Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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STP27N3LH5
STMicroelectronics
STP27N3LH5 by STMicroelectronics is an N-channel FET designed for switching applications. It features a max drain current of 27 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for high-efficiency power management in various electronic devices.
50 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
30 V
27 A
.028 ohm
METAL-OXIDE SEMICONDUCTOR
TO-220AB
R-PSFM-T3
e3
1
3
ENHANCEMENT MODE
175 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
45 W
108 A
Not Qualified
FET General Purpose Power
NO
MATTE TIN
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
STP5N52K3
STP5N52K3 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain-source voltage of 525V, a pulsed drain current of 17.6A, and operates at up to 150 °C. Ideal for power management in various electronic devices.
525 V
4.4 A
1.5 ohm
150 Cel
70 W
17.6 A
STP6N120K3
STP6N120K3 by STMicroelectronics is a N-CHANNEL Power FET with 1200V DS Breakdown Voltage, ideal for SWITCHING applications. It features 20A Max Pulsed Drain Current and 2.4Ω Max RDS(on), operating in ENHANCEMENT MODE at up to 150°C.
180 mJ
1200 V
5 A
6 A
2.4 ohm
150 W
20 A
STU27N3LH5
STU27N3LH5 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 27 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for power management in various electronic devices.
TO-251
R-PSIP-T3
IN-LINE
260
30 W
30
STU5N52K3
STU5N52K3 from STMicroelectronics is an N-channel FET ideal for switching applications. It features a 525V breakdown voltage, 4.4A max drain current, and operates at up to 150 °C. This versatile transistor is suitable for various power management tasks.
NOT SPECIFIED
STW13NM60N
STW13NM60N by STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 600V breakdown voltage, 44A max pulsed drain current, and operates at up to 150 °C. This versatile FET is suitable for high-power circuits with efficient performance.
200 mJ
600 V
11 A
.36 ohm
TO-247
90 W
44 A
Matte Tin (Sn)
STW19NM50N
STW19NM50N by STMicroelectronics is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for switching applications. It features 56A max pulsed drain current and 110W power dissipation. The transistor operates in enhancement mode with 0.25 ohm max on-resistance, making it suitable for high-power tasks.
208 mJ
500 V
14 A
.25 ohm
110 W
56 A
STW25N95K3
STW25N95K3 from STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 950V breakdown voltage and 22A max drain current. It offers a built-in diode and operates in enhancement mode. With a robust design, it supports high power dissipation up to 400W.
450 mJ
950 V
22 A
400 W
88 A
STW27NM60ND
STW27NM60ND from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 21A max drain current, and 160W power dissipation. Ideal for high-efficiency power management in various electronic devices.
21 A
.16 ohm
160 W
84 A
STW6N120K3
STW6N120K3 by STMicroelectronics is a N-CHANNEL FET with 1200V DS Breakdown Voltage, ideal for SWITCHING applications. It features 20A IDM, 180mJ EAS, and 150W Max Power Dissipation. The transistor operates in ENHANCEMENT MODE with a max temperature of 150°C, making it suitable for high-power electronic systems.
STF10N62K3
STF10N62K3 from STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 620V breakdown voltage, 33.6A pulsed drain current, and operates at up to 150 °C. This versatile FET is suitable for high-power circuits in various electronic devices.
220 mJ
ISOLATED
620 V
8.4 A
.75 ohm
33.6 A
STF5N52U
STF5N52U by STMicroelectronics is an N-channel FET designed for switching applications, featuring a 525V breakdown voltage and a max drain current of 4.4A. It operates in enhancement mode with a power dissipation of 25W. Ideal for high-voltage circuits, it ensures reliable performance in compact designs.
170 mJ
25 W
STI10N62K3
STI10N62K3 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 620V breakdown voltage, 33.6A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
TO-262AA
125 W
STP10N62K3
STP10N62K3 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 620V breakdown voltage, 33.6A pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
STP78N75F4
STP78N75F4 from STMicroelectronics is an N-channel FET ideal for switching applications. It features a max drain current of 78 A, a breakdown voltage of 75 V, and operates at up to 175 °C. Its compact design suits various power management needs.
185 mJ
75 V
78 A
.011 ohm
312 A
STP7NM60N
STP7NM60N from STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 600V breakdown voltage, 20A max pulsed drain current, and operates at up to 150 °C. Its compact design ensures efficient power management in various electronic circuits.
119 mJ
.9 ohm
STP80N20M5
STP80N20M5 from STMicroelectronics is an N-channel FET ideal for switching applications. It features a max drain current of 65 A, a breakdown voltage of 200 V, and a low on-resistance of 0.02 Ω. This robust transistor operates efficiently in high-temperature environments up to 150 °C.
200 V
61 A
65 A
.02 ohm
190 W
260 A
TIN
STP90N55F4
STP90N55F4 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 90 A, a breakdown voltage of 55 V, and operates at up to 175 °C. Ideal for high-efficiency power management in various electronic devices.
ULTRA LOW-ON RESISTANCE
290 mJ
55 V
90 A
.008 ohm
360 A
STP95N3LLH6
STP95N3LLH6 from STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for high-power circuits with low on-resistance (0.0075 Ω).
150 mJ
80 A
.0075 ohm
320 A
STU75N3LLH6-S
STU75N3LLH6-S by STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It features a max drain current of 75 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for high-performance power management in various electronic devices.
