Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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STF40NF03L
STMicroelectronics
STF40NF03L by STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a max drain current of 23 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Its compact design ensures efficient performance in various electronic circuits.
LOW THRESHOLD
250 mJ
ISOLATED
SINGLE WITH BUILT-IN DIODE
30 V
23 A
.035 ohm
METAL-OXIDE SEMICONDUCTOR
TO-220AB
R-PSFM-T3
e3
1
3
ENHANCEMENT MODE
175 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
25 W
92 A
Not Qualified
FET General Purpose Power
NO
MATTE TIN
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
STP60N3LH5
STP60N3LH5 by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a max drain current of 48 A and a breakdown voltage of 30 V. It operates in enhancement mode with a power dissipation of up to 60 W. This robust transistor ensures efficient performance in demanding environments.
ULTRA-LOW RESISTANCE
160 mJ
DRAIN
48 A
.0114 ohm
60 W
192 A
STF20NF06L
STF20NF06L by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 20 A, a breakdown voltage of 60 V, and operates at up to 175 °C. Ideal for power management in various electronic devices.
120 mJ
60 V
20 A
.085 ohm
28 W
80 A
STP20NF06L
STP20NF06L by STMicroelectronics is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 80A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode and 0.085 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 60W at 175°C.
HUF75344P3_NL
Fairchild Semiconductor
Fairchild Semiconductor's HUF75344P3_NL is a N-CHANNEL Power FET with 55V DS Breakdown Voltage and 75A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in PLASTIC/EPOXY package.
55 V
75 A
.008 ohm
285 W
STB25NM60N-1
STB25NM60N-1 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 21A max drain current, and built-in diode for enhanced performance. Ideal for high-efficiency power management in various electronic devices.
850 mJ
600 V
21 A
.16 ohm
TO-262AA
R-PSIP-T3
IN-LINE
84 A
Matte Tin (Sn)
STF20NF06
STF20NF06 by STMicroelectronics is an N-channel FET ideal for switching applications. It features a max drain current of 20 A, a breakdown voltage of 60 V, and operates at up to 175 °C. Its compact design ensures efficient performance in various electronic circuits.
.07 ohm
TIN
STF25NM60N
STF25NM60N by STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 21A max drain current, and built-in diode for enhanced performance. Ideal for high-voltage power management systems.
STP20NF06
STP20NF06 from STMicroelectronics is an N-channel FET ideal for switching applications. It features a max drain current of 20 A, a breakdown voltage of 60 V, and operates at up to 175 °C. Its compact design ensures efficient performance in various electronic circuits.
STP25NM60N
STP25NM60N from STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 600V breakdown voltage, 21A max drain current, and built-in diode. This versatile FET is suitable for high-efficiency power management in various electronic devices.
STW25NM60N
STW25NM60N from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 20A max drain current, and 160W power dissipation. Ideal for high-efficiency power management in various electronic devices.
TO-247
150 Cel
160 W
STW29NK50Z
STW29NK50Z by STMicroelectronics is a power FET with N-channel configuration and 500V DS breakdown voltage. It is used for switching applications, offering a max pulsed drain current of 124A and an avalanche energy rating of 550mJ.
550 mJ
500 V
31 A
.13 ohm
TO-247AC
350 W
124 A
SUP65P04-15-E3
Vishay Intertechnology
Vishay Intertechnology's SUP65P04-15-E3 is a P-channel FET with 40V DS breakdown voltage and 65A max drain current. Ideal for power applications, it features a single configuration with built-in diode, 0.015 ohm max on-resistance, and operates in enhancement mode up to 175°C.
40 V
65 A
.015 ohm
P-CHANNEL
120 W
240 A
Other Transistors
MATTE TIN OVER NICKEL
SUP75P03-07-E3
Vishay Intertechnology's SUP75P03-07-E3 is a P-channel Power FET with 30V DS breakdown voltage and 0.007 ohm RDS(on). Ideal for high-power applications, it features 240A IDM, 75A ID, and 187W Pd max. Suitable for enhancement mode operation in various electronic systems.
