Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Add filters
All
Selected
SP8K5FU6TB
ROHM
ROHM SP8K5FU6TB is an N-CHANNEL FET with 3.5A max drain current and 2W max power dissipation. Ideal for applications requiring high power efficiency in a compact design, such as power management systems or motor control circuits. Operating at up to 150°C, it offers reliable performance in demanding environments.
3.5 A
METAL-OXIDE SEMICONDUCTOR
1
ENHANCEMENT MODE
150 Cel
260
N-CHANNEL
2 W
FET General Purpose Power
YES
10
SP8K2FU6TB
ROHM SP8K2FU6TB is an N-CHANNEL FET with 6A max drain current and 2W max power dissipation. Ideal for applications requiring high power efficiency, it operates in enhancement mode at up to 150°C. Suitable for surface mount designs, it features metal-oxide semiconductor technology.
6 A
RDX045N60FU6
ROHM's RDX045N60FU6 is a single N-channel power FET with 4.5A max drain current and 35W max power dissipation. Ideal for enhancement mode operation in applications requiring high efficiency and reliability at up to 150°C operating temperature.
SINGLE
4.5 A
35 W
NO
RSD050N06TL
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 15 W; Transistor Application: SWITCHING; Operating Mode: ENHANCEMENT MODE;
SINGLE WITH BUILT-IN DIODE
60 V
5 A
.14 ohm
R-PSSO-G2
e2
2
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
15 W
15 A
Not Qualified
TIN COPPER
GULL WING
SWITCHING
SILICON
RSD150N06TL
ROHM RSD150N06TL is a N-CHANNEL FET with 60V DS breakdown voltage, 15A max drain current, and 0.051 ohm on-resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 20W.
.051 ohm
20 W
30 A
RSD175N10TL
ROHM RSD175N10TL is a N-CHANNEL FET with 100V DS Breakdown Voltage, 0.119 ohm RDS(ON), and 35A IDM. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a SMALL OUTLINE package.
100 V
17.5 A
.119 ohm
35 A
TT8J11TCR
ROHM's TT8J11TCR is a P-CHANNEL FET with 2 elements, built-in diode for SWITCHING applications. Features include 12V DS Breakdown Voltage, 3.5A Drain Current, 0.043 ohm On Resistance. With small outline package and max temp of 150°C, it suits various electronic designs.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
12 V
.043 ohm
R-PDSO-F8
8
P-CHANNEL
1.25 W
12 A
Other Transistors
FLAT
DUAL
TT8J13TCR
ROHM TT8J13TCR is a P-CHANNEL FET with 2 elements, built-in diode for SWITCHING applications. Features include 12V DS Breakdown Voltage, 5A IDM, and 0.062 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max temp of 150°C and small outline package style.
2.5 A
.062 ohm
RCX450N20
RCX450N20 by ROHM is a N-CHANNEL power FET with a min DS breakdown voltage of 200V. It has a max pulsed drain current of 180A and a max drain-source on resistance of 0.055 ohm. This transistor is commonly used for switching applications.
160 mJ
ISOLATED
200 V
45 A
.055 ohm
TO-220AB
R-PSFM-T3
e1
3
FLANGE MOUNT
180 A
TIN SILVER COPPER
THROUGH-HOLE
RP1H065SPTR
ROHM RP1H065SPTR is a P-CHANNEL FET with 45V DS Breakdown Voltage and 6.5A ID. It's used for SWITCHING applications in ENHANCEMENT MODE, featuring 0.046 ohm RDS(ON) and 26A IDM.
DRAIN
45 V
6.5 A
.046 ohm
R-PDSO-F6
6
NOT SPECIFIED
26 A
RCX300N20
ROHM's RCX300N20 is a N-CHANNEL FET with 200V DS breakdown voltage, ideal for switching applications. It features 140A max pulsed drain current and 0.0427 ohm max drain-source resistance. The transistor operates in enhancement mode with a max power dissipation of 40W, making it suitable for high-power circuits.
