Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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STP30NM50N
STMicroelectronics
STP30NM50N from STMicroelectronics is a powerful N-channel FET ideal for switching applications. It features a 500V breakdown voltage, 27A max drain current, and 190W power dissipation. Its robust design suits high-performance power management systems.
900 mJ
ISOLATED
SINGLE WITH BUILT-IN DIODE
500 V
27 A
.115 ohm
METAL-OXIDE SEMICONDUCTOR
TO-220AB
R-PSFM-T3
e3
1
3
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
190 W
108 A
Not Qualified
FET General Purpose Power
NO
Matte Tin (Sn)
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
STP35N65M5
STP35N65M5 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 650V breakdown voltage, 27A max drain current, and 160W power dissipation. Ideal for high-efficiency power management in various electronic devices.
800 mJ
650 V
.098 ohm
160 W
MATTE TIN
STP8NM60ND
STP8NM60ND by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a 600V breakdown voltage, 28A pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
200 mJ
600 V
7 A
.7 ohm
70 W
28 A
STU16N65M5
STU16N65M5 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 650V breakdown voltage, 12A max drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
ULTRA-LOW RESISTANCE
12 A
.279 ohm
TO-251
R-PSIP-T3
IN-LINE
260
90 W
48 A
30
STW30NM50N
STW30NM50N by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 500V breakdown voltage and 27A max drain current. It offers a low on-resistance of 0.115Ω and operates at up to 150 °C. Its robust design ensures reliable performance in demanding environments.
TO-247AC
STW35N65M5
STW35N65M5 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 650V breakdown voltage, 27A max drain current, and 160W power dissipation. Ideal for high-efficiency power management in various electronic devices.
TO-247
STY130NF20D
STY130NF20D from STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a max drain current of 130 A, breakdown voltage of 200 V, and power dissipation up to 450 W. Ideal for high-performance power management in various electronic devices.
200 V
130 A
.012 ohm
450 W
520 A
NTD3055-094-1G
Onsemi
NTD3055-094-1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 45A IDM, and 0.094 ohm RDS. It is an N-CHANNEL transistor for SWITCHING applications. The package is RECTANGULAR with THROUGH-HOLE terminals, operating in ENHANCEMENT MODE up to 175 °C.
61 mJ
DRAIN
60 V
.094 ohm
175 Cel
1.5 W
45 A
TIN
MTP10N10ELG
MTP10N10ELG by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 35A IDM and 40W Pd, it operates in enhancement mode at up to 150 °C, making it ideal for high-power requirements.
50 mJ
100 V
10 A
.22 ohm
40 W
35 A
NTP13N10G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 54 W; JESD-30 Code: R-PSFM-T3; Maximum Drain Current (ID): 13 A;
85 mJ
13 A
.165 ohm
54 W
39 A
MTP2P50EG
MTP2P50EG by Onsemi is a P-CHANNEL Power FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 6A and EAS of 80mJ, operating in ENHANCEMENT MODE. With a package style of FLANGE MOUNT and SILICON element material, it offers reliable performance up to 150°C.
HIGH VOLTAGE
80 mJ
2 A
6 ohm
P-CHANNEL
75 W
6 A
Other Transistors
MTP50P03HDLG
MTP50P03HDLG by Onsemi is a P-CHANNEL Power FET with 30V DS Breakdown Voltage, 150A IDM, and 0.025 ohm RDS(on). Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has a max power dissipation of 125W at 150 °C.
AVALANCHE RATED
1250 mJ
30 V
50 A
.025 ohm
125 W
150 A
MTP52N06VLG
MTP52N06VLG by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 182A and EAS of 406mJ, making it suitable for high-power tasks. With a Drain Current of 52A and 0.025 ohm RDS(on), this transistor operates in ENHANCEMENT MODE efficiently up to 175 °C.
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
406 mJ
52 A
165 W
182 A
FET General Purpose Powers
NTD18N06L-1G
NTD18N06L-1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 54A IDM, and 0.065 ohm RDS. Ideal for SWITCHING applications, it features an ENHANCEMENT MODE operation and 175 °C Max Temp. With a built-in diode, this N-CHANNEL transistor has a rectangular package shape and through-hole terminals.
LOGIC LEVEL COMPATIBLE
72 mJ
18 A
.065 ohm
54 A
NTD20N03L27-1G
NTD20N03L27-1G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 60A IDM, and 0.031 ohm RDS. Ideal for SWITCHING applications due to its N-CHANNEL configuration and ENHANCEMENT MODE operation. Features include built-in diode, 288mJ EAS rating, and SILICON element material.
