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HP8S36TB

ROHM

HP8S36TB by ROHM

ROHM HP8S36TB is a N-CHANNEL FET with 2 elements, built-in diode, and 30V DS breakdown voltage. Ideal for switching applications, it has a max pulsed drain current of 48A and 0.0133 ohm RDS(on). With a small outline package style, it operates in enhancement mode at peak reflow temp of 260°C.

Median Price

$2.166

Lifecycle Status

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4

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1k+

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Verical

USA . 4,975 parts In-Stock

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$2.166

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Vyrian

USA . 2,515 parts In-Stock

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Nova Conductors

Japan . 650 parts In-Stock

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650

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Semtec, LLC

USA . 32 parts In-Stock

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Ampacity Inc.

Singapore . 4,515 parts In-Stock

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$0.530

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$0.530

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CoreStaff

Japan . 5,000 parts In-Stock

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$1.148

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$0.484

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$0.436

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$1.148

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Microchip USA

USA . 7,915 parts In-Stock

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$4.615

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AZTECH Wire

Italy . 1,122 parts In-Stock

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$8.210

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Kepictronics

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Aranea Global

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Overview

Experience the cutting-edge technology and superior quality of the HP8S36TB by ROHM, a leading manufacturer in the industry. This N-channel power FET is perfect for switching applications, offering unparalleled performance and reliability. With its series connected, center tap configuration and built-in diode, this transistor provides efficient power management. Say goodbye to overheating with a maximum pulsed drain current of 48 A and a low drain-source on resistance of 0.0133 ohm. Trust ROHM to deliver high-quality components that exceed expectations. Upgrade your devices with the HP8S36TB and enjoy seamless operation and enhanced power efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making the product reliable for long-term use.

Polarity or Channel Type: N-CHANNEL

Efficiently controls the flow of current, making it suitable for various applications.

Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Allows for versatile connection options and helps in efficient energy transfer within the circuit.

Transistor Application: SWITCHING

Ideal for fast switching applications, ensuring quick response times.

Surface Mount: YES

Facilitates easy and convenient installation on circuit boards.

Minimum DS Breakdown Voltage: 30 V

Withstands higher voltages, providing a safety margin for the circuit.

Package Shape: RECTANGULAR

Space-efficient design for better utilization of circuit board space.

Maximum Pulsed Drain Current (IDM): 48 A

High current handling capacity suitable for demanding applications.

Avalanche Energy Rating (EAS): 5.3 mJ

Can handle energy spikes efficiently, ensuring stability during transient events.

Maximum Drain Current (ID): 12 A

Sufficient current handling capacity for a wide range of applications.

Maximum Drain-Source On Resistance: 0.0133 ohm

Low on-resistance for minimal power loss and efficient operation.

Technical Specifications

Power Field Effect Transistors (FET) HP8S36TB attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from ROHM

Specs

Avalanche Energy Rating (EAS):

5.3 mJ

Case Connection:

DRAIN SOURCE

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

12 A

Maximum Drain-Source On Resistance:

.0133 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

48 A

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

HP8S36TB Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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