396 mJ
70 A
.0427 ohm
40 W
140 A
FET General Purpose Powers
RCX511N25
ROHM's RCX511N25 is a N-CHANNEL FET with 250V DS breakdown voltage and 51A max drain current. Ideal for switching applications, it features a built-in diode, 0.065 ohm max on resistance, and 204A pulsed drain current. Suitable for enhancement mode operation in various electronic devices.
197.9 mJ
250 V
51 A
.065 ohm
204 A
ZDX080N50
ROHM ZDX080N50 is a N-CHANNEL FET with 500V DS breakdown voltage, 8A max drain current, and 0.85 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with 24A pulsed drain current. Package style: flange mount, terminal form: through-hole.
500 V
8 A
.85 ohm
24 A
RSS050P03FU6TB
ROHM's RSS050P03FU6TB is a P-CHANNEL FET with 5A max drain current and 2W power dissipation. Ideal for applications requiring high efficiency in surface mount configurations, such as power management systems. Operating up to 150°C, it offers reliability in various industrial settings.
R6030ENX
ROHM R6030ENX is a N-CHANNEL FET with 600V DS breakdown voltage and 30A max drain current. Ideal for switching applications, it features a built-in diode, 0.13 ohm on-resistance, and 80A pulsed drain current. Suitable for enhancement mode operation in isolated case connections.
636 mJ
600 V
.13 ohm
80 A
RS1E130GNTB
ROHM RS1E130GNTB is a N-CHANNEL FET with 30V DS Breakdown Voltage and 13A ID. Ideal for SWITCHING applications, it features a built-in diode, 0.0152 ohm RDS(on), and 52A IDM. Suitable for surface mount with small outline package style.
30 V
13 A
.0152 ohm
R-PDSO-F5
e3
5
52 A
TIN
BSM120D12P2C005
ROHM BSM120D12P2C005 is a N-CHANNEL FET with 1200V DS breakdown voltage, 240A IDM, and 780W max power dissipation. Ideal for high-power SWITCHING applications due to its SERIES CONNECTED configuration and SILICON CARBIDE technology.
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
1200 V
120 A
R-XUFM-X8
UNSPECIFIED
780 W
240 A
UPPER
SILICON CARBIDE
R6004ENJTL
ROHM R6004ENJTL is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Features include 8A max pulsed drain current, 0.98 ohm max drain-source resistance, and 46mJ avalanche energy rating. Suitable for enhancement mode operation in surface mount configurations.
46 mJ
4 A
.98 ohm
R6020ENZ1C9
ROHM R6020ENZ1C9 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Features include 80A IDM, 0.13 ohm max RDS(on), and 636mJ EAS. Package style: FLANGE MOUNT, technology: MOSFET, material: SILICON.
TO-247
RDD023N50TL
ROHM RDD023N50TL is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for switching applications. It features 8A max pulsed drain current and 5.5 ohm max drain-source resistance. The transistor operates in enhancement mode and has a built-in diode, suitable for surface mount configurations.
21 mJ
2 A
5.5 ohm
R6002ENDTL
ROHM R6002ENDTL is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Features include 4A IDM, 6mJ EAS, and 3.4Ω max RDS(on). Its GULL WING terminals and ENHANCEMENT MODE operation make it suitable for surface mount designs requiring high drain current capabilities.
6 mJ
1.7 A
3.4 ohm
R5007FNX
ROHM R5007FNX is a N-CHANNEL FET with 500V DS breakdown voltage, 28A IDM, and 1.3Ω max RDS(on). Ideal for switching applications, it features a built-in diode and operates in enhancement mode. The transistor's package style is flange mount with isolated case connection.
3.2 mJ
7 A
1.3 ohm
28 A
R6020FNJTL
ROHM R6020FNJTL is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for SWITCHING applications. Features include 80A max pulsed drain current, 0.28 ohm max drain-source resistance, and 26.7mJ avalanche energy rating. Suitable for ENHANCEMENT MODE operation in various electronic devices requiring high power handling capabilities.
