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RDX045N60FU6

ROHM

RDX045N60FU6 by ROHM

ROHM's RDX045N60FU6 is a single N-channel power FET with 4.5A max drain current and 35W max power dissipation. Ideal for enhancement mode operation in applications requiring high efficiency and reliability at up to 150°C operating temperature.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,297 parts In-Stock

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3,297

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Nova Conductors

Japan . 650 parts In-Stock

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650

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Distributors (Availability)

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AZTECH Wire

Italy . 481 parts In-Stock

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$8.561

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481

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Ampacity Inc.

Singapore . 558 parts In-Stock

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$25.050

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558

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Aranea Global

USA . 50 parts In-Stock

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Overview

Unleash the power of innovation with the RDX045N60FU6 by ROHM. As a leading manufacturer in the industry, ROHM delivers unparalleled quality and reliability in their Power Field Effect Transistors. Ideal for a wide range of applications, this N-CHANNEL transistor offers enhanced performance and efficiency. Elevate your projects with the superior value, benefits, and advantages that only ROHM can provide. Trust in ROHM to bring your designs to life with cutting-edge technology and exceptional craftsmanship.

Feature Benefit Bullets

Polarity or Channel Type:

N-CHANNEL - This allows for efficient control of current flow in the circuit, making it suitable for various applications.

Configuration:

SINGLE - The single configuration simplifies the circuit design and installation process, making it user-friendly.

Operating Mode:

ENHANCEMENT MODE - This mode ensures enhanced performance and efficiency in operation, making it a reliable choice for high-demand applications.

Maximum Drain Current (Abs) (ID):

4.5 A - The high maximum drain current capacity allows for the handling of heavy loads without the risk of damage, making it versatile for different tasks.

Maximum Power Dissipation (Abs):

35 W - The high power dissipation capability ensures stable performance and longevity under heavy usage, making it a durable choice.

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR - This advanced technology offers improved efficiency and reliability in operation, making it a superior option compared to other transistor technologies.

Maximum Operating Temperature:

150 °C - The high maximum operating temperature allows for operation in harsh environments without compromising performance, making it suitable for a wide range of applications.

Maximum Drain Current (ID):

4.5 A - The maximum drain current capacity of 4.5 A ensures reliable and consistent performance even under heavy loads, making it a dependable choice for demanding tasks.

Technical Specifications

Power Field Effect Transistors (FET) RDX045N60FU6 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from ROHM

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

4.5 A

Maximum Drain Current (ID):

4.5 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Trade Compliance

RDX045N60FU6 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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