Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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IPP26CN10NGHKSA1
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Package Body Material: PLASTIC/EPOXY; JEDEC-95 Code: TO-220AB;
65 mJ
SINGLE WITH BUILT-IN DIODE
100 V
35 A
.026 ohm
METAL-OXIDE SEMICONDUCTOR
TO-220AB
R-PSFM-T3
1
3
ENHANCEMENT MODE
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
140 A
NO
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
IPP50R250CPHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Avalanche Energy Rating (EAS): 345 mJ; Case Connection: ISOLATED; Operating Mode: ENHANCEMENT MODE;
345 mJ
ISOLATED
500 V
13 A
.25 ohm
31 A
IPP80CN10NGHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Package Body Material: PLASTIC/EPOXY; Package Style (Meter): FLANGE MOUNT;
17 mJ
.08 ohm
52 A
SPP15P10PGHKSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain-Source On Resistance: .24 ohm; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
AVALANCHE RATED
230 mJ
15 A
.24 ohm
P-CHANNEL
60 A
SPP15P10PLGHKSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Additional Features: LOGIC LEVEL COMPATIBLE, AVALANCHE RATED; Minimum DS Breakdown Voltage: 100 V; Transistor Element Material: SILICON;
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
.2 ohm
SPP18P06PHKSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Maximum Drain-Source On Resistance: .13 ohm; JESD-30 Code: R-PSFM-T3;
150 mJ
DRAIN
60 V
18.6 A
.13 ohm
NOT SPECIFIED
74.4 A
SPP20N60S5HKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Peak Reflow Temperature (C): NOT SPECIFIED; JESD-30 Code: R-PSFM-T3; Minimum DS Breakdown Voltage: 600 V;
690 mJ
600 V
20 A
.19 ohm
40 A
SPP80N03S2L05AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: R-PSFM-T3; Minimum DS Breakdown Voltage: 30 V; No. of Elements: 1;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
325 mJ
30 V
80 A
.0075 ohm
320 A
FCH072N60F_F085
Fairchild Semiconductor
FCH072N60F_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. Ideal for SWITCHING applications, it has a max Drain Current of 52A and an Operating Temperature range of -55 to 150 °C.
1128 mJ
.072 ohm
TO-247
150 Cel
-55 Cel
481 W
AEC-Q101
200 ns
100 ns
NDDL01N60Z-1G
Onsemi
NDDL01N60Z-1G by Onsemi is a Power FET with 600V DS Breakdown Voltage, 3.4A IDM, and 15 ohm RDS(on). Ideal for power applications requiring high voltage tolerance and low on-resistance. Suitable for use in power supplies, motor control, and lighting systems due to its N-channel configuration and 26W Pdiss.
12 mJ
.8 A
15 ohm
3 pF
R-PSIP-T3
e3
IN-LINE
260
26 W
3.4 A
TIN
30
NDPL100N10BG
The Onsemi NDPL100N10BG is a Power FET with 100V DS Breakdown Voltage, 400A IDM, and 0.0087 ohm RDS(ON). Ideal for SWITCHING applications, it features N-CHANNEL polarity in a RECTANGULAR package with THROUGH-HOLE terminals. Operating in ENHANCEMENT MODE, this FET has an EAS of 147mJ and can handle up to 100A ID.
147 mJ
100 A
.0087 ohm
175 Cel
400 A
Tin (Sn)
NTP8G202NG
NTP8G202NG by Onsemi is a single N-channel Power FET with 9A max drain current and 65W max power dissipation. Ideal for applications requiring high power handling, such as motor control systems or power supplies. Operating temperature up to 150°C ensures reliable performance in demanding environments.
9 A
65 W
FET General Purpose Power
STF10N105K5
STMicroelectronics
STF10N105K5 by STMicroelectronics is an N-channel MOSFET ideal for power applications. It supports a max drain current of 6 A and power dissipation up to 30 W, operating efficiently at temperatures up to 150 °C. This FET is perfect for switching and amplification tasks in electronic circuits.