26.7 mJ
20 A
.28 ohm
RSY160P05TL
ROHM RSY160P05TL is a P-CHANNEL FET with 45V DS Breakdown Voltage, 16A Drain Current, and 0.05 ohm On Resistance. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a SMALL OUTLINE package.
16 A
.05 ohm
R-PDSO-F3
32 A
RZQ050P01TR
ROHM RZQ050P01TR is a P-CHANNEL FET with 12V DS Breakdown Voltage, 5A Max ID, and 0.026 ohm RDS(ON). Ideal for SWITCHING applications in ENHANCEMENT MODE, it has 20A IDM and operates up to 150°C. Suitable for surface mount with GULL WING terminals in a SMALL OUTLINE package.
.026 ohm
R-PDSO-G6
RTQ040P02TR
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Maximum Pulsed Drain Current (IDM): 16 A; Package Body Material: PLASTIC/EPOXY;
20 V
2SK3050TL
ROHM 2SK3050TL is a N-CHANNEL FET with 600V DS breakdown voltage and 6A IDM. Ideal for switching applications, it features a built-in diode, 5.5ohm RDS(on), and operates in enhancement mode at up to 150°C.
SP8K2TB
ROHM SP8K2TB is a N-CHANNEL FET with 30V DS breakdown voltage, ideal for SWITCHING applications. Features include 24A IDM, 0.047ohm RDS(on), and 150°C max operating temp. Package: PLASTIC/EPOXY, GULL WING terminals, SMALL OUTLINE style.
.047 ohm
R-PDSO-G8
RSQ045N03TR
ROHM's RSQ045N03TR is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 18A IDM, 4.5A ID, 0.056ohm RDS(on), and 1.25W Power Dissipation in a SMALL OUTLINE package. Operating at up to 150°C, it suits ENHANCEMENT MODE requirements with GULL WING terminals for surface mount assembly.
.056 ohm
18 A
SCT2280KEC
ROHM's SCT2280KEC is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and can handle up to 35A pulsed drain current. With a max power dissipation of 108W and operating temperature of 175°C, it offers reliable performance in various industrial settings.
14 A
.364 ohm
5 pF
175 Cel
108 W
SCT2450KEC
ROHM's SCT2450KEC is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and can handle up to 25A pulsed drain current. With a max power dissipation of 85W and operating temperature of 175°C, it offers reliable performance in various industrial settings.
10 A
.585 ohm
4 pF
85 W
25 A
R6046ANZC8
ROHM R6046ANZC8 is a N-CHANNEL FET with 600V DS breakdown voltage, 115A IDM, and 0.081 ohm max RDS(on). Ideal for switching applications due to its single configuration with built-in diode. Package style is flange mount with isolated case connection.
142 mJ
46 A
.081 ohm
115 A
SCT2160KEC
ROHM's SCT2160KEC is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for SWITCHING applications. It features 55A IDM, 0.208 ohm RDS(on), and 165W power dissipation. The transistor operates in ENHANCEMENT MODE at up to 175°C, making it suitable for high-power circuits.
22 A
.208 ohm
7 pF
165 W
55 A
SCT2080KEC
ROHM's SCT2080KEC is a N-CHANNEL Power FET with 1200V DS Breakdown Voltage. Ideal for SWITCHING applications, it has a max Drain Current of 40A and On Resistance of 0.117 ohm. Operating in ENHANCEMENT MODE, it can handle up to 80A Pulsed Drain Current and dissipate 262W power at max.
40 A
.117 ohm
16 pF
262 W
R6004KNX
ROHM R6004KNX is a N-CHANNEL FET with 600V DS breakdown voltage, 4A max drain current, and 0.98 ohm on-resistance. Ideal for switching applications, it features a single configuration with built-in diode and operates in enhancement mode. Package style is flange mount with through-hole terminals.
R6009KNJTL
ROHM R6009KNJTL is a N-CHANNEL FET with 600V DS breakdown voltage, 27A IDM, and 0.535 ohm max RDS(on). Ideal for switching applications, it features a built-in diode and operates in enhancement mode. Package style is small outline with gull wing terminals.