288 mJ
20 A
.031 ohm
1.75 W
60 A
NTD3055L104-1G
NTD3055L104-1G by Onsemi is a power FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max pulsed drain current of 45A.
.104 ohm
48 W
NTD3055L170-1G
NTD3055L170-1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 27A IDM, and 0.17 ohm RDS(on). Ideal for switching applications, it features an N-CHANNEL configuration in a RECTANGULAR package with 3 terminals. Operating in ENHANCEMENT MODE, it has a max power dissipation of 1.5W at 175 °C.
30 mJ
9 A
.17 ohm
NTP60N06G
NTP60N06G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 180A IDM, and 0.014 ohm RDS(on). Ideal for SWITCHING applications due to its 150W Pdiss, 454mJ EAS rating, and -55 °C to +175°C operating temp range.
454 mJ
.014 ohm
150 W
180 A
Tin (Sn)
40
NTP75N03L09G
NTP75N03L09G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 225A IDM, and 0.008 ohm RDS(on). Ideal for SWITCHING applications due to its N-CHANNEL configuration and ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with SILICON transistor element material.
1500 mJ
75 A
.008 ohm
225 A
NTP75N06G
NTP75N06G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 225A IDM, and 0.0095 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it has a max temp of 175 °C and EAS of 844 mJ.
844 mJ
.0095 ohm
-55 Cel
2.4 W
STP16NK60Z
STP16NK60Z from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain-source voltage of 620V, supports up to 14A continuous current, and dissipates up to 190W. Ideal for high-efficiency power management in various electronic devices.
360 mJ
620 V
14 A
.42 ohm
56 A
STW16NK60Z
STW16NK60Z by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 620V breakdown voltage, 14A max drain current, and 190W power dissipation. Ideal for high-efficiency power management in various electronic devices.
NTP52N10G
NTP52N10G by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 156A IDM, 800mJ EAS, and 0.03 ohm RDS(on). Package style is FLANGE MOUNT with SILICON element material and 175 °C max operating temp.
.03 ohm
214 W
156 A
NTD32N06-1G
NTD32N06-1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 32A Drain Current, and 0.026 ohm On Resistance. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it offers high performance with 90A Pulsed Drain Current capability.
313 mJ
32 A
.026 ohm
93.75 W
90 A
STP40NF12
STP40NF12 by STMicroelectronics is a robust N-channel FET designed for switching applications. It features a max drain current of 40 A, breakdown voltage of 120 V, and power dissipation up to 150 W. Ideal for high-efficiency power management in various electronic devices.
150 mJ
120 V
40 A
.032 ohm
160 A
STQ3NK50ZR-AP
STQ3NK50ZR-AP by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 2A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
120 mJ
.5 A
3.3 ohm
TO-92
O-PBCY-T3
ROUND
CYLINDRICAL
3 W
BOTTOM
NTD110N02R-001G
NTD110N02R-001G by Onsemi is a Power FET with 24V DS Breakdown Voltage, 110A IDM, and 0.0062 ohm RDS(on). Ideal for SWITCHING applications, it features an ENHANCEMENT MODE operation and 175 °C Max Temp. With a built-in diode, this N-CHANNEL transistor has a 120mJ EAS rating.
24 V
12.5 A
.0062 ohm
110 W
110 A
NTD110N02R-001
NTD110N02R-001 by Onsemi is a Power FET with 24V DS Breakdown Voltage, 110A IDM, and 0.0062 ohm RDS(on). Ideal for SWITCHING applications, it features an ENHANCEMENT MODE operation and 120mJ EAS rating. With a max power dissipation of 110W and operating temperature up to 175 °C, this N-CHANNEL transistor in PLASTIC/EPOXY package is suitable for high-power electronic designs.
e0
235
TIN LEAD
NTD20N06-1G
NTD20N06-1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 20A Drain Current, and 0.046 ohm On Resistance. Ideal for switching applications, it features an Enhancement Mode operation and a built-in diode in a rectangular package with through-hole terminals.
170 mJ
.046 ohm
60 W
IRL3715PBF
International Rectifier
IRL3715PBF by International Rectifier is a N-CHANNEL Power FET with 20V DS Breakdown Voltage and 210A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode and 0.014 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 71W and can handle up to 54A Drain Current.
110 mJ
20 V
30 A
71 W
210 A
MATTE TIN OVER NICKEL
NTP18N06G
NTP18N06G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 45A IDM, and 0.09 ohm RDS(on). It is used for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. The transistor operates in ENHANCEMENT MODE and has a max power dissipation of 48.4W at 175 °C.
