Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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PSMN009-100W,127
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Qualification: Not Qualified;
650 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
100 V
100 A
.009 ohm
METAL-OXIDE SEMICONDUCTOR
TO-247
R-PSFM-T3
e3
1
3
ENHANCEMENT MODE
175 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
300 W
300 A
Not Qualified
FET General Purpose Power
NO
MATTE TIN
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
PSMN020-150W,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Drain-Source On Resistance: .02 ohm; JESD-30 Code: R-PSFM-T3;
707 mJ
150 V
73 A
.02 ohm
290 A
PSMN040-200W,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Avalanche Energy Rating (EAS): 661 mJ; JESD-609 Code: e3;
661 mJ
200 V
50 A
.04 ohm
200 A
2SJ673-AZ
Renesas Electronics
P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 32 W; Maximum Operating Temperature: 150 Cel; No. of Elements: 1;
36 A
150 Cel
260
P-CHANNEL
32 W
Other Transistors
10
2SK3755-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 24 W; Peak Reflow Temperature (C): 260; Maximum Drain Current (Abs) (ID): 45 A;
45 A
24 W
2SK3793-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; No. of Elements: 1; Maximum Time At Peak Reflow Temperature (s): 10;
12 A
20 W
NTD4863NA-1G
Onsemi
Onsemi's NTD4863NA-1G is a Power FET with 25V DS Breakdown Voltage, 98A IDM, and 0.014 ohm RDS(on). Ideal for SWITCHING applications, it features N-CHANNEL polarity, SINGLE configuration with BUILT-IN DIODE. Package: PLASTIC/EPOXY RECTANGULAR IN-LINE with THROUGH-HOLE terminals.
60.5 mJ
25 V
9.2 A
.014 ohm
R-PSIP-T3
IN-LINE
98 A
Tin (Sn)
STI150N10F7
STMicroelectronics
STI150N10F7 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 110 A, a breakdown voltage of 100 V, and operates at temperatures from -55 °C to 175 °C. Ideal for high-power circuits, it ensures reliable performance with low on-resistance.
495 mJ
110 A
.0042 ohm
67 pF
TO-262AA
-55 Cel
NOT SPECIFIED
250 W
440 A
STP5N60M2
STP5N60M2 from STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 600V breakdown voltage and 3.5A max drain current. It operates in enhancement mode with a max power dissipation of 45W. Its compact design ensures efficient thermal management in various electronic circuits.
AVALANCHE ENERGY RATED
80 mJ
600 V
3.5 A
1.4 ohm
.75 pF
TO-220AB
45 W
14 A
85 ns
15 ns
STF10NM65N
STF10NM65N by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 650V breakdown voltage and 36A pulsed drain current. It operates in enhancement mode with a max power dissipation of 25W. Its compact design ensures efficient thermal management in various electronic circuits.
300 mJ
ISOLATED
650 V
9 A
.48 ohm
25 W
STF14NM65N
STF14NM65N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 650V breakdown voltage, 12A max drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
.38 ohm
30 W
48 A
STF24NM65N
STF24NM65N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 650V breakdown voltage, 76A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
500 mJ
19 A
.19 ohm
40 W
76 A
STI24NM65N
STI24NM65N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 650V breakdown voltage, 76A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
160 W
Matte Tin (Sn)
STP10NM65N
STP10NM65N by STMicroelectronics is a powerful N-channel MOSFET designed for efficient switching applications. It features a 650V breakdown voltage, 36A pulsed drain current, and operates at up to 150 °C. Ideal for high-performance power management in various electronic devices.
90 W
STP14NM65N
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Terminal Finish: Matte Tin (Sn); Transistor Element Material: SILICON;
125 W
STP24NM65N
STP24NM65N by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 76A IDM, 500mJ EAS, and 0.19 ohm RDS(on). Package style is FLANGE MOUNT with SILICON element material and TIN terminal finish.
TIN
STU10NM65N
STU10NM65N by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 650V breakdown voltage and 36A pulsed drain current. It operates in enhancement mode with a max power dissipation of 90W. This versatile FET is suitable for high-efficiency power management.