6 A
30 W
STF11N50M2
STF11N50M2 by STMicroelectronics is an N-channel MOSFET ideal for power management applications. It supports a max drain current of 8 A and power dissipation of 25 W, operating up to 150 °C. This transistor is perfect for efficient switching in various electronic devices.
8 A
25 W
STF24N65M2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Maximum Drain-Source On Resistance: .23 ohm; Maximum Pulsed Drain Current (IDM): 64 A;
650 mJ
650 V
16 A
.23 ohm
64 A
STF5N105K5
STF5N105K5 by STMicroelectronics is an N-channel MOSFET ideal for power applications. It supports a max drain current of 3 A, dissipates up to 25 W, and operates at temperatures up to 150 °C. This FET is perfect for efficient switching in various electronic circuits.
3 A
STFI13N80K5
STFI13N80K5 from STMicroelectronics is an N-channel MOSFET ideal for power applications. It supports a max drain current of 12 A and power dissipation of 35 W, operating up to 150 °C. This FET is perfect for efficient switching in various electronic circuits.
12 A
35 W
STFW2N105K5
STFW2N105K5 by STMicroelectronics is a N-CHANNEL FET with 2A max drain current and 30W power dissipation. Ideal for applications requiring high-power switching in environments up to 150°C, such as power supplies and motor control systems.
2 A
STI18N65M2
STI18N65M2 by STMicroelectronics is an N-channel MOSFET ideal for high-efficiency power applications. It supports a max drain current of 12 A and power dissipation up to 110 W, operating at temperatures up to 150 °C. Perfect for switching and amplification in various electronic circuits.
110 W
STP13N65M2
STP13N65M2 from STMicroelectronics is a powerful N-channel MOSFET ideal for high-efficiency applications. It supports a max drain current of 10 A, power dissipation up to 110 W, and operates at temperatures up to 150 °C. Perfect for power management in industrial systems.
10 A
STP24N65M2
STP24N65M2 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 650V breakdown voltage, 16A max drain current, and operates at temperatures up to 150 °C. Ideal for high-efficiency power management solutions.
150 W
STP33N65M2
STP33N65M2 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 96A Pulsed Drain Current, 780mJ Avalanche Energy Rating, and 0.14 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, it has a max power dissipation of 190W and can withstand temperatures from -55 to 150 °C.
780 mJ
24 A
.14 ohm
190 W
96 A
STP40N65M2
STP40N65M2 from STMicroelectronics is a powerful N-channel MOSFET ideal for high-efficiency applications. It supports a max drain current of 32 A and power dissipation up to 250 W, operating at temperatures up to 150 °C. Perfect for power management in industrial systems.
32 A
250 W
STU13N65M2
STU13N65M2 from STMicroelectronics is a powerful N-channel MOSFET ideal for high-efficiency applications. It supports a max drain current of 10 A and power dissipation up to 110 W, operating at temperatures up to 150 °C. Perfect for power management in various electronic devices.
STU7N105K5
STU7N105K5 by STMicroelectronics is an N-channel MOSFET ideal for power management applications. It supports a max drain current of 4 A, dissipates up to 110 W, and operates at temperatures up to 150 °C. Perfect for efficient switching in various electronic devices.
4 A
STW10N105K5
STW10N105K5 by STMicroelectronics is a N-CHANNEL FET with 6A max drain current and 130W power dissipation. Ideal for high-power applications, it operates at up to 150°C. Its METAL-OXIDE SEMICONDUCTOR technology ensures efficient performance in single configuration setups.
130 W
STW48N60M2-4
STW48N60M2-4 by STMicroelectronics is a N-CHANNEL FET with 42A max drain current and 300W power dissipation. Ideal for high-power applications, it operates up to 150°C, making it suitable for industrial and automotive sectors.
42 A
300 W
STW48N60M2
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Drain Current (Abs) (ID): 42 A; Maximum Operating Temperature: 150 Cel;
MATTE TIN
STW7N105K5
STW7N105K5 by STMicroelectronics is a N-CHANNEL FET with 4A max drain current and 110W max power dissipation. It utilizes metal-oxide semiconductor technology, operates up to 150°C, and is commonly used in power applications requiring high efficiency and reliability.
