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RSD175N10TL

ROHM

RSD175N10TL by ROHM

ROHM RSD175N10TL is a N-CHANNEL FET with 100V DS Breakdown Voltage, 0.119 ohm RDS(ON), and 35A IDM. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a SMALL OUTLINE package.

Median Price

$0.750

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

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Chip1Stop

Japan . 6,362 parts In-Stock

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Verical

USA . 239 parts In-Stock

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$0.750

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Vyrian

USA . 8,867 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 2,500 parts In-Stock

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Nova Conductors

Japan . 700 parts In-Stock

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Ampacity Inc.

Singapore . 404 parts In-Stock

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$0.494

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404

$0.494

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CoreStaff

Japan . 239 parts In-Stock

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$1.080

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$0.459

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$0.411

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Advanced Electronics

New Zealand . 270 parts In-Stock

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$1.206

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$1.097

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$0.989

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270

$1.206

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AZTECH Wire

Italy . 693 parts In-Stock

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$19.260

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Kepictronics

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Aranea Global

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Overview

Unlock the power of innovation with the RSD175N10TL by ROHM. As a leading manufacturer in the industry, ROHM delivers top-quality Power Field Effect Transistors (FET) that are versatile and reliable for various applications. With its N-CHANNEL configuration and built-in diode, this transistor is perfect for switching operations. The RSD175N10TL offers customers unmatched value with a high DS Breakdown Voltage of 100V and a maximum Drain Current of 17.5A. Experience enhanced performance and efficiency with ROHM's cutting-edge technology, making this product a must-have for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection, making the product suitable for various environments.

Polarity or Channel Type: N-CHANNEL

Allows for efficient current flow in the specified direction, enhancing the transistor's performance.

Transistor Application: SWITCHING

Designed for switching applications, ensuring reliability and efficiency in controlled power output.

Minimum DS Breakdown Voltage: 100 V

Can handle high voltage levels without breakdown, ensuring safe operation.

Surface Mount: YES

Enables easy installation and saves space on the circuit board.

Maximum Pulsed Drain Current (IDM): 35 A

Can handle high current loads during short pulses, suitable for demanding applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers high efficiency and fast switching speeds for optimal performance.

Maximum Drain-Source On Resistance: 0.119 ohm

Low on-resistance minimizes power loss and improves efficiency.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during assembly processes, ensuring reliability.

Technical Specifications

Power Field Effect Transistors (FET) RSD175N10TL attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from ROHM

Specs

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (ID):

17.5 A

Maximum Drain-Source On Resistance:

.119 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e2

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

35 A

Surface Mount:

YES

Terminal Finish:

TIN COPPER

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

RSD175N10TL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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