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RSS095N05FRATB

ROHM

RSS095N05FRATB by ROHM

ROHM's RSS095N05FRATB is a N-CHANNEL FET with 45V DS Breakdown Voltage and 9.5A Drain Current. Ideal for SWITCHING applications, it features a built-in diode, GULL WING terminals, and operates in ENHANCEMENT MODE. With a max power dissipation of 2W and peak reflow temperature of 260°C, it meets AEC-Q101 standards.

Median Price

$2.810

Lifecycle Status

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3

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,137 parts In-Stock

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$2.810

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$1.260

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$1.030

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2,137

$2.810

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DigiKey

USA . 1,758 parts In-Stock

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$2.810

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$1.252

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$1.033

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1,758

$2.810

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Nova Conductors

Japan . 870 parts In-Stock

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870

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Ampacity Inc.

Singapore . 1,538 parts In-Stock

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$0.720

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1,538

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Microchip USA

USA . 4,054 parts In-Stock

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$6.542

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Argo Parts USA

USA . 4,979 parts In-Stock

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Continental Prestige Electronics

USA . 744 parts In-Stock

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Aranea Global

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Overview

Unleash the power of innovation with the ROHM RSS095N05FRATB Power Field Effect Transistor. Manufactured by a trusted industry leader, this N-CHANNEL transistor is designed for switching applications, offering unparalleled performance and reliability. With a maximum drain-source on resistance of 0.021 ohm and a maximum operating temperature of 150°C, this transistor provides exceptional value and efficiency. Whether you're in automotive, industrial, or consumer electronics, the ROHM RSS095N05FRATB is the perfect solution for your power management needs. Experience the difference with ROHM technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the FET, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs generally have lower on-resistance than P-channel FETs, making them more efficient for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode helps to protect the circuit from voltage spikes and reverse current flows, enhancing the reliability of the FET.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET offers fast switching speeds and efficient performance.

Surface Mount: YES

The surface mount capability makes it easy to integrate this FET into circuit boards, saving space and simplifying assembly.

Maximum Drain Current (ID): 9.5 A

With a high maximum drain current, this FET can handle higher loads and power requirements in various applications.

Maximum Power Dissipation (Abs): 2 W

The high power dissipation capability ensures that the FET can operate effectively without overheating, increasing its reliability.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this FET can withstand elevated temperatures without degradation, suitable for harsh environments.

Technical Specifications

Power Field Effect Transistors (FET) RSS095N05FRATB attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from ROHM

Specs

Minimum DS Breakdown Voltage:

45 V

Maximum Drain Current (Abs) (ID):

9.5 A

Maximum Drain Current (ID):

9.5 A

Maximum Drain-Source On Resistance:

.021 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

210 pF

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e2

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

2 W

Maximum Pulsed Drain Current (IDM):

38 A

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

TIN COPPER

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

RSS095N05FRATB Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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