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BSM080D12P2C008

ROHM

BSM080D12P2C008 by ROHM

ROHM BSM080D12P2C008 is a N-CHANNEL FET with 1200V DS Breakdown Voltage, 160A IDM, and 80A ID. It's used for SWITCHING applications due to its SERIES CONNECTED, CENTER TAP design with SILICON CARBIDE technology.

Median Price

$315.000

Lifecycle Status

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11

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Verical

USA . 24 parts In-Stock

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$308.207

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Arrow

USA . 24 parts In-Stock

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Chip1Stop

Japan . 12 parts In-Stock

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$315.000

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$243.000

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$216.000

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DigiKey

USA . 61 parts In-Stock

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$332.920

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$318.735

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RS (Exports)

UK . 12 parts In-Stock

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$337.372

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Nova Conductors

Japan . 50 parts In-Stock

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$356.980

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Schukat

Germany . 1 parts In-Stock

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$488.741

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$374.142

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Vyrian

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VNN

France . 829 parts In-Stock

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Semtec, LLC

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ACDS - Activité Composants Distribution Service

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Corohmni

South Africa . 18 parts In-Stock

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$1.020

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Aztec Data Supply Inc.

USA . 2,187 parts In-Stock

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$1.490

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AZTECH Wire

Italy . 529 parts In-Stock

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$8.131

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CoreStaff

Japan . 9 parts In-Stock

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$119.063

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Ampacity Inc.

Singapore . 21 parts In-Stock

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$194.650

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Continental Prestige Electronics

USA . 3,160 parts In-Stock

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$356.980

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$349.840

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$349.840

Argo Parts USA

USA . 812 parts In-Stock

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$356.980

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$353.410

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$349.840

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$346.271

812

$356.980

$353.410

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$346.271

Microchip USA

USA . 8,715 parts In-Stock

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$573.720

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Authorized Procurement Solutions

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Bastille Electronics

Australia . 69 parts In-Stock

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Allen Electronics Distributors

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Overview

Unleash the power of innovation with the BSM080D12P2C008 by ROHM. As a leading manufacturer in the industry, ROHM delivers top-quality Power Field Effect Transistors that are ideal for various switching applications. With a minimum DS Breakdown Voltage of 1200V and a Maximum Pulsed Drain Current of 160A, this N-CHANNEL transistor offers unparalleled performance and reliability. The BSM080D12P2C008 features a unique configuration of SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE, making it a versatile solution for your power management needs. Experience the benefits of enhanced efficiency and durability with this cutting-edge technology from ROHM.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL FETs typically have lower ON-state resistance, allowing for efficient power transfer and reduced power losses.

Minimum DS Breakdown Voltage: 1200 V

High breakdown voltage ensures the FET can handle high voltages without breakdown, making it suitable for high-power applications.

Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

This configuration allows for higher voltage handling capacity and improved reliability in applications where multiple FETs are needed.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring fast switching speeds and efficient power delivery.

Maximum Pulsed Drain Current (IDM): 160 A

High pulsed drain current capability allows for handling of short-term high current spikes, enabling reliable operation in dynamic load conditions.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology offers high switching speeds, low ON-state resistance, and efficient power handling, making it ideal for power applications.

Transistor Element Material: SILICON CARBIDE

Silicon carbide elements provide high temperature tolerance, reduced conduction losses, and improved efficiency compared to traditional silicon FETs.

Technical Specifications

Power Field Effect Transistors (FET) BSM080D12P2C008 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from ROHM

Specs

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

1200 V

Maximum Drain Current (ID):

80 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-XUFM-X8

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

160 A

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON CARBIDE

Trade Compliance

BSM080D12P2C008 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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