.007 ohm
187 W
IPP11N03LA
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 52 W; Maximum Drain-Source On Resistance: .0115 ohm; JESD-609 Code: e3;
LOGIC LEVEL COMPATIBLE
80 mJ
25 V
30 A
.0115 ohm
52 W
210 A
SPI80N06S-08
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Drain-Source On Resistance: .008 ohm; Transistor Element Material: SILICON;
700 mJ
260
300 W
320 A
SPP10N10L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Qualification: Not Qualified; Maximum Drain-Source On Resistance: .21 ohm;
AVALANCHE RATED
60 mJ
100 V
10.3 A
.21 ohm
50 W
42.2 A
IPS06N03LAG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83 W; Avalanche Energy Rating (EAS): 225 mJ; Operating Mode: ENHANCEMENT MODE;
225 mJ
50 A
.0096 ohm
TO-251AA
83 W
350 A
IPS13N03LAG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 46 W; Package Style (Meter): IN-LINE; Terminal Position: SINGLE;
.0128 ohm
TO-251
46 W
IPU13N03LAG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 46 W; JESD-609 Code: e3; Package Body Material: PLASTIC/EPOXY;
NTD14N03R-001
Onsemi
NTD14N03R-001 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 25V DS Breakdown Voltage, 11.4A Drain Current, and 0.13 ohm On Resistance. With a max power dissipation of 20.8W and operating temperature up to 150 °C, it is ideal for various electronic devices requiring high-performance transistors.
11.4 A
e0
235
20.8 W
28 A
TIN LEAD
NTD14N03R-1G
NTD14N03R-1G by Onsemi is a single N-channel FET with built-in diode for switching applications. It features a min DS breakdown voltage of 25V, max drain current of 11.4A, and max power dissipation of 20.8W. This MOSFET operates in enhancement mode with a max operating temperature of 150 °C, making it suitable for various power control applications.
IPS04N03LAG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 115 W; Transistor Application: SWITCHING; Package Shape: RECTANGULAR;
600 mJ
.0059 ohm
115 W
IPS09N03LAG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 63 W; Package Shape: RECTANGULAR; Maximum Operating Temperature: 175 Cel;
75 mJ
63 W
IPU09N03LAG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 63 W; JESD-609 Code: e3; Qualification: Not Qualified;
STB25NM50N-1
STB25NM50N-1 by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 500V breakdown voltage and 22A max drain current. It offers a low on-resistance of 0.14Ω and operates at up to 150 °C. This versatile FET is packaged in a through-hole format for easy integration.
350 mJ
22 A
.14 ohm
88 A
STF12PF06
STF12PF06 by STMicroelectronics is a P-channel MOSFET designed for switching applications, featuring a max drain current of 8 A and a breakdown voltage of 60 V. It offers high power dissipation up to 225 W and operates at temperatures up to 175 °C. Ideal for efficient power management in various electronic circuits.
200 mJ
8 A
.2 ohm
225 W
32 A
STF25NM50N
STF25NM50N by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 500V breakdown voltage and 22A max drain current. It operates in enhancement mode with a low on-resistance of 0.14Ω. This robust transistor supports high power dissipation up to 40W.
40 W
STP120NF04
STP120NF04 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 120 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-efficiency power management in various electronic devices.
1200 mJ
120 A
.005 ohm
480 A
STP25NM50N
STP25NM50N by STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 500V breakdown voltage, 22A max drain current, and 160W power dissipation. This robust transistor operates efficiently in high-temperature environments up to 150 °C.
STW25NM50N
STW25NM50N from STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 500V breakdown voltage and 22A max drain current. It offers a low on-resistance of 0.14Ω and operates at up to 150 °C. This robust transistor is perfect for high-power circuits.
STW28NK60Z
STW28NK60Z by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 27A max drain current, and 350W power dissipation. Ideal for high-efficiency power management in various electronic devices.