TO-251AA
Matte Tin (Sn) - annealed
30
STW14NM65N
STW14NM65N by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 650V breakdown voltage, 12A max drain current, and 125W power dissipation. Ideal for high-efficiency circuits in various electronic devices.
STW24NM65N
STW24NM65N by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 650V breakdown voltage, 76A max pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
STW75NF30
STW75NF30 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 60 A, breakdown voltage of 300 V, and power dissipation up to 320 W. Ideal for high-efficiency power management in various electronic devices.
300 V
60 A
.045 ohm
TO-247AD
320 W
240 A
NDF06N60ZG
NDF06N60ZG by Onsemi is a Power FET with 600V DS Breakdown Voltage, 28A IDM, and 113mJ EAS. Ideal for power applications requiring high voltage tolerance and current handling capabilities. Suitable for use in industrial equipment, power supplies, and motor control systems due to its robust design and performance.
113 mJ
7.1 A
1.2 ohm
35 W
28 A
NDF10N60ZG
NDF10N60ZG by Onsemi is a Power FET with 600V DS Breakdown Voltage, 40A IDM, and 0.75 ohm RDS(on). Ideal for power applications requiring high voltage tolerance and low on-resistance. Suitable for use in enhancement mode operation at up to 150°C temperature.
10 A
6 A
.75 ohm
39 W
40 A
FET General Purpose Powers
NTD5867NL-1G
NTD5867NL-1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 76A IDM, and 0.05 ohm RDS. Ideal for applications requiring high power dissipation up to 36W in enhancement mode operation. Suitable for various electronic devices due to its N-channel configuration and built-in diode feature.
AVALANCHE RATED
18 mJ
60 V
20 A
.05 ohm
36 W
20.6 ns
19.1 ns
STF13NM60N-H
STF13NM60N-H from STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 600V breakdown voltage and 11A max drain current. It offers a low on-resistance of 0.36Ω and operates at up to 150 °C. This versatile FET is packaged in a flange mount design for easy integration.
200 mJ
11 A
.36 ohm
44 A
STW21N90K5
STW21N90K5 by STMicroelectronics is a N-CHANNEL FET with 900V DS Breakdown Voltage, ideal for SWITCHING applications. It features 68A IDM, 170mJ EAS, and 0.299 ohm RDS(ON). The transistor operates in ENHANCEMENT MODE with 210W Pd max and can withstand up to 150°C.
170 mJ
900 V
17 A
.299 ohm
210 W
68 A
SUP85N10-10P-GE3
Vishay Intertechnology
Vishay Intertechnology's SUP85N10-10P-GE3 is a N-channel Power FET with 100V DS breakdown voltage and 240A max pulsed drain current. Ideal for high-power applications, it features a built-in diode, 0.01 ohm max RDS(on), and 180mJ avalanche energy rating.
180 mJ
85 A
.01 ohm
227 W
IPI200N15N3G
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Package Shape: RECTANGULAR; JESD-609 Code: e3;
150 W
MTP20N15E
MTP20N15E by Onsemi is a N-CHANNEL Power FET with 150V DS Breakdown Voltage and 60A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has a max power dissipation of 112W at 150 °C.
60 mJ
.13 ohm
e0
235
112 W
TIN LEAD
NTD3055-094-1
NTD3055-094-1 by Onsemi is a Power FET with 60V DS Breakdown Voltage, 45A IDM, and 0.094 ohm RDS(on). Ideal for switching applications, it features an N-channel configuration in a plastic/epoxy package with built-in diode. Operating in enhancement mode, this MOSFET has a max power dissipation of 1.5W at 175 °C.
61 mJ
.094 ohm
1.5 W
NTP75N06L
NTP75N06L by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 225A IDM, and 0.011 ohm RDS. It's used for SWITCHING applications due to its 214W Pdiss, 175 °C Temp, and EAS of 844mJ.