15 A
.09 ohm
48.4 W
NTP60N06LG
NTP60N06LG by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 180A IDM, and 0.016 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175 °C, making it suitable for high-power tasks.
.016 ohm
NTP85N03G
NTP85N03G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 85A ID, and 0.0068 ohm RDS(ON). It is used for switching applications in enhancement mode with 45A IDM. The transistor operates at a max temperature of 150 °C and has a package style of Flange Mount.
85 A
.0068 ohm
80 W
IXTP110N055P
IXYS Corporation
IXTP110N055P by IXYS Corp is a N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features 250A IDM, 1000mJ EAS, and 0.0135 ohm RDS(ON). The transistor operates in ENHANCEMENT MODE at up to 175°C, with a SILICON element and MATTE TIN finish.
1000 mJ
55 V
.0135 ohm
250 A
NTP2955
NTP2955 by Onsemi is a P-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. Features include 42A pulsed drain current, 216mJ avalanche energy rating, and 0.196 ohm max on resistance. Package style is flange mount with through-hole terminals.
216 mJ
2.4 A
.196 ohm
62.5 W
42 A
STF2NK60Z
STF2NK60Z by STMicroelectronics is an N-channel FET designed for switching applications, featuring a 600V breakdown voltage and a max drain current of 1.4A. It operates in enhancement mode with a power dissipation of up to 20W. Ideal for high-voltage circuits, it ensures reliable performance in compact designs.
90 mJ
1.4 A
8 ohm
20 W
5.6 A
STP40N20
STP40N20 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 40 A, breakdown voltage of 200 V, and power dissipation up to 160 W. Ideal for high-efficiency circuits in various electronic devices.
230 mJ
.045 ohm
STW40N20
STW40N20 by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a max drain current of 40 A and a breakdown voltage of 200 V. It offers low on-resistance at 0.045 Ω and operates up to 150 °C. This versatile transistor is suitable for high-power circuits.
STW5NK100Z
STW5NK100Z by STMicroelectronics is a N-CHANNEL Power FET with 1000V DS Breakdown Voltage. It has 14A IDM, 3.7 ohm RDS(on), and 125W Pdiss. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in diode in a RECTANGULAR package with THROUGH-HOLE terminals.
250 mJ
1000 V
3.5 A
3.7 ohm
IRFB4310ZGPBF
IRFB4310ZGPBF by International Rectifier is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 560A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.006 ohm RDS(on), and 175°C max operating temp.
130 mJ
127 A
120 A
.006 ohm
250 W
560 A
STF20NK50Z
STF20NK50Z by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 500V breakdown voltage and 68A max pulsed drain current. It operates in enhancement mode with a low on-resistance of 0.27Ω. This versatile transistor suits various power management needs.
850 mJ
17 A
.27 ohm
68 A
STF20N20
STF20N20 by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 200V breakdown voltage and max drain current of 18A. It has a low on-resistance of 0.125Ω and operates at up to 150 °C. This versatile transistor is suitable for various power management tasks.
.125 ohm
25 W
72 A
STF6NK70Z
STF6NK70Z by STMicroelectronics is a robust N-channel FET designed for switching applications. It features a 700V breakdown voltage, 20A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
700 V
5 A
1.8 ohm
30 W
STF8NK85Z
STF8NK85Z by STMicroelectronics is an N-channel FET designed for switching applications, featuring a max drain current of 6.7 A and a breakdown voltage of 850 V. It operates in enhancement mode with a power dissipation of 35 W. Ideal for high-voltage circuits, it ensures reliable performance in compact designs.
350 mJ
850 V
6.7 A
1.4 ohm
35 W
26.7 A
STP16NK65Z
STP16NK65Z by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 650V breakdown voltage, 52A pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
.5 ohm
STP20N20
STP20N20 by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a max drain current of 18 A and a breakdown voltage of 200 V. It operates in enhancement mode with a power dissipation of up to 90 W. Its compact design suits various electronic circuits.
STP6NK70Z
STP6NK70Z by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 700V breakdown voltage, 20A pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
STP8NK85Z
STP8NK85Z by STMicroelectronics is an N-channel FET designed for switching applications, featuring a max drain current of 6.7 A and a breakdown voltage of 850 V. It operates in enhancement mode with a power dissipation of up to 150 W. Ideal for high-voltage circuits, it ensures efficient performance in compact designs.
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