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RSS095N05HZGTB

ROHM

RSS095N05HZGTB by ROHM

ROHM's RSS095N05HZGTB is a N-CHANNEL FET with 45V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 38A IDM, 0.021 ohm RDS(on), and 210pF Crss. Suitable for high-power circuits in automotive electronics due to AEC-Q101 certification.

Median Price

$2.845

Lifecycle Status

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9

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1k+

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Farnell

UK . 199 parts In-Stock

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$1.990

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$0.966

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Chip1Stop

Japan . 354 parts In-Stock

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$2.800

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$1.220

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$0.913

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$0.811

354

$2.800

$1.220

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$0.811

Newark

USA . 199 parts In-Stock

1+ parts

$2.890

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$1.300

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$0.988

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$2.890

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Mouser Electronics

USA . 4,031 parts In-Stock

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$3.010

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$1.340

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$1.030

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$0.972

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$3.010

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$0.972

Element14

Singapore . 199 parts In-Stock

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$3.350

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$1.800

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$1.310

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$1.250

199

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Verical

USA . 2,474 parts In-Stock

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$1.907

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DigiKey

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ACDS - Activité Composants Distribution Service

France . 2,476 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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Ampacity Inc.

Singapore . 1,100 parts In-Stock

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$1.100

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CoreStaff

Japan . 2,476 parts In-Stock

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$1.884

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$0.753

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$0.678

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$1.884

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Continental Prestige Electronics

USA . 200 parts In-Stock

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$2.660

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$1.640

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$1.380

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$2.660

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Microchip USA

USA . 6,596 parts In-Stock

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$7.730

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Aranea Global

USA . 1,000 parts In-Stock

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Argo Parts USA

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Overview

Unleash the power of innovation with the ROHM RSS095N05HZGTB Power Field Effect Transistor. Manufactured by industry leader ROHM, this N-CHANNEL FET offers unparalleled quality and reliability for a variety of switching applications. With a high DS breakdown voltage of 45V and maximum pulsing drain current of 38A, this single transistor with built-in diode ensures optimal performance and efficiency. Experience the benefits of enhanced mode operation and low on-resistance of 0.021 ohm, providing customers with superior value and functionality. Elevate your designs with the cutting-edge technology of the RSS095N05HZGTB from ROHM today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, ideal for use in various applications.

Polarity or Channel Type: N-CHANNEL

Efficient for applications requiring N-channel technology.

Minimum DS Breakdown Voltage: 45 V

Can handle high voltages, providing reliability and safety in operation.

Configuration: SINGLE WITH BUILT-IN DIODE

Includes a built-in diode for protection and efficiency in circuit design.

Maximum Pulsed Drain Current (IDM): 38 A

Capable of handling high peak currents for robust performance.

Maximum Power Dissipation (Abs): 2 W

Efficient power handling capability for reliable operation under load.

Maximum Drain-Source On Resistance: 0.021 ohm

Low on-resistance ensures minimal power loss and improved efficiency.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Advanced technology for high performance and reliability in switching applications.

Technical Specifications

Power Field Effect Transistors (FET) RSS095N05HZGTB attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from ROHM

Specs

Minimum DS Breakdown Voltage:

45 V

Maximum Drain Current (Abs) (ID):

9.5 A

Maximum Drain Current (ID):

9.5 A

Maximum Drain-Source On Resistance:

.021 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

210 pF

JESD-30 Code:

R-PDSO-G8

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

2 W

Maximum Pulsed Drain Current (IDM):

38 A

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

RSS095N05HZGTB Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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