Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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STFU15NM65N
STMicroelectronics
STFU15NM65N by STMicroelectronics is a N-CHANNEL FET with 650V DS breakdown voltage, 48A IDM, and 0.38 ohm max RDS(on). Ideal for switching applications in enhancement mode operation. Package body material PLASTIC/EPOXY, RECTANGULAR shape with THROUGH-HOLE terminals.
187 mJ
ISOLATED
SINGLE WITH BUILT-IN DIODE
650 V
12 A
.38 ohm
METAL-OXIDE SEMICONDUCTOR
TO-220AB
R-PSFM-T3
e3
1
3
ENHANCEMENT MODE
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
48 A
NO
MATTE TIN
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
STF9N80K5
STF9N80K5 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain-source voltage of 800V, a pulsed drain current of 28A, and operates from -55 °C to 150 °C. Ideal for power management in various electronic circuits.
800 V
7 A
.9 ohm
.65 pF
150 Cel
-55 Cel
NOT SPECIFIED
25 W
28 A
STF26N60M2
STF26N60M2 by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 80A IDM, 0.165 ohm RDS(on), and 250mJ EAS. Package: PLASTIC/EPOXY, RECTANGULAR shape, THROUGH-HOLE terminals.
250 mJ
600 V
20 A
.165 ohm
80 A
STP27N60M2-EP
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 170 W; Avalanche Energy Rating (EAS): 260 mJ; No. of Terminals: 3;
260 mJ
DRAIN
.163 ohm
1 pF
170 W
STW27N60M2-EP
STW27N60M2-EP by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A IDM, 260mJ EAS, and 0.163 ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max power dissipation of 170W and can withstand up to 150°C.
TO-247
STW33N60DM2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 190 W; Maximum Drain Current (ID): 24 A; Maximum Drain-Source On Resistance: .13 ohm;
570 mJ
24 A
.13 ohm
190 W
96 A
SCT2120AFC
ROHM
ROHM's SCT2120AFC is a N-CHANNEL FET with 650V DS breakdown voltage and 72A IDM. Ideal for switching applications, it features 0.156 ohm max RDS(on) and SILICON CARBIDE element material. The transistor operates in enhancement mode with single configuration and built-in diode.
29 A
.156 ohm
72 A
SILICON CARBIDE
BSM300D12P2E001
ROHM BSM300D12P2E001 is a N-CHANNEL FET with 1200V DS Breakdown Voltage, 600A IDM, and 300A ID. It features SERIES CONNECTED configuration for SWITCHING applications. The transistor has 2 elements with built-in diode and thermistor in a RECTANGULAR package style.
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
1200 V
300 A
R-XUFM-X11
2
11
UNSPECIFIED
600 A
UPPER
BSM080D12P2C008
ROHM BSM080D12P2C008 is a N-CHANNEL FET with 1200V DS Breakdown Voltage, 160A IDM, and 80A ID. It's used for SWITCHING applications due to its SERIES CONNECTED, CENTER TAP design with SILICON CARBIDE technology.
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X8
8
160 A
SUP70090E-GE3
Vishay Intertechnology
Vishay Intertechnology's SUP70090E-GE3 is a N-channel FET with 100V DS breakdown voltage, ideal for switching applications. Featuring a single configuration with built-in diode, it offers 120A max pulsed drain current and 0.0089 ohm max RDS(on). The transistor operates in enhancement mode and has an avalanche energy rating of 80mJ, making it suitable for high-power requirements.
80 mJ
100 V
50 A
.0089 ohm
120 A
STFI14N80K5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Transistor Application: SWITCHING; Maximum Operating Temperature: 150 Cel;
270 mJ
.445 ohm
.8 pF
TO-281
R-PSIP-T3
IN-LINE
30 W
TK31N60W5,S1VF
Toshiba
Toshiba's TK31N60W5,S1VF is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 123A IDM, 437mJ EAS, and 0.099ohm RDS(ON). Operating in ENHANCEMENT MODE at up to 150°C, it has a max power dissipation of 230W.
