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RSS070P05FRATB

ROHM

RSS070P05FRATB by ROHM

ROHM's RSS070P05FRATB is a P-CHANNEL FET with 45V DS Breakdown Voltage and 28A IDM. Ideal for SWITCHING applications, it features 0.039 ohm Drain-Source On Resistance and AEC-Q101 compliance. GULL WING terminals in an 8-terminal SMALL OUTLINE package ensure reliable performance in ENHANCEMENT MODE operation.

Median Price

$1.925

Lifecycle Status

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3

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1k+

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Farnell

UK . 2,488 parts In-Stock

1+ parts

$1.630

100+ parts

$1.110

1k+ parts

$0.750

10k+ parts

$0.735

2,488

$1.630

$1.110

$0.750

$0.735

Newark

USA . 2,488 parts In-Stock

1+ parts

$2.220

100+ parts

$1.510

1k+ parts

$1.090

10k+ parts

-

2,488

$2.220

$1.510

$1.090

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Nova Conductors

Japan . 500 parts In-Stock

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500

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Microchip USA

USA . 364 parts In-Stock

1+ parts

$8.025

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-

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364

$8.025

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AZTECH Wire

Italy . 901 parts In-Stock

1+ parts

$8.670

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901

$8.670

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Ampacity Inc.

Singapore . 375 parts In-Stock

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$11.050

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375

$11.050

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QUARKTWIN TECHNOLOGY LTD

USA . 23,207 parts In-Stock

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23,207

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Aranea Global

USA . 1,000 parts In-Stock

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Overview

Experience the next level of power efficiency and reliability with the RSS070P05FRATB by ROHM. As a trusted manufacturer in the industry, ROHM delivers top-quality Power Field Effect Transistors (FET) that are ideal for various switching applications. With a minimum DS Breakdown Voltage of 45V and a maximum Pulsed Drain Current of 28A, this P-CHANNEL transistor offers exceptional performance and durability. Its SINGLE configuration with a built-in diode ensures seamless operation, while its compact design and surface mount capability make it easy to integrate into your projects. Trust ROHM to provide you with cutting-edge technology that brings value, benefits, and advantages to your applications.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Polarity or Channel Type: P-CHANNEL

P-channel FETs typically have higher mobility and lower resistance compared to N-channel FETs, making them suitable for high-efficiency applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for protection against reverse voltage spikes, enhancing the reliability of the FET in various switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET offers fast switching speeds and low power dissipation, making it ideal for efficient power management.

Surface Mount: YES

Surface-mount FETs are compact, easy to install, and suitable for automated assembly processes, making them convenient for use in various electronic devices.

Minimum DS Breakdown Voltage: 45 V

With a minimum breakdown voltage of 45V, this FET can handle high voltage levels, providing reliable operation in demanding conditions.

Package Shape: RECTANGULAR

The rectangular package shape offers a compact design, saving space on the circuit board and allowing for efficient placement in tight spaces.

Maximum Pulsed Drain Current (IDM): 28 A

The high pulsed drain current rating of 28A enables the FET to handle sudden spikes in current, ensuring reliable performance in transient conditions.

No. of Terminals: 8

With 8 terminals, this FET provides multiple connection points for enhanced flexibility in circuit design and compatibility with various applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style offers a space-saving design, making it suitable for compact electronic devices and applications with limited board space.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers reliable performance, low power consumption, and high efficiency, making it a popular choice for power FETs.

Transistor Element Material: SILICON

Silicon is a commonly used material for FETs due to its high thermal conductivity, compatibility with integrated circuits, and robust performance in various operating conditions.

Maximum Drain Current (ID): 7 A

With a maximum drain current of 7A, this FET can handle moderate power levels, making it suitable for a wide range of power management applications.

Maximum Drain-Source On Resistance: 0.039 ohm

The low drain-source on resistance of 0.039 ohm minimizes power loss and heat dissipation, improving the efficiency and performance of the FET in power applications.

Terminal Position: DUAL

The dual terminal position provides multiple connection options for flexible circuit design and compatibility with different layouts, enhancing the versatility of the FET.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard ensures the FET meets automotive-grade requirements for reliability, quality, and performance, making it suitable for automotive applications.

Technical Specifications

Power Field Effect Transistors (FET) RSS070P05FRATB attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from ROHM

Specs

Minimum DS Breakdown Voltage:

45 V

Maximum Drain Current (ID):

7 A

Maximum Drain-Source On Resistance:

.039 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

28 A

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

RSS070P05FRATB Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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