500 mJ
27 A
.185 ohm
108 A
STW54NK30Z
STW54NK30Z by STMicroelectronics is a N-CHANNEL FET with 300V DS breakdown voltage, 54A max drain current, and 0.06 ohm on-resistance. Ideal for switching applications, it operates in enhancement mode with 200A pulsed drain current capability.
400 mJ
300 V
54 A
.06 ohm
200 A
VMM1500-0075P
IXYS Corporation
IXYS Corporation's VMM1500-0075P is a N-CHANNEL FET with 75V DS Breakdown Voltage, 1500A ID, and 0.0008 ohm RDS. It features SERIES CONNECTED, CENTER TAP configuration for SWITCHING applications. This RECTANGULAR package has 2 elements in ENHANCEMENT MODE suitable for high-power operations.
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
75 V
1500 A
.0008 ohm
R-XUFM-X7
2
7
UNSPECIFIED
NOT SPECIFIED
UPPER
NTD78N03-35G
NTD78N03-35G by Onsemi is a Power FET with N-CHANNEL configuration and built-in diode, ideal for SWITCHING applications. It features a 25V DS Breakdown Voltage, 210A IDM, and 0.006 ohm Drain-Source Resistance. This METAL-OXIDE SEMICONDUCTOR transistor has a SILICON element and operates in ENHANCEMENT MODE.
722.5 mJ
.006 ohm
NTP27N06G
NTP27N06G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 80A IDM, and 0.046 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it has a max power dissipation of 88.2W at 175 °C.
109 mJ
.046 ohm
88.2 W
MTP12P10G
MTP12P10G by Onsemi is a P-CHANNEL FET with 100V DS Breakdown Voltage, 12A Max ID, and 0.3 ohm RDS. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 28A IDM. Package: PLASTIC/EPOXY, RECTANGULAR shape, THROUGH-HOLE terminals.
LEADFORM OPTIONS ARE AVAILABLE
12 A
.3 ohm
75 W
Tin (Sn)
40
MTP23P06VG
MTP23P06VG by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, 81A IDM, and 0.12 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 175°C max temp. It has a built-in DIODE, 794mJ EAS rating, and comes in RECTANGULAR package style.
794 mJ
.12 ohm
90 W
81 A
30
NTD25P03L1G
NTD25P03L1G by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, 75A IDM, and 0.08 ohm RDS(on). Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE at up to 150 °C, it offers high power dissipation of 75W.
25 A
.08 ohm
NTP18N06LG
NTP18N06LG by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 45A IDM, and 0.1 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175 °C, making it suitable for high-power tasks.
61 mJ
15 A
.1 ohm
48.4 W
45 A
NTP2955G
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 62.5 W; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;
216 mJ
2.4 A
.196 ohm
62.5 W
42 A
NTP45N06G
NTP45N06G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 45A Drain Current, and 0.026 ohm On Resistance. Ideal for SWITCHING applications due to its 150A Pulsed Drain Current and 125W Power Dissipation capabilities in ENHANCEMENT MODE operation.
240 mJ
.026 ohm
125 W
150 A
IPP03N03LBG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Avalanche Energy Rating (EAS): 580 mJ; Terminal Position: SINGLE;
580 mJ
.0042 ohm
150 W
IPP04N03LBG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 107 W; Terminal Position: SINGLE; Additional Features: LOGIC LEVEL COMPATIBLE;
270 mJ
.0054 ohm
107 W
IPP05N03LBG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 94 W; Avalanche Energy Rating (EAS): 136 mJ; Minimum DS Breakdown Voltage: 30 V;
136 mJ
.0053 ohm
94 W
IPP07N03LBG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 94 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: PLASTIC/EPOXY;
164 mJ
.0066 ohm
IPP10N03LBG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 58 W; Maximum Pulsed Drain Current (IDM): 200 A; Terminal Form: THROUGH-HOLE;
57 mJ
.0099 ohm
58 W
IPP13N03LBG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 52 W; Additional Features: LOGIC LEVEL COMPATIBLE; Maximum Drain Current (Abs) (ID): 30 A;
64 mJ
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