75 A
.0084 ohm
60 W
300 A
BUZ32H
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 75 W; Package Style (Meter): FLANGE MOUNT; JEDEC-95 Code: TO-220AB;
AVALANCHE RATED
120 mJ
9.5 A
.4 ohm
75 W
38 A
STF12NM50ND
STF12NM50ND by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a 500V breakdown voltage, 44A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
350 mJ
.38 ohm
STP95N2LH5
STP95N2LH5 from STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 95 A, a breakdown voltage of 25 V, and operates at up to 175 °C. Ideal for high-power circuits, it ensures reliable performance with low on-resistance.
165 mJ
25 V
95 A
.007 ohm
380 A
NDF04N62ZG
Onsemi
NDF04N62ZG by Onsemi is a Power FET with 620V DS Breakdown Voltage, 18A IDM, and 2Ω RDS(ON). It is an N-CHANNEL transistor for SWITCHING applications. The device operates in ENHANCEMENT MODE and has a max temperature of 150 °C.
2 ohm
18 A
NDF10N62ZG
NDF10N62ZG by Onsemi is a Power FET with 620V DS Breakdown Voltage, 36A IDM, and 0.75 ohm RDS(on). It is an N-CHANNEL transistor for SWITCHING applications. Operating in ENHANCEMENT MODE, it has a max temp of 150 °C and EAS of 300mJ.
300 mJ
10 A
36 A
STF10NM50N
STF10NM50N by STMicroelectronics is an N-channel FET designed for switching applications, featuring a 500V breakdown voltage and a max drain current of 7A. It operates in enhancement mode with a power dissipation of 25W. Ideal for high-temperature environments, it supports efficient energy management.
143 mJ
7 A
.63 ohm
28 A
STP10NM50N
STP10NM50N from STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 500V breakdown voltage, 28A max pulsed drain current, and operates at up to 150 °C. This versatile FET is suitable for high-power circuits with efficient performance.
IPU103N08N3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Terminal Form: THROUGH-HOLE; Operating Mode: ENHANCEMENT MODE;
90 mJ
80 V
50 A
.0103 ohm
100 W
200 A
IPU135N08N3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 79 W; JESD-30 Code: R-PSIP-T3; Maximum Drain Current (ID): 50 A;
40 mJ
.0135 ohm
79 W
NDD04N60Z-1G
NDD04N60Z-1G by Onsemi is a N-channel FET with 600V DS breakdown voltage, 20A IDM, and 120mJ EAS. Ideal for power applications requiring high drain current handling in enhancement mode operation.
4.1 A
2.6 A
83 W
FET General Purpose Powers
NDD05N50Z-1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83 W; Operating Mode: ENHANCEMENT MODE; JESD-30 Code: R-PSIP-T3;
130 mJ
3 A
4.7 A
19 A
VMM1000-01P
IXYS Corporation
IXYS Corporation's VMM1000-01P is a N-CHANNEL FET with 2 SERIES CONNECTED elements. It has a 100V DS Breakdown Voltage, 0.0012 ohm RDS(on), and 1000A ID. Ideal for SWITCHING applications, this RECTANGULAR package FET operates in ENHANCEMENT MODE with SILICON material technology.
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
100 V
1000 A
.0012 ohm
R-XUFM-X7
2
7
UNSPECIFIED
UPPER
IPP070N06LG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 214 W; No. of Terminals: 3; Maximum Pulsed Drain Current (IDM): 320 A;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
60 V
214 W
IPU64CN10NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 44 W; Package Style (Meter): IN-LINE; Minimum DS Breakdown Voltage: 100 V;
34 mJ
17 A
.064 ohm
TO-251AA
44 W
68 A
IPI05CN10NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Transistor Application: SWITCHING; Terminal Finish: MATTE TIN;
826 mJ
100 A
.0054 ohm
300 W
400 A
IPI12CN10NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Minimum DS Breakdown Voltage: 100 V; Package Style (Meter): IN-LINE;
FAST SWITCHING
154 mJ
67 A
.0129 ohm
268 A
IPI26CN10NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 71 W; JESD-30 Code: R-PSIP-T3; Package Shape: RECTANGULAR;
65 mJ
35 A
.026 ohm
71 W
140 A
IPI35CN10NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 58 W; Transistor Application: SWITCHING; Minimum DS Breakdown Voltage: 100 V;
47 mJ
.035 ohm
58 W
IPI80CN10NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 31 W; Operating Mode: ENHANCEMENT MODE; Terminal Form: THROUGH-HOLE;
17 mJ
13 A
.08 ohm
31 W
52 A
IPP048N06LG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Package Style (Meter): FLANGE MOUNT; Maximum Drain-Source On Resistance: .0047 ohm;
810 mJ
.0047 ohm
IPP06CNE8NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 214 W; No. of Terminals: 3; JESD-30 Code: R-PSFM-T3;
480 mJ
85 V
.0065 ohm
IPP08CN10NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 167 W; Minimum DS Breakdown Voltage: 100 V; JEDEC-95 Code: TO-220AB;
262 mJ
.0085 ohm
167 W
IPP08CNE8NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 167 W; JESD-609 Code: e3; No. of Terminals: 3;
IPP12CN10NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; JEDEC-95 Code: TO-220AB; JESD-30 Code: R-PSFM-T3;
IPP12CNE8NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Transistor Element Material: SILICON; Transistor Application: SWITCHING;
IPP16CNE8NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Package Body Material: PLASTIC/EPOXY; Maximum Drain Current (ID): 53 A;
107 mJ
53 A
.0165 ohm
212 A
IPP26CNE8NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 71 W; Terminal Finish: MATTE TIN; Package Body Material: PLASTIC/EPOXY;
IPP35CN10NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 58 W; No. of Elements: 1; Package Style (Meter): FLANGE MOUNT;
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