153 mJ
9 A
.535 ohm
TO-263AB
27 A
R6024KNJTL
ROHM R6024KNJTL is a N-CHANNEL FET with 600V DS Breakdown Voltage, 72A IDM, and 0.165 ohm Max RDS(on). Ideal for SWITCHING applications in ENHANCEMENT MODE. Features GULL WING terminals, METAL-OXIDE SEMICONDUCTOR tech, and 497mJ EAS rating.
497 mJ
.165 ohm
72 A
R6030KNX
ROHM's R6030KNX is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Featuring single configuration with built-in diode, it offers 30A max drain current and 0.13 ohm on-resistance. The transistor operates in enhancement mode and has an 80A pulsed drain current rating.
SCT2120AFC
ROHM's SCT2120AFC is a N-CHANNEL FET with 650V DS breakdown voltage and 72A IDM. Ideal for switching applications, it features 0.156 ohm max RDS(on) and SILICON CARBIDE element material. The transistor operates in enhancement mode with single configuration and built-in diode.
650 V
29 A
.156 ohm
BSM300D12P2E001
ROHM BSM300D12P2E001 is a N-CHANNEL FET with 1200V DS Breakdown Voltage, 600A IDM, and 300A ID. It features SERIES CONNECTED configuration for SWITCHING applications. The transistor has 2 elements with built-in diode and thermistor in a RECTANGULAR package style.
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
300 A
R-XUFM-X11
11
600 A
BSM080D12P2C008
ROHM BSM080D12P2C008 is a N-CHANNEL FET with 1200V DS Breakdown Voltage, 160A IDM, and 80A ID. It's used for SWITCHING applications due to its SERIES CONNECTED, CENTER TAP design with SILICON CARBIDE technology.
160 A
HP8S36TB
ROHM HP8S36TB is a N-CHANNEL FET with 2 elements, built-in diode, and 30V DS breakdown voltage. Ideal for switching applications, it has a max pulsed drain current of 48A and 0.0133 ohm RDS(on). With a small outline package style, it operates in enhancement mode at peak reflow temp of 260°C.
5.3 mJ
DRAIN SOURCE
.0133 ohm
48 A
SCT3030KLGC11
ROHM's SCT3030KLGC11 is a N-CHANNEL FET with 1200V DS breakdown voltage and 180A IDM. Ideal for switching applications, it features 0.039 ohm max drain-source resistance and silicon carbide element material. The transistor operates in enhancement mode with a max drain current of 72A.
.039 ohm
265
SCT3040KLGC11
ROHM's SCT3040KLGC11 is a N-CHANNEL Power FET with 1200V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a max IDM of 137A and ID of 55A. With 0.052 ohm RDS(on), this SILICON CARBIDE MOSFET operates in ENHANCEMENT MODE for high-power efficiency.
.052 ohm
137 A
SCT3060ALGC11
ROHM's SCT3060ALGC11 is a N-CHANNEL FET with 650V DS breakdown voltage and 97A IDM. Ideal for switching applications, it features 0.078 ohm max RDS(on) and SILICON CARBIDE technology. Package style: FLANGE MOUNT, terminal finish: TIN, operating mode: ENHANCEMENT MODE.
39 A
.078 ohm
97 A
BSM180D12P2E002
Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
RSS070P05FRATB
ROHM's RSS070P05FRATB is a P-CHANNEL FET with 45V DS Breakdown Voltage and 28A IDM. Ideal for SWITCHING applications, it features 0.039 ohm Drain-Source On Resistance and AEC-Q101 compliance. GULL WING terminals in an 8-terminal SMALL OUTLINE package ensure reliable performance in ENHANCEMENT MODE operation.
AEC-Q101
RJ1G08CGNTLL
ROHM RJ1G08CGNTLL is a N-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features 160A IDM, 0.0056 ohm RDS(on), and 35mJ EAS rating. The transistor is in ENHANCEMENT MODE, has GULL WING terminals, and comes in a SMALL OUTLINE package style.
35 mJ
40 V
.0056 ohm
© 2023 All rights reserved