STF12N50M2
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 85 W; Maximum Drain Current (ID): 10 A; Peak Reflow Temperature (C): NOT SPECIFIED;
85 W
STP120N10F4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; JEDEC-95 Code: TO-220AB; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
215 mJ
120 A
.01 ohm
390 A
STP160N4LF6
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 120 A;
STP265N6F6AG
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Operating Temperature: 175 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
180 A
STW28N65M2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 170 W; Transistor Element Material: SILICON; No. of Terminals: 3;
760 mJ
.18 ohm
170 W
STW56N60M2
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 350 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Operating Temperature: 150 Cel;
350 W
STW56N65M2-4
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 358 W; No. of Elements: 1; Peak Reflow Temperature (C): NOT SPECIFIED;
49 A
358 W
STW56N65M2
STW56N65M2 by STMicroelectronics is a N-CHANNEL FET with 49A max drain current and 358W max power dissipation. It utilizes METAL-OXIDE SEMICONDUCTOR tech, suitable for high-power applications like motor control and power supplies. Operating temp up to 150°C ensures reliable performance in demanding environments.
CSD18542KCS
Texas Instruments
CSD18542KCS by Texas Instruments is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 400A IDM. Ideal for high-power applications, it features a max power dissipation of 200W, operating temperature range of -55 to 175°C, and avalanche energy rating of 281mJ.
281 mJ
170 A
14 pF
1.8
200 W
STFW42N60M2-EP
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 63 W; Transistor Application: SWITCHING; Maximum Drain Current (ID): 34 A;
800 mJ
34 A
.087 ohm
2.5 pF
63 W
136 A
STP42N60M2-EP
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Operating Mode: ENHANCEMENT MODE; Maximum Pulsed Drain Current (IDM): 136 A;
BULK: 1000
STW42N60M2-EP
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; No. of Elements: 1; Maximum Drain Current (ID): 34 A;
SCT2280KEC
ROHM
ROHM's SCT2280KEC is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and can handle up to 35A pulsed drain current. With a max power dissipation of 108W and operating temperature of 175°C, it offers reliable performance in various industrial settings.
1200 V
14 A
.364 ohm
5 pF
108 W
SILICON CARBIDE
SCT2450KEC
ROHM's SCT2450KEC is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and can handle up to 25A pulsed drain current. With a max power dissipation of 85W and operating temperature of 175°C, it offers reliable performance in various industrial settings.
.585 ohm
4 pF
25 A
R6046ANZC8
ROHM R6046ANZC8 is a N-CHANNEL FET with 600V DS breakdown voltage, 115A IDM, and 0.081 ohm max RDS(on). Ideal for switching applications due to its single configuration with built-in diode. Package style is flange mount with isolated case connection.
142 mJ
46 A
.081 ohm
115 A
10
SCT2160KEC
ROHM's SCT2160KEC is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for SWITCHING applications. It features 55A IDM, 0.208 ohm RDS(on), and 165W power dissipation. The transistor operates in ENHANCEMENT MODE at up to 175°C, making it suitable for high-power circuits.
22 A
.208 ohm
7 pF
165 W
55 A
SCT2080KEC
ROHM's SCT2080KEC is a N-CHANNEL Power FET with 1200V DS Breakdown Voltage. Ideal for SWITCHING applications, it has a max Drain Current of 40A and On Resistance of 0.117 ohm. Operating in ENHANCEMENT MODE, it can handle up to 80A Pulsed Drain Current and dissipate 262W power at max.
.117 ohm
16 pF
262 W
R6004KNX
ROHM R6004KNX is a N-CHANNEL FET with 600V DS breakdown voltage, 4A max drain current, and 0.98 ohm on-resistance. Ideal for switching applications, it features a single configuration with built-in diode and operates in enhancement mode. Package style is flange mount with through-hole terminals.
46 mJ
.98 ohm
e1
TIN SILVER COPPER
R6030KNX
ROHM's R6030KNX is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Featuring single configuration with built-in diode, it offers 30A max drain current and 0.13 ohm on-resistance. The transistor operates in enhancement mode and has an 80A pulsed drain current rating.
636 mJ
30 A
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