437 mJ
30.8 A
.099 ohm
9.5 pF
230 W
123 A
AUIRFP4310Z
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Package Body Material: PLASTIC/EPOXY; Additional Features: ULTRA LOW RESISTANCE;
ULTRA LOW RESISTANCE
355 mJ
.006 ohm
TO-247AC
480 A
AEC-Q101
DMG4N60SCT
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-220AB; JESD-30 Code: R-PSFM-T3; Maximum Drain-Source On Resistance: 2.5 ohm;
90 mJ
4.5 A
2.5 ohm
260
6 A
DMNH6008SCTQ
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-609 Code: e3; Operating Mode: ENHANCEMENT MODE; Maximum Pulsed Drain Current (IDM): 200 A;
HIGH RELIABILITY
190 mJ
60 V
130 A
.008 ohm
200 A
DMNH6008SCT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Terminal Finish: MATTE TIN; Transistor Application: SWITCHING;
DMTH4005SCT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Transistor Application: SWITCHING; JEDEC-95 Code: TO-220AB;
52.8 mJ
40 V
100 A
.0047 ohm
DMT4005SCT
DMT4005SCT by Diodes Inc. is a N-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 160A and EAS of 52.8mJ, making it suitable for high-power tasks in automotive (AEC-Q101) and industrial settings.
DMT6005LCT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Pulsed Drain Current (IDM): 130 A; Reference Standard: AEC-Q101; Terminal Position: SINGLE;
43.5 mJ
DMT10H010LCT
DMT10H010LCT by Diodes Inc. is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 92A and 0.012 ohm RDS(ON), making it suitable for high-power ENHANCEMENT MODE operations in automotive systems. The package style is FLANGE MOUNT with METAL-OXIDE SEMICONDUCTOR technology and SILICON element material.
15 mJ
62 A
.012 ohm
92 A
DMTH6005LCT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain-Source On Resistance: .006 ohm; Terminal Finish: MATTE TIN; Transistor Element Material: SILICON;
98 mJ
SCT10N120
SCT10N120 by STMicroelectronics is a N-CHANNEL Power FET with 1200V DS Breakdown Voltage and 24A IDM. It is used for SWITCHING applications, featuring SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it has a max power dissipation of 150W and can handle up to 12A drain current.
.69 ohm
9 pF
200 Cel
150 W
DMTH6004SCT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 136 W; Minimum Operating Temperature: -55 Cel; No. of Terminals: 3;
200 mJ
.00365 ohm
105 pF
175 Cel
136 W
180 A
MIL-STD-202
DMT6004SCT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 113 W; Terminal Finish: MATTE TIN; Avalanche Energy Rating (EAS): 200 mJ;
113 W
STP9N80K5
STP9N80K5 from STMicroelectronics is an N-channel FET ideal for switching applications, featuring a max drain-source voltage of 800V and a pulsed drain current of 28A. It operates in enhancement mode with a power dissipation of up to 110W. This versatile transistor is suitable for high-temperature environments, ranging from -55 °C to 150 °C.
110 W
STW9N80K5
STW9N80K5 from STMicroelectronics is an N-channel FET designed for switching applications, featuring a max drain-source voltage of 800V and a pulsed drain current of 28A. It operates in enhancement mode with a power dissipation of up to 110W. Ideal for high-voltage circuits, it ensures reliable performance in demanding environments.
DMJ70H900HJ3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 68 W; No. of Elements: 1; Terminal Finish: MATTE TIN;
50 mJ
700 V
TO-251
68 W
10 A
DMN90H2D2HCTI
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 40 W; Case Connection: ISOLATED; Operating Mode: ENHANCEMENT MODE;
360 mJ
900 V
2.2 ohm
40 W
STU5N95K5
STU5N95K5 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 950V breakdown voltage, 14A max pulsed drain current, and operates at temperatures from -55 °C to 150 °C. Ideal for power management in various electronic devices.
AVALANCHE ENERGY RATED
70 mJ
950 V
3.5 A
TO-251AA
70 W
14 A
57 ns
28 ns
SCT3030KLGC11
ROHM's SCT3030KLGC11 is a N-CHANNEL FET with 1200V DS breakdown voltage and 180A IDM. Ideal for switching applications, it features 0.039 ohm max drain-source resistance and silicon carbide element material. The transistor operates in enhancement mode with a max drain current of 72A.
