 A
STY30NK90Z
STY30NK90Z by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 900V breakdown voltage and 26A max drain current. It offers a built-in diode and operates in enhancement mode with a power dissipation of 450W. This robust transistor is suitable for high-temperature environments up to 150 °C.
26 A
104 A
STE40NK90ZD
STE40NK90ZD from STMicroelectronics is a powerful N-channel FET designed for switching applications, featuring a 900V breakdown voltage and 40A max drain current. It offers high efficiency with a low on-resistance of 0.18Ω and can handle up to 600W power dissipation. Ideal for robust power management in various electronic devices.
40 A
.18 ohm
160 A
STW30NM60D
STW30NM60D by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 30A max drain current, and 280W power dissipation. Ideal for high-efficiency power management in various electronic devices.
740 mJ
.145 ohm
TO-247AC
280 W
FQP90N10V2
FQP90N10V2 by Fairchild Semiconductor is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 360A IDM and 0.01 ohm RDS(on). Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 250W and can withstand temperatures up to 175°C.
2430 mJ
90 A
250 W
360 A
STP6NK50Z
STP6NK50Z by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 500V breakdown voltage and a max drain current of 5.6A. It operates in enhancement mode with a power dissipation of up to 90W. This versatile transistor is suitable for high-temperature environments, reaching up to 150 °C.
180 mJ
5.6 A
1.2 ohm
22.4 A
STW18NK60Z
STW18NK60Z by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 16A max drain current, and 230W power dissipation. Ideal for high-efficiency power management in various electronic devices.
400 mJ
16 A
.36 ohm
64 A
STW29NK50ZD
STW29NK50ZD by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 500V breakdown voltage, 29A max drain current, and 378W power dissipation. Ideal for high-efficiency power management in various electronic devices.
29 A
378 W
116 A
STP62NS04Z
STP62NS04Z by STMicroelectronics is a N-CHANNEL FET with 33V DS Breakdown Voltage, ideal for SWITCHING applications. It features 248A IDM, 500mJ EAS, and 0.015 ohm RDS(ON). With a max power dissipation of 110W and operating temperature of 175°C, it offers reliable performance in various electronic systems.
DRAIN
33 V
62 A
.015 ohm
110 W
248 A
NTD40N03R-1G
Onsemi
NTD40N03R-1G by Onsemi is a power FET with a min DS breakdown voltage of 25V and max drain current of 32A. It is commonly used for switching applications due to its single configuration with built-in diode.
25 V
32 A
.023 ohm
260
41.7 W
100 A
TIN
NTD70N03R-1G
NTD70N03R-1G by Onsemi is a Power FET with N-CHANNEL configuration, ideal for SWITCHING applications. It features a Min DS Breakdown Voltage of 25V, Max Pulsed Drain Current of 140A, and Max Operating Temperature of 150 °C. The transistor has a Max Drain Current of 32A and Max Drain-Source On Resistance of 0.013 ohm.
71.7 mJ
62.8 A
.013 ohm
1.56 W
STB200NF04-1
STB200NF04-1 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 120 A, breakdown voltage of 40 V, and power dissipation up to 310 W. Ideal for high-efficiency circuits in demanding environments.
1300 mJ
40 V
.0037 ohm
310 W
STP200NF04
STP200NF04 from STMicroelectronics is a powerful N-channel FET ideal for switching applications. It features a max drain current of 120 A, breakdown voltage of 40 V, and power dissipation up to 310 W. Its robust design ensures reliability in demanding environments.
STP2NK60Z
STP2NK60Z by STMicroelectronics is an N-channel FET ideal for switching applications. It features a 600V breakdown voltage, 1.5A max drain current, and operates at up to 150 °C. This versatile transistor is suitable for various power management tasks in electronic circuits.
90 mJ
1.4 A
1.5 A
8 ohm
6 A
STQ2NK60ZR-AP
STQ2NK60ZR-AP by STMicroelectronics is an N-channel FET designed for switching applications. It features a 600V breakdown voltage, 1.6A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
.4 A
TO-92
O-PBCY-T3
ROUND
CYLINDRICAL
3 W
1.6 A
BOTTOM
STW43NM60ND
STW43NM60ND from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 140A pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
1000 mJ
35 A
.088 ohm
255 W
STP80NF03L
STP80NF03L by STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a max drain current of 80 A, a breakdown voltage of 30 V, and low on-resistance of 0.0065 Ω. This robust FET operates efficiently up to 175 °C.
2300 mJ
30 V
.0065 ohm
SPI08N80C3
Infineon Technologies
Infineon's SPI08N80C3 is a N-CHANNEL FET with 800V DS breakdown voltage, ideal for SWITCHING applications. It features 24A IDM, 340mJ EAS, and 0.65 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with max temp of 150°C, making it suitable for high-power circuits.
AVALANCHE RATED, HIGH VOLTAGE
340 mJ
8 A
24 A
IPI032N06N3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 188 W; Maximum Drain Current (Abs) (ID): 120 A; Package Style (Meter): IN-LINE;
.0032 ohm
188 W
IPI90R800C3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 104 W; JEDEC-95 Code: TO-262AA; JESD-30 Code: R-PSIP-T3;
157 mJ
6.9 A
.8 ohm
15 A
STF30NM50N
STF30NM50N by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 500V breakdown voltage and 27A max drain current. It operates in enhancement mode with a low on-resistance of 0.115Ω. This robust transistor supports high power dissipation up to 40W.
900 mJ
27 A
.115 ohm
108 A
STF35N65M5
STF35N65M5 from STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 650V breakdown voltage, 27A max drain current, and 40W power dissipation. This robust FET operates efficiently in high-temperature environments up to 150 °C.
800 mJ
.098 ohm
STF8NM60ND
STF8NM60ND by STMicroelectronics is an N-channel FET designed for switching applications, featuring a 600V breakdown voltage and a max drain current of 7A. It operates in enhancement mode with a power dissipation of 25W. Ideal for high-efficiency power management solutions.
.7 ohm
STI35N65M5
STI35N65M5 by STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 650V breakdown voltage, 27A max drain current, and 160W power dissipation. Its robust design ensures reliability in high-temperature environments up to 150 °C.
160 W
STP16N65M5
STP16N65M5 from STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 650V breakdown voltage, 12A max drain current, and 90W power dissipation. This robust transistor operates efficiently in high-temperature environments up to 150 °C.
ULTRA-LOW RESISTANCE
.279 ohm
STP190N55LF3
STP190N55LF3 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 120 A, a breakdown voltage of 55 V, and operates at up to 175 °C. Ideal for high-efficiency power management in various electronic devices.
55 V
.0045 ohm
312 W
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