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RSY160P05TL

ROHM

RSY160P05TL by ROHM

ROHM RSY160P05TL is a P-CHANNEL FET with 45V DS Breakdown Voltage, 16A Drain Current, and 0.05 ohm On Resistance. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a SMALL OUTLINE package.

Median Price

$2.270

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 11 parts In-Stock

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$2.270

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$0.625

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Vyrian

USA . 2,532 parts In-Stock

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Nova Conductors

Japan . 46 parts In-Stock

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Ampacity Inc.

Singapore . 11 parts In-Stock

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$1.930

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Aranea Global

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Kepictronics

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Overview

Unlock the power of innovation with the RSY160P05TL by ROHM, a top-quality P-Channel Power Field Effect Transistor. Designed for switching applications, this single transistor boasts a built-in diode for enhanced performance. With a maximum drain current of 16A and a low on-resistance of just 0.05 ohms, this component delivers reliable power management in a compact package. Trust ROHM's expertise in semiconductor technology to bring you cutting-edge solutions for your electronic projects. Elevate your designs with the RSY160P05TL and experience superior performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and cost-effective, making the product suitable for a variety of applications.

Polarity or Channel Type: P-CHANNEL

P-channel FETs are known for their lower ON-state resistance, making them efficient for various switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and saves space, making the product more versatile.

Transistor Application: SWITCHING

Designed specifically for switching operations, ensuring reliable performance in such applications.

Surface Mount: YES

Easily mountable on PCBs, simplifying the assembly process and saving time.

Minimum DS Breakdown Voltage: 45 V

With a high breakdown voltage, this FET can handle higher voltages without breakdown, ensuring reliability.

Maximum Pulsed Drain Current (IDM): 32 A

Capable of handling high pulsed currents, making it suitable for applications that require peak current handling.

Maximum Drain Current (Abs) (ID): 16 A

Sufficient drain current capacity for various applications, ensuring proper operation under load.

Maximum Power Dissipation (Abs): 20 W

With a high power dissipation capability, this FET can handle higher power levels without overheating.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Known for its low gate-to-source threshold voltage and high input impedance, making it efficient for switching applications.

Maximum Drain-Source On Resistance: 0.05 ohm

Low ON resistance leads to lower power dissipation and improved efficiency in switching operations.

Terminal Position: DUAL

The dual terminal position allows for flexibility in circuit design and layout, accommodating various configurations.

Technical Specifications

Power Field Effect Transistors (FET) RSY160P05TL attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from ROHM

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

45 V

Maximum Drain Current (Abs) (ID):

16 A

Maximum Drain Current (ID):

16 A

Maximum Drain-Source On Resistance:

.05 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

32 A

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

RSY160P05TL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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