844 mJ
75 A
.011 ohm
214 W
225 A
NTP75N06
NTP75N06 by Onsemi is a Power FET with N-CHANNEL polarity, ideal for SWITCHING applications. It features a 60V DS Breakdown Voltage, 225A Pulsed Drain Current, and 0.0095 ohm Drain-Source On Resistance. The transistor operates in ENHANCEMENT MODE with a max temperature of 175 °C.
.0095 ohm
2.4 W
NTP27N06
NTP27N06 by Onsemi is a power FET with 60V DS breakdown voltage, 80A IDM, and 0.046 ohm RDS(on). Ideal for switching applications, it features an N-channel configuration with built-in diode. Operating in enhancement mode, this MOSFET has a max power dissipation of 88.2W and can withstand temperatures up to 175 °C.
109 mJ
27 A
.046 ohm
88.2 W
80 A
NTP45N06L
NTP45N06L by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 150A IDM, and 0.028 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it has a max power dissipation of 2.4W at 175 °C.
LOGIC LEVEL COMPATIBLE
240 mJ
.028 ohm
150 A
NTP45N06
NTP45N06 by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 45A Drain Current, and 0.026 ohm On Resistance. Ideal for SWITCHING applications due to its 150A Pulsed Drain Current and 125W Power Dissipation capabilities in ENHANCEMENT MODE operation.
.026 ohm
NTP60N06L
NTP60N06L by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 180A IDM, and 0.016 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it offers high power dissipation of 150W and can withstand temperatures up to 175 °C.
454 mJ
.016 ohm
180 A
Tin/Lead (Sn/Pb)
NTP60N06
NTP60N06 by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 180A IDM, and 0.014 ohm RDS. It's used for SWITCHING applications due to its 150W Pdiss, ENHANCEMENT MODE operation, and METAL-OXIDE SEMICONDUCTOR technology.
NTP75N03L09
NTP75N03L09 by Onsemi is a Power FET with 30V DS Breakdown Voltage, 225A IDM, and 0.008 ohm RDS(on). It's an N-CHANNEL transistor for SWITCHING applications. The package is RECTANGULAR with THROUGH-HOLE terminals, suitable for ENHANCEMENT MODE operation up to 150 °C.
1500 mJ
30 V
.008 ohm
STW14NM50
STW14NM50 by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 500V breakdown voltage and 14A max drain current. It offers a low on-resistance of 0.35Ω and can handle up to 175W power dissipation. Its robust design ensures reliability in high-temperature environments (up to 150 °C).
ULTRA-LOW RESISTANCE
400 mJ
500 V
.35 ohm
175 W
56 A
SPI100N03S2L-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Terminal Position: SINGLE; Qualification: Not Qualified;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
810 mJ
.0037 ohm
400 A
SPP100N03S2-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Minimum DS Breakdown Voltage: 30 V; Qualification: Not Qualified;
.0033 ohm
SPP100N03S2L-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Package Body Material: PLASTIC/EPOXY; Transistor Element Material: SILICON;
SPP42N03S2L-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 64 W; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
110 mJ
42 A
.0199 ohm
64 W
248 A
SPP77N06S2-12
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 140 W; JESD-30 Code: R-PSFM-T3; Maximum Drain Current (ID): 80 A;
280 mJ
55 V
77 A
.012 ohm
140 W
320 A
SPP80N04S2-H4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 175 Cel;
660 mJ
40 V
.004 ohm
SPP80N06S2-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; No. of Elements: 1; Maximum Operating Temperature: 175 Cel;
530 mJ
.0066 ohm
SPP80N06S2-09
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 190 W; Additional Features: AVALANCHE RATED; Maximum Drain-Source On Resistance: .0091 ohm;
370 mJ
.0091 ohm
190 W
SPP80N06S2L-06
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Qualification: Not Qualified; Maximum Drain-Source On Resistance: .0084 ohm;
.0084 ohm
SPP80N06S2L-09
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 190 W; Avalanche Energy Rating (EAS): 370 mJ; Maximum Pulsed Drain Current (IDM): 320 A;
.0113 ohm
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