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RSD150N06TL

ROHM

RSD150N06TL by ROHM

ROHM RSD150N06TL is a N-CHANNEL FET with 60V DS breakdown voltage, 15A max drain current, and 0.051 ohm on-resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 20W.

Median Price

$0.659

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Chip1Stop

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$0.391

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$0.371

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Verical

USA . 2,500 parts In-Stock

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$0.659

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$0.640

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$0.659

$0.640

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UK . 1,450 parts In-Stock

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$0.768

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$0.603

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1,450

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Vyrian

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Ampacity Inc.

Singapore . 1,218 parts In-Stock

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$0.493

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Advanced Electronics

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$0.566

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$0.515

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$0.464

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CoreStaff

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$0.914

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$0.397

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$0.350

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Microchip USA

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AZTECH Wire

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Overview

ROHM's RSD150N06TL Power Field Effect Transistor offers unmatched quality and reliability for switching applications. With a maximum drain current of 15 A and low on-resistance, this N-channel transistor provides efficient performance in a compact package. Ideal for use in various electronic devices, this transistor is designed for enhancement mode operation, ensuring optimal functionality. Trust ROHM to deliver cutting-edge technology and superior products that meet your power management needs with ease.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for applications where weight and robustness are important factors.

Polarity or Channel Type: N-CHANNEL

N-CHANNEL FETs are commonly used for high power applications as they offer lower on-state resistance and higher current-carrying capability compared to P-CHANNEL FETs.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode helps protect the circuit from voltage spikes and reverse polarity, increasing the reliability of the system.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET offers fast switching speeds and low on-state resistance, making it efficient for power management.

Surface Mount: YES

Surface mount capability allows for easy and compact integration onto PCBs, saving space and enabling high-density designs.

Minimum DS Breakdown Voltage: 60 V

The high breakdown voltage of 60V makes this FET suitable for high voltage applications, providing a safe operating margin.

Maximum Drain Current (ID): 15 A

With a high maximum drain current of 15A, this FET can handle heavy loads and high power requirements without overheating or failing.

Maximum Power Dissipation (Abs): 20 W

The high power dissipation capability of 20W ensures the FET can handle high power levels and operate reliably under demanding conditions.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology offers high efficiency, low gate drive power, and fast switching speeds, making it a popular choice for power electronics applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this FET can withstand high temperature environments, ensuring reliable performance in harsh conditions.

Technical Specifications

Power Field Effect Transistors (FET) RSD150N06TL attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from ROHM

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

15 A

Maximum Drain Current (ID):

15 A

Maximum Drain-Source On Resistance:

.051 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e2

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

30 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN COPPER

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

RSD150N06TL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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