.039 ohm
265
TIN
10
SCT3040KLGC11
ROHM's SCT3040KLGC11 is a N-CHANNEL Power FET with 1200V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a max IDM of 137A and ID of 55A. With 0.052 ohm RDS(on), this SILICON CARBIDE MOSFET operates in ENHANCEMENT MODE for high-power efficiency.
55 A
.052 ohm
137 A
SCT3060ALGC11
ROHM's SCT3060ALGC11 is a N-CHANNEL FET with 650V DS breakdown voltage and 97A IDM. Ideal for switching applications, it features 0.078 ohm max RDS(on) and SILICON CARBIDE technology. Package style: FLANGE MOUNT, terminal finish: TIN, operating mode: ENHANCEMENT MODE.
39 A
.078 ohm
97 A
FCPF165N65S3L1
Onsemi
FCPF165N65S3L1 by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage. It has a max IDM of 47.5A and EAS of 87mJ, suitable for SWITCHING applications. Operating in ENHANCEMENT MODE, it offers 0.165 ohm RDS(on) and can handle up to 35W power dissipation at temperatures ranging from -55 to 150 °C.
87 mJ
19 A
35 W
47.5 A
SUP90142E-GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 375 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1;
180 mJ
200 V
90 A
.0169 ohm
24 pF
375 W
240 A
Tin (Sn)
30
204 ns
278 ns
DMG8N65SCT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Terminal Finish: MATTE TIN; Transistor Element Material: SILICON;
389 mJ
8 A
1.3 ohm
125 W
FCPF190N65S3L1
FCPF190N65S3L1 by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage. It has 35A IDM, 76mJ EAS, and 0.19 ohm RDS(ON). Ideal for SWITCHING applications in ENHANCEMENT MODE, it operates b/w -55 to 150 °C. Suitable for high-power circuits requiring efficient switching capabilities.
76 mJ
.19 ohm
33 W
35 A
FCPF250N65S3L1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 31 W; Package Style (Meter): FLANGE MOUNT; JESD-30 Code: R-PSFM-T3;
57 mJ
.25 ohm
31 W
30 A
TK100A10N1,S4X
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Shape: RECTANGULAR; No. of Terminals: 3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
222 mJ
.0038 ohm
362 A
TK65A10N1,S4X
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-220AB; Terminal Position: SINGLE; No. of Elements: 1;
143 mJ
.0048 ohm
296 A
STWA20N95DK5
STWA20N95DK5 from STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 950V breakdown voltage and 72A max pulsed drain current. It operates in enhancement mode with a power dissipation of up to 250W. This robust transistor ensures reliable performance in demanding environments.
520 mJ
18 A
.33 ohm
5 pF
250 W
DMN90H8D5HCTI
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; Package Shape: RECTANGULAR; Terminal Form: THROUGH-HOLE;
97 mJ
2.5 A
7 ohm
3 A
DMP45H4D9HJ3
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Terminals: 3; Maximum Pulsed Drain Current (IDM): 22.4 A; Maximum Drain Current (ID): 4.6 A;
450 V
4.6 A
4.9 ohm
P-CHANNEL
22.4 A
DMJ70H1D0SV3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain-Source On Resistance: 1 ohm; JEDEC-95 Code: TO-251; Operating Mode: ENHANCEMENT MODE;
7.5 mJ
1 ohm
DMJ70H1D4SV3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Transistor Application: SWITCHING; Package Style (Meter): IN-LINE;
5 A
1.5 ohm
DMJ70H1D5SV3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: R-PSIP-T3; JESD-609 Code: e3; No. of Terminals: 3;
DMN95H2D2HCTI
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; JESD-30 Code: R-PSFM-T3; No. of Terminals: 3;
DMN95H8D5HCTI
DMN95H8D5HCTI by Diodes Inc. is a N-CHANNEL Power FET with 950V DS Breakdown Voltage and 3A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has an RDS(on) of 7 ohm and EAS of 97mJ for efficient performance.
DMTH10H005SCT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; Transistor Application: SWITCHING; Terminal Form: THROUGH-HOLE;
542 mJ
140 A
.005 ohm
400 A
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